Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPI80N06S407AKSA2

Part No.:
IPI80N06S407AKSA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIPI80N06S407AKSA2.pdf
Description:
MOSFET N-CH 60V 80A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:675

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPI80N06S407AKSA2 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-TO262-3-1 package, rated for 60 V VDS, 7.1 mΩ RDS(on) max at 10 V VGS, and 80 A continuous drain current at TC = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested, targeting high-reliability automotive power switching applications such as DC-DC converters and motor control stages.

For engineers reviewing the IPI80N06S407AKSA2 datasheet, IPI80N06S407AKSA2 pinout, IPI80N06S407AKSA2 application, or IPI80N06S407AKSA2 equivalent, key selection criteria include its 1.9 K/W RthJC, 6.2 mΩ typical RDS(on), 43–56 nC total gate charge, 3460–4500 pF input capacitance, and integrated body diode with 39 ns trr and 0.95 V VSD at 80 A.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity, and its 100% unclamped inductive switching (UIS) tested design supports reliable operation under transient overloads.

The MOSFET features a monolithic silicon die with integrated source-connected body diode exhibiting fast reverse recovery (trr = 39 ns typ.) and low Qrr (38 nC), reducing commutation losses in synchronous rectification and half-bridge topologies. Thermal performance is defined by a 1.9 K/W junction-to-case resistance, validated under standard JEDEC PCB mounting conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage for 12 V battery rail systems with 2× transient margin.
RDS(on) max7.1 mΩ at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 80 A, critical for thermal management in compact modules.
ID continuous80 A at TC = 25 °C - Supports high-current loads such as starter relays and HVAC blowers without external heatsink derating.
EAS71 mJ at ID = 40 A - Confirmed single-pulse avalanche energy rating ensures survivability during inductive turn-off transients.
Qg43–56 nC - Determines gate driver power requirement and switching speed trade-off in PWM-controlled inverters.
trr39 ns - Fast body diode recovery minimizes shoot-through risk and reduces snubber losses in bridge configurations.
RthJC1.9 K/W - Enables precise junction temperature estimation using case temperature measurement in production thermal monitoring.

Pinout & Package

Package: PG-TO262-3-1 (3-pin, straight lead, through-hole variant of TO-262). Exposed drain tab on underside for thermal conduction to heatsink or PCB copper plane.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or current-sense shunt for accurate phase current monitoring.
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring <56 nC charge for full enhancement; sensitive to ESD and layout parasitics.
Pin 3 (Drain)Power outputInternally connected to exposed metal tab; must be soldered to large copper area or heatsink for thermal integrity.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
100% UIS testedEach unit passes unclamped inductive switching test at 40 A, ensuring field reliability in motor drive fault conditions.
Green Product (RoHS)Lead-free termination and halogen-free molding compound compliant with EU Directive 2011/65/EU and JESD204.
MSL1 ratingMoisture sensitivity level 1 allows unlimited floor life and peak reflow up to 260 °C without popcorn failure risk.
175 °C operating TjEnables use in engine bay environments where ambient temperatures exceed 125 °C, with full RDS(on) derating curve provided.

Applications

Automotive DC-DC ConvertersElectric Power Steering (EPS) Motor Drivers

Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck conversion for ADAS camera and radar modules.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology operating at 200–500 kHz.

Use Value: 7.1 mΩ RDS(on) and 39 ns trr reduce conduction and recovery losses, enabling >95% efficiency at 20 A load.

Use Scenario: Three-phase inverter stage driving 300–500 W brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side power switch in half-bridge configuration with active freewheeling via body diode.

Use Value: 100% UIS rating and 175 °C Tj support continuous torque delivery during parking maneuvers with minimal thermal throttling.

Start-Stop System Solenoid ControlOn-Board Charger (OBC) Auxiliary Power Supply

Use Scenario: High-current solenoid actuation for engine restart in 48 V mild-hybrid start-stop systems.

IC Role / Device Role / Timing Role: Single-pole, high-side switch controlling 60–100 A inrush current to starter solenoid coil.

Use Value: 80 A ID rating and 71 mJ EAS ensure reliable engagement even under cold-cranking voltage dips to 6 V.

