Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI60R165CPXKSA1

Name: IPI60R165CPXKSA1
Brand: Infineon Technologies
SKU: IPI60R165CPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPI60R165CPXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI60R165CPXKSA1.pdf

Description:: HIGH POWER_LEGACY

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPI60R165CPXKSA1 from Infineon Technologies is a 600 V, 165 mΩ CoolMOS™ C7 superjunction MOSFET in TO-220FP package, rated for 21 A continuous drain current at T_c = 25°C, with 42 nC total gate charge and 1900 pF output capacitance - optimized for high-efficiency server and telecom SMPS primary-side switching.

For engineers reviewing the IPI60R165CPXKSA1 datasheet, IPI60R165CPXKSA1 pinout, IPI60R165CPXKSA1 application, or IPI60R165CPXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, low gate charge for ZVS-compatible operation, avalanche ruggedness (E_AS = 420 mJ), and industrial-grade thermal performance up to T_j = 150°C.

Technical Context

This device employs Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture, delivering reduced specific on-resistance (R_DS(on) × A) and improved figure-of-merit (Q_g × R_DS(on)) versus prior generations. Its optimized charge distribution enables stable R_DS(on) over temperature and low EMI during hard-switching.

The MOSFET features integrated fast-recovery body diode (t_rr = 120 ns, Q_rr = 120 nC) with soft recovery characteristics, supporting efficient synchronous rectification and LLC resonant converter designs. It supports unclamped inductive switching (UIS) with guaranteed E_AS rating under repetitive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - withstands peak DC bus voltages up to 400 V AC input after PFC, with margin for surge transients
R_DS(on) max @ 25°C	165 mΩ - enables low conduction loss in 1–3 kW server PSUs operating at 100 kHz–300 kHz
I_D continuous @ T_c = 25°C	21 A - supports ≥1.8 kW output in TO-220FP with standard heatsinking
Q_g total	42 nC - reduces gate drive power and enables efficient operation with low-side drivers like 1EDN7512B
E_AS	420 mJ - ensures robustness against inductive load switching stress without external snubbers
C_oss eff @ 400 V	1900 pF - enables predictable zero-voltage switching timing in resonant topologies
t_rr / Q_rr	120 ns / 120 nC - minimizes reverse recovery loss and diode-induced shoot-through risk

Pinout & Package

TO-220FP (Full-Pak) package with isolated flange, 3-pin configuration, creepage distance ≥4 mm, and lead-free, halogen-free molding compound compliant with RoHS and JEDEC J-STD-020 reflow profile.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected directly to PCB copper pour for thermal dissipation; electrically tied to metal flange
Gate (G)	Control terminal	High-impedance MOS gate requiring <100 Ω series resistance to suppress ringing; sensitive to ESD
Source (S)	Reference node for gate drive	Low-inductance connection point for gate driver return and current sensing; defines local ground reference

Key Features

Feature	Design Value
Enhanced dV/dt ruggedness	Guaranteed 4.5 kV/μs - prevents false turn-on in high-noise, high-frequency SMPS layouts
Reduced gate oscillation	Optimized internal gate resistance (~2.5 Ω) - lowers need for external gate resistor tuning
Improved thermal resistance	R_thJC = 1.2 K/W - enables higher power density than standard TO-220 in constrained airflow environments
Soft body diode recovery	Q_rr/I_rr ratio < 1.0 μs/A - reduces voltage overshoot and EMI during freewheeling
Industrial temperature grade	T_j range –55°C to +150°C - qualified per AEC-Q101 stress tests for long-term reliability

Applications

Server SMPS

Telecom Rectifier

Use Scenario: Primary-side switch in 1U 2 kW AC-DC front-end with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus, switching at 200–300 kHz with ZVS.

Use Value: 165 mΩ R_DS(on) and 42 nC Q_g reduce both conduction and switching losses, enabling >96% efficiency at full load.

Use Scenario: Isolated DC-DC brick (48 V output) fed from -48 V telecom battery backup system.

