Infineon Technologies IPI90R340C3XKSA2

Overview

IPI90R340C3XKSA2 from Infineon Technologies is a 900 V, 0.34 Ω (max) CoolMOS™ C3 superjunction power MOSFET in PG-TO262 (I2PAK) package, optimized for high-efficiency quasi-resonant flyback and forward SMPS topologies. It delivers 9.5 A continuous drain current at T_C = 100 °C, 94 nC total gate charge, and extreme dv/dt ruggedness up to 50 V/ns - enabling robust operation in consumer silverbox and industrial switch-mode power supplies.

For engineers reviewing the IPI90R340C3XKSA2 datasheet, IPI90R340C3XKSA2 pinout, IPI90R340C3XKSA2 application, or IPI90R340C3XKSA2 equivalent, key selection criteria include R_DS(on) vs. temperature stability, avalanche energy rating (678 mJ), gate charge profile, and TO262 thermal resistance (0.6 K/W).

Technical Context

This device implements a superjunction trench-gate structure with optimized charge compensation for ultra-low R_DS(on) × Q_g figure-of-merit. Its 900 V breakdown voltage and 2.5–3.5 V gate threshold support reliable hard-switching and QR operation under 400 V DC-link conditions.

The integrated body diode features 510 ns reverse recovery time and 11 µC Q_rr, with controlled di/dt immunity (≤200 A/µs) and reverse dv/dt rating of 4 V/ns - critical for synchronous rectification and half-bridge configurations where commutation stress is high.

Key Specifications

Pinout & Package

Package: PG-TO262 (I2PAK), 3-pin through-hole, isolated tab (drain-connected), RoHS-compliant lead plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW90R340C3FKSA1, IPI90R340C3XKSA2 offers superior board-level thermal management in compact TO262 layouts, while STP90NF03L fails basic voltage qualification - confirming strict 900 V requirement drives part selection.

Availability

IPI90R340C3XKSA2 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS, consumer TV power boards, and LED driver power stages requiring stable component supply across multi-year production cycles.

Supply support for IPI90R340C3XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ C3 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in consumer and industrial power supplies operating at 400–450 V DC-link voltages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPI90R340C3XKSA2 supports 9.5 A continuous drain current at T_C = 100 °C, as specified in its absolute maximum ratings table. This value accounts for thermal derating from the 15 A rating at 25 °C and reflects real-world conduction capability under typical heatsink-limited conditions in enclosed power supplies.

Does this MOSFET require a negative gate turn-off voltage?

No. The IPI90R340C3XKSA2 has a gate threshold voltage range of 2.5–3.5 V and is fully compatible with 0 V to +10 V or +12 V gate drive. Negative turn-off is unnecessary due to its low gate charge (94 nC) and high dv/dt immunity (50 V/ns), which suppress false triggering.

Is the body diode suitable for synchronous rectification?

The integrated body diode has 510 ns reverse recovery time and 11 µC Q_rr, making it usable in DCM flyback applications but not recommended for high-frequency synchronous rectification. For such use, an external Schottky or GaN FET is preferred to minimize recovery losses.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_J = 25 °C, the SOA limits the device to approximately 25 A at 400 V - defined by both thermal constraints and maximum avalanche energy. This is confirmed by the SOA graph on page 4 of the official datasheet (Rev. 1.1), where the 100 µs curve intersects the 400 V line near 25 A.