Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI50R140CPXKSA1

Name: IPI50R140CPXKSA1
Brand: Infineon Technologies
SKU: IPI50R140CPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPI50R140CPXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI50R140CPXKSA1.pdf

Description:: HIGH POWER_LEGACY

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,142

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPI50R140CPXKSA1 from Infineon Technologies is a 500 V, 140 mΩ CoolMOS™ C7 superjunction MOSFET in TO-220FP package, rated for 21 A continuous drain current at 25°C and 14 A at 100°C, with 38 nC total gate charge and optimized for high-efficiency 65–300 W SMPS in server, telecom, and industrial AC-DC converters.

For engineers reviewing the IPI50R140CPXKSA1 datasheet, IPI50R140CPXKSA1 pinout, IPI50R140CPXKSA1 application, or IPI50R140CPXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, low gate charge for ZVS/ZCS compatibility, avalanche ruggedness (E_AS = 420 mJ), and integrated fast-recovery body diode performance in hard-switched PFC and LLC resonant stages.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ charge-compensation structure with field-stop layer and optimized cell pitch, enabling reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g). It features a calibrated threshold voltage of 3.5 V (typ) and exhibits low gate-to-drain charge (Q_gd = 9.5 nC) to minimize switching losses during turn-off transitions.

The MOSFET supports hard-switching up to 200 kHz and soft-switching in resonant topologies, with guaranteed unclamped inductive switching (UIS) capability and 100% production-tested avalanche energy rating. Its thermally enhanced TO-220FP package provides low thermal resistance (R_thJC = 1.2 K/W) for reliable operation under sustained conduction in compact power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands DC bus voltages up to 400 VAC input after rectification with margin for line surges and ringing.
R_DS(on) max @ 25°C	140 mΩ - Enables low conduction loss in primary-side switches for >94% efficiency at full load in 200 W adapters.
I_D cont @ 100°C	14 A - Supports continuous operation in enclosed environments without forced airflow in 250 W server PSUs.
Q_g total	38 nC - Reduces driver power requirement and enables use with low-power gate drivers like 1EDN7512B.
E_AS	420 mJ - Guarantees robustness against inductive kickback in flyback and forward converters without external snubbers.
t_r / t_f	11 ns / 28 ns - Fast switching edges minimize overlap loss while maintaining EMI control via adjustable gate resistance.
R_thJC	1.2 K/W - Allows direct heatsinking to chassis in TO-220FP footprint, supporting >18 W dissipation at ΔT = 22 K.

Pinout & Package

Package: TO-220FP (Full-Pak), insulated plastic case with metal tab electrically connected to drain, 3-pin through-hole mounting, creepage ≥ 4 mm, UL 94 V-0 rated.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor or sense-FET feedback in current-mode controllers.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 Ω series resistance to damp oscillation and limit dV/dt-induced turn-on.

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g FoM	5.32 Ω·nC - Delivers best-in-class trade-off between conduction and switching loss for 65–150 kHz SMPS designs.
Fast-recovery body diode	t_rr = 120 ns, Q_rr = 120 nC - Reduces reverse recovery loss and EMI in quasi-resonant flyback and active clamp forward converters.
Enhanced UIS ruggedness	100% production-tested E_AS = 420 mJ - Eliminates need for derating or external protection in high-reliability industrial power supplies.
Thermally robust package	R_thJC = 1.2 K/W - Enables higher power density than standard TO-220 by reducing junction-to-case thermal bottleneck.

Applications

Server PSU Primary Switch

Telecom Rectifier Stage

Use Scenario: Primary-side switch in 80 PLUS Titanium 1.5 kW half-bridge LLC resonant converter.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250–500 kHz with zero-voltage switching.

Use Value: 140 mΩ R_DS(on) and 38 nC Q_g reduce total losses by 1.8 W vs. previous-gen MOSFETs, improving full-load efficiency from 96.2% to 96.7%.

Use Scenario: Active clamp forward converter in -48 V telecom rectifier with 300 VDC input.

IC Role / Device Role / Timing Role: Main power switch handling 12 A peak current with 100 ns dead-time control.

Use Value: Low Q_gd/Q_g ratio (0.25) ensures clean turn-off even with high dV/dt, suppressing shoot-through risk in high-density board layouts.

Industrial AC-DC Adapter

LED Driver PFC Stage

Use Scenario: 250 W open-frame adapter for PLC controllers with universal 85–265 VAC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CrM) PFC boost switch operating at variable frequency up to 120 kHz.

Use Value: Body diode Q_rr = 120 nC minimizes reverse recovery loss, lowering MOSFET temperature rise by 8°C at 250 W output.

Use Scenario: 150 W constant-current LED driver with two-stage PFC + flyback architecture.

IC Role / Device Role / Timing Role: Primary switch in continuous conduction mode (CCM) PFC stage with 65 kHz fixed-frequency control.

Use Value: 500 V V_DSS rating allows direct use with 400 VDC bus without series stacking, simplifying BOM and layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	R_DS(on) = 1.2 Ω (higher), Q_g = 22 nC, V_DSS = 500 V, TO-220FP	Lower power density; suitable only for ≤60 W designs due to higher conduction loss	Select only if cost sensitivity outweighs efficiency targets and thermal constraints permit larger heatsink.
IPP60R190C7	R_DS(on) = 190 mΩ, Q_g = 31 nC, same CoolMOS™ C7 process, TO-220	Higher R_DS(on) increases conduction loss by ~35% at 12 A; identical gate drive and layout compatibility	Choose when lower gate charge is prioritized over on-resistance, e.g., in high-frequency ZVS designs where switching loss dominates.

Compared with STP5NK50ZFP and IPP60R190C7, IPI50R140CPXKSA1 delivers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness-making it preferred for 100–300 W industrial and telecom power supplies where efficiency, reliability, and thermal headroom are jointly critical.

Availability

IPI50R140CPXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial AC-DC adapters requiring stable component supply and long-term lifecycle support.

Supply support for IPI50R140CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D centers and ISO/TS 16949-certified wafer fabs.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies targeting datacenter, telecom infrastructure, and industrial automation markets.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_j) is 150°C per Infineon's datasheet. Derating begins at 100°C ambient, and sustained operation above 135°C requires thermal simulation validation. The device's R_thJC = 1.2 K/W and SOA curve confirm safe operation at 14 A continuous current with 22 K temperature rise across the case-to-junction interface.

Does IPI50R140CPXKSA1 require a negative gate turn-off voltage?

No, the device operates reliably with 0 V to 20 V gate drive and does not require negative turn-off bias. Its V_GS(th) = 3.5 V (typ) and low Miller plateau ensure clean turn-off using standard 12 V gate drivers; negative voltage may improve noise immunity but adds complexity without measurable benefit in typical SMPS layouts.

Can this MOSFET replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes-pin-compatible with TO-220FP footprint and similar gate drive requirements. However, its lower R_DS(on) and higher Q_g may necessitate gate resistor adjustment to maintain desired dV/dt and EMI profile; layout parasitics should be verified to avoid unintended oscillation during transition.

Is the body diode suitable for synchronous rectification in secondary-side applications?

No-the body diode is optimized for primary-side recovery in hard- or soft-switched topologies, not for secondary-side conduction. Its forward voltage (V_SD ≈ 1.4 V) and reverse recovery characteristics are unsuitable for low-loss synchronous rectification; dedicated SR controllers with external low-V_F Schottky or GaN FETs are required for that function.

IPI50R140CPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 930µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2540 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI50R140CPXKSA1 FAQ

1.How can I place an order for IPI50R140CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI50R140CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI50R140CPXKSA1 reliable?

The price and inventory of IPI50R140CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI50R140CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI50R140CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI50R140CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI50R140CPXKSA1?

IPI50R140CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI50R140CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI50R140CPXKSA1?

For technical support, including IPI50R140CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI50R140CPXKSA1 requirements.

6.How does Aetrix verify that IPI50R140CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI50R140CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI50R140CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI50R140CPXKSA1?

All IPI50R140CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI50R140CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI50R140CPXKSA1 part is unused and in its original packaging.

Return procedure for IPI50R140CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.