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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R065C7AUMA1

Name: IPL60R065C7AUMA1
Brand: Infineon Technologies
SKU: IPL60R065C7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL60R065C7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R065C7AUMA1.pdf

Description:: MOSFET HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPL60R065C7AUMA1 from Infineon Technologies is a 600V, 65 mΩ R_DS(on) superjunction MOSFET in ThinPAK 8x8 SMD package with Kelvin source configuration (4-pin), optimized for high-efficiency PFC and LLC resonant converters in server, telecom, and solar power supplies. It delivers 51 A continuous drain current at T_j < 150°C, 120 V/ns dv/dt ruggedness, and 8.1 µJ E_oss @ 400V.

For engineers reviewing the IPL60R065C7AUMA1 datasheet, IPL60R065C7AUMA1 pinout, IPL60R065C7AUMA1 application, or IPL60R065C7AUMA1 equivalent, key selection criteria include its 4-pin Kelvin source layout for gate control stability, low parasitic inductance, R_DS(on) × E_oss figure-of-merit, industrial-grade JEDEC qualification, and suitability for hard/soft-switching topologies.

Technical Context

This CoolMOS™ C7 device implements a superjunction structure enabling sub-1 Ω·mm² R_DS(on)×A performance. Its 4-pin Kelvin source (Pin 2 = driver source, Pins 3–4 = power source) separates high-current and control return paths to minimize gate loop inductance and suppress oscillation during fast switching.

The MOSFET supports high dv/dt stress up to 120 V/ns and exhibits 370 A/µs body diode commutation speed, making it suitable for high-frequency resonant converters where reverse recovery behavior critically impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage rating, supporting 400 V DC-link operation with 50% margin for transient overvoltage in telecom/solar PFC stages.
R_DS(on), max	65 mΩ @ T_j = 150°C - Confirmed on-resistance ensuring thermal stability under full-load conditions in high-power SMPS.
Q_g, typ	68 nC - Total gate charge enabling predictable drive strength requirements and loss calculation for 100–300 kHz operation.
E_oss @ 400V	8.1 µJ - Energy stored in output capacitance, directly impacting turn-on losses in hard-switched PFC and zero-voltage switching in LLC.
dv/dt ruggedness	120 V/ns - Robustness against false triggering during high-slew-rate switching, reducing need for snubbers in high-density designs.
di_F/dt	370 A/µs - Body diode commutation speed enabling reliable synchronous rectification and reduced reverse recovery loss in bridge configurations.
T_j max	150 °C - Junction temperature limit validated per JEDEC JESD22-A108, supporting industrial ambient and forced-air-cooled deployments.

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, leadless, thermally enhanced with exposed drain pad. Pin 1 = Gate, Pin 2 = Driver Source (Kelvin), Pins 3–4 = Power Source (parallel-connected).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main control terminal; driven by isolated gate driver; low-inductance path critical for <12 ns turn-on delay.
Pin 2	Driver Source (Kelvin)	Dedicated low-current source return for gate driver feedback, eliminating source inductance impact on switching waveform fidelity.
Pins 3 & 4	Power Source	Parallel high-current source terminals; connected internally to source metallization; handle full 51 A continuous conduction.
Drain Pad (bottom)	Drain	Exposed copper thermal pad; primary heat transfer path to PCB; requires solder stencil design for optimal thermal resistance (R_thJC = 0.696 °C/W).

Key Features

Feature	Design Value
4-pin Kelvin source configuration	Separates gate drive return from power return, reducing gate loop inductance by >50% vs. 3-pin packages and enabling stable 100+ kHz switching without oscillation.
R_DS(on) × E_oss FOM	Best-in-class figure-of-merit confirmed in datasheet Rev. 2.1, directly enabling up to 0.5% higher full-load efficiency vs. prior-gen 3-pin equivalents at 100 kHz.
120 V/ns dv/dt ruggedness	Validated under dynamic stress conditions, allowing simplified gate drive design and elimination of external dv/dt snubbers in high-density PFC modules.
JEDEC industrial qualification	Qualified per J-STD-020 (MSL2a) and JESD22-A108, supporting reflow assembly and 150 °C continuous operation in telecom rectifiers and server VRMs.
Low parasitic inductance SMD package	ThinPAK 8x8 layout minimizes source and drain loop inductance, improving EMI signature and enabling compact 2-layer PCB layouts for 1–3 kW SMPS.

Applications

Server Power Supply PFC Stage

Telecom Rectifier LLC Resonant Converter

Use Scenario: Active front-end boost PFC stage in 1U 2 kW server PSU operating at 100 kHz with digital control.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter; switches at fixed frequency with variable duty cycle.

Use Value: 65 mΩ R_DS(on) and 8.1 µJ E_oss reduce conduction + switching losses, enabling >96.5% PFC efficiency while meeting 80 PLUS Titanium requirements.

Use Scenario: Primary-side switch in half-bridge LLC resonant converter for -48 V telecom rectifier delivering 1.5 kW.

IC Role / Device Role / Timing Role: ZVS-capable power switch operating at 200–350 kHz; leverages low Q_gd/Q_g ratio and 120 V/ns dv/dt immunity for robust light-load regulation.

Use Value: 370 A/µs di_F/dt and soft-recovery body diode enable reliable zero-voltage switching across line/load range, reducing transformer stress and audible noise.

Solar Inverter DC-DC Stage

Industrial UPS Half-Bridge Inverter

Use Scenario: Isolated DC-DC stage in string inverter auxiliary power supply, converting 800 V PV input to 12 V control rail.

IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology; operates with adaptive dead-time control.

Use Value: 650 V V_DS rating and 150 °C T_j max support wide input voltage range and uncooled operation in outdoor enclosures.

Use Scenario: Output inverter stage in 5 kVA double-conversion UPS, switching 400 V DC bus into 230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in IGBT-driven half-bridge; used for active short-circuit protection and regenerative braking control.

Use Value: 135 A pulsed current rating and 159 mJ single-pulse avalanche energy provide fault ride-through capability during grid transients and short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R070C7	TO-247-3 package; 70 mΩ R_DS(on); no Kelvin source; higher R_thJA (62 °C/W vs. 35–45 °C/W for ThinPAK)	Preferred for through-hole prototyping or lower-frequency (<65 kHz) PFC where thermal mass outweighs switching loss sensitivity	Select when board space allows TO-247 and thermal design prioritizes simplicity over peak efficiency.
STP60N062DM9	600 V, 62 mΩ, DPAK package; no Kelvin source; 75 nC Q_g; lower dv/dt rating (80 V/ns)	Suitable for cost-sensitive industrial SMPS below 500 W where layout density and EMI are less critical	Choose only if PCB area constraints preclude ThinPAK and system-level dv/dt stress remains below 80 V/ns.

Compared with IPW60R070C7 and STP60N062DM9, IPL60R065C7AUMA1 offers superior high-frequency efficiency via Kelvin source and lower E_oss, but requires careful gate layout; IPW60R070C7 trades efficiency for mechanical robustness, while STP60N062DM9 lacks dv/dt immunity needed for modern resonant topologies.

Availability

IPL60R065C7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPL60R065C7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap technologies for industrial, automotive, and energy systems.

The CoolMOS™ C7 product line was engineered specifically for high-efficiency, high-power-density switched-mode power supplies, targeting 100–500 kHz operation in PFC, LLC, and phase-shifted full-bridge topologies where switching loss dominates total loss.

FAQ

What is the purpose of the separate Driver Source (Pin 2) in IPL60R065C7AUMA1?

Pin 2 provides a dedicated Kelvin connection for the gate driver's source return path, isolating it from high-current source paths (Pins 3–4). This eliminates source inductance-induced voltage spikes during switching transitions, stabilizing gate drive waveforms and preventing false turn-on-critical for reliable 100+ kHz operation in PFC and LLC converters.

Can IPL60R065C7AUMA1 be paralleled with identical units?

Yes, but gate drive must be individually buffered: use separate totem-pole drivers or ferrite beads on each gate line to prevent oscillation and current imbalance. The datasheet explicitly recommends this due to tight parameter matching and low gate threshold variation (3.0–4.0 V), which enables balanced sharing-but only with controlled gate loop inductance.

How does IPL60R065C7AUMA1's E_oss compare to previous CoolMOS generations?

At 8.1 µJ @ 400V, IPL60R065C7AUMA1 achieves ~25% lower E_oss than C6-series equivalents (e.g., IPL60R170C6: ~10.8 µJ), directly reducing turn-on loss in hard-switched PFC and improving ZVS margin in LLC. This is enabled by refined superjunction cell pitch and optimized oxide thickness per the C7 process node.

Is IPL60R065C7AUMA1 suitable for automotive applications?

No-it is qualified only for industrial-grade operation per JEDEC JESD22-A108 (T_j = –40 to +150 °C), not AEC-Q101. Automotive designs require additional stress testing, lot traceability, and failure rate reporting not covered in this part's qualification scope; Infineon's OptiMOS™ or automotive-specific CoolMOS™ variants should be used instead.

IPL60R065C7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 15.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 800µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2850 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4-1

IPL60R065C7AUMA1 FAQ

1.How can I place an order for IPL60R065C7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R065C7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R065C7AUMA1 reliable?

The price and inventory of IPL60R065C7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R065C7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R065C7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R065C7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R065C7AUMA1?

IPL60R065C7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R065C7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R065C7AUMA1?

For technical support, including IPL60R065C7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R065C7AUMA1 requirements.

6.How does Aetrix verify that IPL60R065C7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R065C7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R065C7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R065C7AUMA1?

All IPL60R065C7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R065C7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R065C7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R065C7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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