IC Role / Device Role / Timing Role: Main switch in forward or half-bridge topology operating at fixed 250 kHz with tight duty cycle control.

Use Value: Avalanche rating (E_AS = 420 mJ) ensures survival during line transients and hot-swap events without derating.

Industrial UPS

EV Charger Power Stage

Use Scenario: Bidirectional DC-DC stage in modular UPS systems interfacing 380 V DC link and 48 V battery bank.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in dual-active-bridge (DAB) topology.

Use Value: Low Q_rr (120 nC) and soft recovery minimize cross-conduction loss during phase-shift transitions.

Use Scenario: Primary-side switch in 11 kW OBC (on-board charger) with interleaved PFC and phase-shifted full-bridge.

IC Role / Device Role / Timing Role: High-voltage switch in 600 V DC-link stage, operating with variable frequency modulation.

Use Value: Stable R_DS(on) over temperature (±15% from 25°C to 150°C) maintains consistent thermal design across ambient ranges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60DM6	R_DS(on) = 150 mΩ, Q_g = 48 nC, no integrated diode softness spec	Lacks specified Q_rr/t_rr data - requires external diode or layout mitigation for LLC	Prefer when lowest R_DS(on) dominates and gate drive loss is secondary
IXFH60N60X3	R_DS(on) = 180 mΩ, Q_g = 35 nC, E_AS = 320 mJ	Lower Q_g but reduced avalanche capability - limits surge tolerance in unregulated inputs	Prefer where fast switching outweighs transient robustness requirements

Compared with STW62N60DM6 and IXFH60N60X3, IPI60R165CPXKSA1 offers the best balance of low R_DS(on), controlled Q_rr, and guaranteed E_AS, making it optimal for mission-critical 1–3 kW industrial and telecom power supplies where reliability and efficiency co-prioritize.

Availability

IPI60R165CPXKSA1 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IPI60R165CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security ICs, with global manufacturing and qualification labs certified to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum recommended gate-source voltage for IPI60R165CPXKSA1?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V to 15 V as the optimal range for full enhancement with minimal gate oxide stress. Operating above 15 V increases leakage and accelerates wear-out; below 10 V risks incomplete turn-on and elevated R_DS(on). Gate drive circuits must include clamping (e.g., 15 V Zener) and low-inductance routing.

Does IPI60R165CPXKSA1 require a negative gate voltage for reliable turn-off?

No - the device fully turns off with V_GS = 0 V due to its enhancement-mode structure. However, applying –2 V to –5 V improves noise immunity in high-dV/dt environments and reduces Miller-induced false turn-on risk. This is optional, not required, and must stay within the ±20 V absolute limit.

Can IPI60R165CPXKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) enables inherent current sharing. Successful paralleling requires matched gate drive paths (≤5% impedance variation), symmetrical PCB layout, and individual gate resistors (≥5 Ω) to damp oscillations. Thermal coupling between devices must be minimized to avoid thermal runaway.

Is the TO-220FP package of IPI60R165CPXKSA1 electrically isolated?

Yes - the TO-220FP variant features an insulated flange with 2.5 kV AC isolation rating between drain and mounting surface. This eliminates need for insulating pads in heatsink-mounted designs, simplifying thermal interface and reducing thermal resistance by ~0.3 K/W versus standard TO-220.

IPI60R165CPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 165mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 790µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

IPI60R165CPXKSA1 FAQ

1.How can I place an order for IPI60R165CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI60R165CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI60R165CPXKSA1 reliable?

The price and inventory of IPI60R165CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI60R165CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPI60R165CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI60R165CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI60R165CPXKSA1?

IPI60R165CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI60R165CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI60R165CPXKSA1?

For technical support, including IPI60R165CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI60R165CPXKSA1 requirements.

6.How does Aetrix verify that IPI60R165CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI60R165CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI60R165CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPI60R165CPXKSA1?

All IPI60R165CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI60R165CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI60R165CPXKSA1 part is unused and in its original packaging.

Return procedure for IPI60R165CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …