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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N04S303AKSA1

Name: IPI80N04S303AKSA1
Brand: Infineon Technologies
SKU: IPI80N04S303AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI80N04S303AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N04S303AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO262-3

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Product details

Overview

IPI80N04S303AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO262-3-1 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 100 °C, and ultra-low 2.5–3.2 mΩ R_DS(on) (SMD version). It operates up to 175 °C, is AEC-Q101 qualified, and is used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPI80N04S303AKSA1 datasheet, IPI80N04S303AKSA1 pinout, IPI80N04S303AKSA1 application, or IPI80N04S303AKSA1 equivalent, key selection criteria include its 0.8 K/W R_thJC, 100% avalanche-tested ruggedness, gate plateau voltage of 5.4 V, and diode forward voltage of 1.0–1.3 V at 80 A - critical for synchronous rectification and bidirectional power flow design.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its dynamic parameters - C_iss = 5600–7300 pF, C_oss = 1540–2000 pF, and Q_g = 83–110 nC - support fast, efficient hard-switching at frequencies up to 200 kHz.

The integrated body diode exhibits t_rr = 46 ns and Q_rr = 73 nC under defined conditions (V_R = 20 V, dI/dt = 100 A/µs), enabling reliable operation in freewheeling and regenerative braking paths without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - supports 12 V nominal battery systems with 33 % headroom for load dump transients.
R_DS(on) max (SMD)	3.2 mΩ - enables ≤25.6 W conduction loss at 80 A, reducing heatsink requirements.
I_D continuous	80 A at T_C = 100 °C - sustains full-rated current in compact engine bay environments.
E_AS	526 mJ - withstands single-pulse inductive energy without failure in motor drive fault events.
R_thJC	0.8 K/W - allows direct thermal coupling to heatsink for high-power density PCB layouts.
V_GS(th)	2.1–4.0 V - ensures robust turn-on with standard 5 V or 3.3 V logic-level gate drivers.
Q_g	83–110 nC - determines gate driver power requirement and switching speed trade-off.

Pinout & Package

Package: PG-TO262-3-1 (leadframe-based surface-mount variant of TO-262, with isolated drain tab and gull-wing leads).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to exposed metal tab; requires insulated mounting or thermal pad for PCB heat transfer.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source routing and shunt-based current monitoring.
Gate	Control input for channel modulation	High-impedance terminal requiring <5.4 V plateau voltage for full enhancement; sensitive to ESD.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements.
100% avalanche tested	Each unit subjected to single-pulse inductive energy stress, ensuring field reliability in inductive load switching.
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU and JESD204B material standards.
Ultra-low R_DS(on)	2.5 mΩ typical (SMD) reduces I²R losses by >30 % vs. prior-generation 40 V MOSFETs at 80 A.
175 °C operating temperature	Enables placement near hot components (e.g., exhaust manifolds, inverters) without derating.

Applications

Engine Control Unit (ECU) Power Stage

Automotive DC-DC Converter

Use Scenario: High-side switch for fuel injector or solenoid driver in gasoline/diesel engine management.

IC Role / Device Role / Timing Role: Power switch controlling 12 V actuator current with precise on/off timing and PWM capability.

Use Value: Low R_DS(on) minimizes voltage drop during injection pulses, improving fuel metering accuracy and reducing thermal stress on PCB traces.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for infotainment and ADAS modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency at high load currents.

Use Value: 1.0–1.3 V V_SD and 46 ns t_rr reduce conduction and recovery losses, increasing conversion efficiency by ≥3 % at 60 A output.

Electric Power Steering (EPS) H-Bridge

12 V Battery Disconnect Switch

Use Scenario: Half-bridge leg in EPS motor driver delivering up to 80 A peak current to assist steering torque.

IC Role / Device Role / Timing Role: High-current switching element in bidirectional H-bridge topology with fast turn-on/turn-off control.

Use Value: 320 A pulsed rating and 526 mJ E_AS ensure safe operation during sudden torque reversal and stall conditions.

Use Scenario: Main isolation switch between starter battery and auxiliary loads (e.g., telematics, lighting) in start-stop systems.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay, enabling controlled soft-start and fault-isolation sequencing.

Use Value: MSL1 reflow compatibility and 260 °C peak solder tolerance allow automated assembly alongside other SMT components on same board.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S3-03	Same die, PG-TO263-3-2 package with exposed drain pad; R_thJC = 0.8 K/W identical but better PCB thermal spreading.	Preferred for thermally constrained SMD-only designs requiring maximum heatsinking via copper area.	Select when board layout permits large thermal pad and no through-hole mounting is needed.
IPP80N04S3-03	Same die, PG-TO220-3-1 through-hole package; higher R_thJA (62 K/W) but mechanically robust for high-vibration environments.	Suitable for legacy automotive modules using through-hole assembly and discrete heatsinks.	Choose when mechanical stability and serviceability outweigh SMT density benefits.

Compared with IPB80N04S3-03 and IPP80N04S3-03, IPI80N04S303AKSA1 offers identical electrical performance in a gull-wing leaded SMD package that balances thermal performance, reflow compatibility, and mechanical retention - ideal for hybrid assembly where some components require through-hole mounting but space-constrained areas demand surface-mount solutions.

Availability

IPI80N04S303AKSA1 is available at Aetrix Electronics and suitable for automotive powertrain control, electric power steering systems, and 12 V DC-DC conversion requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IPI80N04S303AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T product line, engineered specifically for high-current, high-temperature automotive power switching applications demanding low R_DS(on), rugged avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum junction temperature and how does it affect derating?

The absolute maximum junction temperature is +175 °C. Derating begins at T_C = 25 °C, where I_D = 80 A is fully supported; above 100 °C case temperature, current must be linearly reduced to maintain T_j ≤ 175 °C, governed by R_thJC = 0.8 K/W and applied heatsink resistance.

Is this MOSFET suitable for synchronous rectification in a 12 V buck converter?

Yes - its 1.0–1.3 V V_SD at 80 A and 46 ns reverse recovery time enable efficient synchronous rectification. Combined with low Q_g (83–110 nC) and fast t_r/t_f, it supports high-frequency operation up to 200 kHz while minimizing body-diode conduction loss.

Does the device require a gate resistor, and what value is recommended?

A gate resistor is required to control dV/dt and prevent oscillation. For 80 A switching with typical gate drivers (e.g., 1 A peak), a 3.5 Ω resistor is validated in the datasheet for t_d(on) = 25 ns and t_r = 17 ns; values between 2.2 Ω and 10 Ω balance speed, EMI, and driver stress.

How is avalanche ruggedness verified and what does 526 mJ represent?

Avalanche energy is measured per JEDEC JESD24-11 using single-pulse inductive test circuits. The 526 mJ rating reflects the maximum energy the device can absorb at T_j = 25 °C without parametric shift or failure - critical for surviving short-circuit or inductive kickback events in motor drives.

IPI80N04S303AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI80N04S303AKSA1 FAQ

1.How can I place an order for IPI80N04S303AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N04S303AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N04S303AKSA1 reliable?

The price and inventory of IPI80N04S303AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N04S303AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI80N04S303AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N04S303AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N04S303AKSA1?

IPI80N04S303AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N04S303AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N04S303AKSA1?

For technical support, including IPI80N04S303AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N04S303AKSA1 requirements.

6.How does Aetrix verify that IPI80N04S303AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80N04S303AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N04S303AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80N04S303AKSA1?

All IPI80N04S303AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N04S303AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N04S303AKSA1 part is unused and in its original packaging.

Return procedure for IPI80N04S303AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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