Use Scenario: Isolated auxiliary supply generating 12 V bias for OBC gate drivers and MCU from 400 V DC link.

IC Role / Device Role / Timing Role: Primary switch in flyback converter operating at 100 kHz with 1:20 turns ratio.

Use Value: Low Crss (35–70 pF) and controlled Vplateau (6.0 V) enable stable zero-voltage switching (ZVS) behavior across line and load variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N06S407AKSA2PG-TO263-3-2 package; identical die, lower RthJA on PCB due to surface-mount thermal padBetter suited for automated SMT assembly and higher-power density layoutsSelect when board space is constrained and thermal interface to PCB is optimized.
IPP80N06S407AKSA2PG-TO220-3-1 package; same electrical specs but higher RthJC (2.2 K/W) and no MSL1 ratingPreferred for prototyping, manual assembly, or legacy through-hole designsSelect when hand-soldering or mechanical mounting to external heatsink is required.

Compared with IPB80N06S407AKSA2 and IPP80N06S407AKSA2, the IPI80N06S407AKSA2 offers identical silicon performance in a through-hole PG-TO262 package with MSL1 reflow capability-making it optimal for mixed-technology automotive boards needing both automated placement and mechanical robustness.

Availability

IPI80N06S407AKSA2 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering motor drives, and start-stop system solenoid control requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPI80N06S407AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T2 product line, engineered specifically for high-current, high-temperature automotive power switching where low RDS(on), robust avalanche capability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPI80N06S407AKSA2?

The absolute maximum VGS is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this range risks permanent gate oxide damage. Recommended drive voltage is 10 V for full enhancement, with minimum functional VGS(th) of 2.0 V and typical plateau at 6.0 V during switching transitions.

Does IPI80N06S407AKSA2 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 80 A switching at 200–500 kHz, a 3.5 Ω resistor is used in the datasheet's dynamic test condition (VDD = 48 V, ID = 80 A). Actual value depends on driver strength and EMI constraints, typically ranging from 2.2 Ω to 10 Ω.

Can IPI80N06S407AKSA2 be used in parallel configurations?

Yes-its positive RDS(on) temperature coefficient (RDS(on) increases with Tj) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors (0.01–0.02 Ω) are required to balance dynamic current distribution during switching transitions.

Is the body diode of IPI80N06S407AKSA2 suitable for synchronous rectification?

Yes-the body diode is characterized with trr = 39 ns and Qrr = 38 nC at Tj = 25 °C, enabling efficient synchronous operation in buck and flyback topologies. However, its VSD = 0.95 V at 80 A implies ~76 W conduction loss if used continuously, so synchronous FET replacement is advised for >10 A average current.

IPI80N06S407AKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
7.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3-1

IPI80N06S407AKSA2 FAQ

1.How can I place an order for IPI80N06S407AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI80N06S407AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI80N06S407AKSA2 reliable?

The price and inventory of IPI80N06S407AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI80N06S407AKSA2 is usually 5 days.

3.What payment methods are accepted for IPI80N06S407AKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI80N06S407AKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI80N06S407AKSA2?

IPI80N06S407AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI80N06S407AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI80N06S407AKSA2?

For technical support, including IPI80N06S407AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI80N06S407AKSA2 requirements.

6.How does Aetrix verify that IPI80N06S407AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPI80N06S407AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI80N06S407AKSA2 meets industry standards.

7.What is the process for return or replacement of IPI80N06S407AKSA2?

All IPI80N06S407AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPI80N06S407AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI80N06S407AKSA2 part is unused and in its original packaging.

Return procedure for IPI80N06S407AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPI80N06S407AKSA2 Tags

  • IPI80N06S407AKSA2
  • IPI80N06S407AKSA2 PDF
  • IPI80N06S407AKSA2 Datasheet
  • IPI80N06S407AKSA2 Specifications
  • IPI80N06S407AKSA2 Images
  • Infineon Technologies
  • Infineon Technologies IPI80N06S407AKSA2
  • Buy IPI80N06S407AKSA2
  • IPI80N06S407AKSA2 Price
  • IPI80N06S407AKSA2 Distributor
  • IPI80N06S407AKSA2 Supplier
  • IPI80N06S407AKSA2 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER