Infineon Technologies IPI80N04S4L04AKSA1
- Part No.:
- IPI80N04S4L04AKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI80N04S4L04AKSA1.pdf
- Description:
- MOSFET N-CH 40V 80A TO262-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,152
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Product details
Overview
IPI80N04S4L04AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO262-3-1 package, rated for 40 V VDS, 4.0 mΩ max RDS(on) at VGS = 10 V and ID = 80 A, with 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits.
For engineers reviewing the IPI80N04S4L04AKSA1 datasheet, IPI80N04S4L04AKSA1 pinout, IPI80N04S4L04AKSA1 application, or IPI80N04S4L04AKSA1 equivalent, key selection criteria include its 4.0 mΩ RDS(on) at 10 V gate drive, 100% avalanche-tested ruggedness, AEC-Q101 qualification, and thermal resistance of 2.1 K/W (junction-to-case).
Technical Context
This OptiMOS™-T2 power transistor uses trench-gate superjunction technology to achieve low on-resistance and optimized charge characteristics. Its gate threshold voltage (1.2–2.2 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 46–60 nC total gate charge supports efficient high-frequency switching up to 100 kHz in hard-switched topologies.
The device integrates a robust body diode with 39 ns reverse recovery time and 35 nC Qrr, enabling synchronous rectification and freewheeling in half-bridge configurations. Its 100 mJ single-pulse avalanche energy rating ensures reliable operation under inductive load switching stress without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems |
| RDS(on) max | 4.0 mΩ @ VGS = 10 V, ID = 80 A - Enables <1 W conduction loss at 80 A continuous current |
| ID continuous | 80 A @ TC = 100 °C - Sustains full-rated current in engine bay environments |
| EAS | 100 mJ - Withstands single-pulse inductive energy without failure in motor drive fault conditions |
| Qg | 46–60 nC - Determines gate driver power requirement and switching speed in PWM applications |
| RthJC | 2.1 K/W - Enables direct heatsink mounting for thermal management in space-constrained modules |
| Tj max | +175 °C - Supports operation in under-hood locations per AEC-Q101 requirements |
Pinout & Package
Package: PG-TO262-3-1 (3-pin, straight lead, surface-mount compatible variant of TO-262). Case material: thermally enhanced epoxy; mounting surface: isolated drain tab for direct heatsink attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to PCB ground plane or source return path |
| Pin 2 (Gate) | Control input | Receives PWM signal; requires <60 nC charge to fully enhance channel |
| Pin 3 (Drain) | Power output | High-current path to load; electrically connected to metal tab for thermal conduction |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications per stress test requirements |
| 100% avalanche tested | Each unit subjected to single-pulse EAS stress to guarantee ruggedness in inductive switching |
| MSL1 rating | Compatible with standard 260 °C peak reflow profiles without moisture sensitivity concerns |
| Green product (RoHS) | Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU |
| Optimized Qgd/Qgs ratio | 5–12 nC / 12–16 nC enables controlled dV/dt and reduced EMI in high-speed switching |
Applications
| Automotive DC-DC Converters | Electric Power Steering (EPS) Inverters |
|---|---|
Use Scenario: Step-down conversion from 48 V or 12 V battery to 5 V/3.3 V for ADAS ECUs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz PWM frequency. Use Value: 4.0 mΩ RDS(on) reduces conduction loss by >30% vs. legacy 6 mΩ devices, improving efficiency at 60 A load. | Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in steering column assembly. IC Role / Device Role / Timing Role: Low-side power switch in 60 kHz PWM-controlled H-bridge leg. Use Value: 175 °C Tj max and 2.1 K/W RthJC enable sustained 80 A peak current without derating in sealed EPS housing. |
| Battery Disconnect Units (BDU) | 48 V Mild Hybrid Starter Generators |
Use Scenario: Solid-state contactor replacing mechanical relay in high-voltage battery isolation circuits. IC Role / Device Role / Timing Role: Normally-open power switch controlling main battery feed to vehicle sub-systems. Use Value: 100 mJ EAS rating ensures safe interruption of 200 A fault currents without destructive avalanche failure. | Use Scenario: Bi-directional power switch in 48 V/12 V dual-battery energy transfer system. IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost converter during regenerative braking. Use Value: 39 ns trr and low Qrr minimize reverse recovery losses at 100 kHz switching, increasing round-trip efficiency by 1.2%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB80N04S4L04AKSA1 | PG-TO263-3-2 package; 0.3 K/W lower RthJA on 6 cm² PCB vs. TO262 version | Better suited for SMD-only production; slightly higher assembly cost | Select when board space allows larger footprint and thermal performance is prioritized over leaded assembly |
| IPP80N04S4L04AKSA1 | PG-TO220-3-1 package; 10% higher RthJC (2.3 K/W); identical electrical specs | Preferred for through-hole prototyping and service replacement | Select for manual assembly, field repair, or legacy TO-220 socket compatibility |
Compared with IPB80N04S4L04AKSA1 and IPP80N04S4L04AKSA1, the IPI80N04S4L04AKSA1 offers optimal balance of thermal performance (2.1 K/W RthJC), manufacturability (lead-frame SMD), and AEC-Q101 compliance-making it the default choice for volume automotive production where automated placement and under-hood reliability are critical.
Availability
IPI80N04S4L04AKSA1 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid systems, and industrial motor drives requiring stable component supply across multi-year production cycles.
Supply support for IPI80N04S4L04AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V/48 V power networks and industrial motor control.
FAQ
Is IPI80N04S4L04AKSA1 suitable for 3.3 V microcontroller gate drive?
Yes. Its gate threshold voltage range (1.2–2.2 V) ensures full enhancement at 3.3 V logic levels, and its 12–16 nC Qgs allows reliable turn-on with standard GPIO drivers. However, a dedicated gate driver is recommended for >100 kHz operation to minimize switching losses.
What is the maximum PCB copper area required to achieve RthJA = 40 K/W?
A minimum 6 cm² of 70 µm thick copper on FR4 PCB (single layer, vertical orientation in still air) is required to achieve RthJA = 40 K/W. This configuration is validated per JEDEC JESD51-2 and documented in the official datasheet Rev. 1.0, page 2.
Does this MOSFET include integrated ESD protection?
No. The device does not integrate on-chip ESD protection diodes. External TVS or RC snubbers are required on gate and drain lines in automotive environments to meet ISO 10605 ±8 kV contact discharge requirements.
Can IPI80N04S4L04AKSA1 replace IPP80N04S4L04AKSA1 in existing TO-220 layouts?
No. The PG-TO262-3-1 package has different lead pitch and mounting hole pattern than TO-220. Direct replacement requires PCB redesign. However, both share identical marking (4N04L04), electrical specs, and thermal limits-enabling functional equivalence after layout adaptation.
IPI80N04S4L04AKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4690 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 71W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI80N04S4L04AKSA1 FAQ
1.How can I place an order for IPI80N04S4L04AKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI80N04S4L04AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI80N04S4L04AKSA1 reliable?
The price and inventory of IPI80N04S4L04AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N04S4L04AKSA1 is usually 5 days.
3.What payment methods are accepted for IPI80N04S4L04AKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N04S4L04AKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI80N04S4L04AKSA1?
IPI80N04S4L04AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI80N04S4L04AKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI80N04S4L04AKSA1?
For technical support, including IPI80N04S4L04AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N04S4L04AKSA1 requirements.
6.How does Aetrix verify that IPI80N04S4L04AKSA1 is sourced from the original manufacturer or authorized distributors?
All IPI80N04S4L04AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N04S4L04AKSA1 meets industry standards.
7.What is the process for return or replacement of IPI80N04S4L04AKSA1?
All IPI80N04S4L04AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N04S4L04AKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI80N04S4L04AKSA1 part is unused and in its original packaging.
Return procedure for IPI80N04S4L04AKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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