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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI80N04S403AKSA1

Name: IPI80N04S403AKSA1
Brand: Infineon Technologies
SKU: IPI80N04S403AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI80N04S403AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI80N04S403AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO262-3

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Product details

Overview

IPI80N04S403AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 40 V V_DS, 3.3 mΩ max R_DS(on) at 10 V V_GS, and 80 A continuous drain current at T_C = 100 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested - deployed in automotive DC-DC converters and motor control stages.

For engineers reviewing the IPI80N04S403AKSA1 datasheet, IPI80N04S403AKSA1 pinout, IPI80N04S403AKSA1 application, or IPI80N04S403AKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (200 mJ), gate charge profile (Q_g = 51–66 nC), and thermal resistance (R_thJC = 1.6 K/W).

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current 12 V automotive systems. Its 3.3 mΩ R_DS(on) enables efficient operation under high-duty-cycle loads, while the 5.8 V gate plateau voltage ensures robust turn-on margin against noise-induced misfiring.

The MOSFET supports fast switching with t_r = 12 ns and t_f = 16 ns at V_DD = 20 V, I_D = 80 A, and R_G = 3.5 Ω. Its C_iss = 4050–5260 pF and Crss = 31–71 pF enable predictable drive requirements and EMI-controlled transitions in synchronous rectification and H-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) max	3.3 mΩ at V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 80 A, critical for thermally constrained modules.
I_D continuous	80 A at T_C = 100 °C - Sustains full-rated current in engine bay environments without derating.
E_AS	200 mJ at I_D = 40 A - Withstands repetitive inductive switching surges in motor drives without failure.
Q_g	51–66 nC - Defines gate driver current demand; enables use of medium-power drivers like 1EDN7512B.
R_thJC	1.6 K/W - Allows direct heatsink mounting with minimal thermal interface resistance for compact thermal design.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard 5 V logic-level gate drivers and noise immunity above 1 V.

Pinout & Package

Package: PG-TO262-3-1 (3-pin, straight lead, surface-mount compatible variant of TO-262). Thermally enhanced plastic case with isolated drain tab for PCB heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Low-inductance connection point for source loop routing; ties directly to ground plane or low-side shunt.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; routed away from noisy power traces to prevent false triggering.
Pin 3 (Drain)	Main current-carrying terminal (connected to die substrate)	Exposed metal tab electrically connected to drain; must be soldered to large copper area for thermal and electrical performance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST.
100% avalanche tested	Each unit subjected to single-pulse inductive energy stress at 200 mJ - guarantees ruggedness in unclamped inductive switching.
MSL1 rating	Compatible with standard 260 °C peak reflow profiles without popcorn or delamination risk.
Green product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU and JEDEC J-STD-020.
OptiMOS™-T2 trench architecture	Reduces R_DS(on) × Q_g figure-of-merit by >25% vs. prior generation, improving efficiency in hard-switched SMPS.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) H-Bridge

Use Scenario: 12 V to 5 V/3.3 V buck converter supplying ADAS camera modules and radar ECUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 250–500 kHz with forced-air cooling.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 5 mΩ parts, enabling >95% efficiency at 40 A output.

Use Scenario: Bidirectional motor drive in column-assist EPS systems with torque ripple < 0.5 N·m.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, commutated at ≤20 kHz with active freewheeling.

Use Value: 200 mJ avalanche capability absorbs flyback energy during sudden brake commands without snubber circuits.

On-Board Charger (OBC) Input Stage

12 V Battery Disconnect Switch

Use Scenario: AC/DC PFC front-end stage handling 3.3 kW input in bi-directional OBCs for BEVs.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), driven by SiC-compatible gate driver.

Use Value: Q_g = 51–66 nC allows precise timing control with <50 ns dead-time margin, minimizing shoot-through risk.

Use Scenario: Solid-state replacement for mechanical relay in 12 V battery main disconnect for start-stop and energy recovery.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch controlled via CAN-based BMS command.

Use Value: 175 °C max operating temperature ensures reliability during extended engine-off cabin heating cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S403AKSA1	PG-TO263-3-2 package; identical R_DS(on), Q_g, and avalanche rating	Requires different PCB footprint and heatsink interface due to D²PAK outline	Select when board layout supports larger thermal pad and higher assembly yield with gull-wing leads.
IPP80N04S403AKSA1	PG-TO220-3-1 package; same silicon but higher R_thJA (62 K/W vs. 40 K/W on 6 cm² PCB)	Suitable for lower-power prototypes or non-automotive industrial use with external heatsink	Prefer for cost-sensitive, non-AEC designs where manual assembly and discrete heatsinking are acceptable.

Compared with IPB80N04S403AKSA1 and IPP80N04S403AKSA1, IPI80N04S403AKSA1 offers optimal thermal performance in space-constrained automotive modules via its PG-TO262-3-1 leadframe design - balancing manufacturability, thermal resistance, and qualification compliance without package-related derating.

Availability

IPI80N04S403AKSA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, on-board chargers, and battery management systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPI80N04S403AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, headquartered in Munich.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power systems including engine control, ADAS, and electrified chassis functions.

FAQ

What is the maximum allowable gate-source voltage for IPI80N04S403AKSA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10 V for full R_DS(on) utilization, with minimum 6 V to ensure robust turn-on across temperature and process variation. Gate drive circuits must include clamping diodes or Zener protection to limit transient overshoot.

Does IPI80N04S403AKSA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For typical 200–500 kHz switching in automotive DC-DC converters, a 3.5 Ω resistor is validated per datasheet test conditions. Values between 2.2 Ω and 10 Ω are used depending on EMI targets and driver capability; lower values increase switching speed but raise EMI risk.

Can IPI80N04S403AKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derating to 70–75% of total rated current per device is recommended to account for thermal coupling and parameter spread.

Is the drain tab of IPI80N04S403AKSA1 electrically isolated?

No - the exposed drain tab is electrically connected to Pin 3 (Drain) and must be isolated from other conductive surfaces using insulating thermal pads or ceramic substrates. Direct mounting to a grounded heatsink requires isolation hardware; failure to isolate causes short-circuit failure.

IPI80N04S403AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 53µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI80N04S403AKSA1 FAQ

1.How can I place an order for IPI80N04S403AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N04S403AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N04S403AKSA1 reliable?

The price and inventory of IPI80N04S403AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N04S403AKSA1 is usually 5 days.

3.What payment methods are accepted for IPI80N04S403AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N04S403AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N04S403AKSA1?

IPI80N04S403AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N04S403AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N04S403AKSA1?

For technical support, including IPI80N04S403AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N04S403AKSA1 requirements.

6.How does Aetrix verify that IPI80N04S403AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPI80N04S403AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N04S403AKSA1 meets industry standards.

7.What is the process for return or replacement of IPI80N04S403AKSA1?

All IPI80N04S403AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N04S403AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N04S403AKSA1 part is unused and in its original packaging.

Return procedure for IPI80N04S403AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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