Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPL60R085P7AUMA1

Part No.:
IPL60R085P7AUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
4-PowerTSFN
Datasheet:
AetrixIPL60R085P7AUMA1.pdf
Description:
MOSFET N-CH 600V 39A 4VSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:238

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPL60R085P7AUMA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in ThinPAK 8x8 package, featuring 85 mΩ max RDS(on), 51 nC total gate charge, and 800 A/µs body diode commutation speed. It serves as a high-efficiency primary-side switch in hard- and soft-switching topologies including PFC and LLC resonant converters for server PSUs and telecom rectifiers.

For engineers reviewing the IPL60R085P7AUMA1 datasheet, IPL60R085P7AUMA1 pinout, IPL60R085P7AUMA1 application, or IPL60R085P7AUMA1 equivalent, key selection criteria include its low Eoss (5.5 µJ @ 400 V), robust 110 A pulsed drain current, JEDEC-qualified industrial temperature range (−40 °C to 150 °C), and proven hard-commutation ruggedness in high-density AC-DC designs.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure optimized for reduced specific on-resistance (RDS(on)·A < 1 Ω·mm²) and minimized switching losses. Its gate plateau voltage of 5.2 V enables stable turn-on under wide VGS variation, while low Ciss (2180 pF) and Coss (37 pF) support high-frequency operation up to 300 kHz in resonant stages.

The integrated body diode delivers 800 A/µs diF/dt capability and 263 ns reverse recovery time at 400 V, enabling reliable zero-voltage switching without external snubbers. Thermal resistance RthJC is 0.82 °C/W, supporting high-power density layouts with minimal heatsinking in vertical PCB mounting.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Rated blocking voltage for primary-side switching in universal-input 400 V DC bus applications
RDS(on),max 85 mΩ @ Tj = 150 °C - Enables low conduction loss in continuous 39 A drain current operation
Qg,typ 51 nC - Low gate drive energy reduces driver IC stress and enables efficient 13 V gate drive with 3.3 Ω RG
Eoss 5.5 µJ @ 400 V - Minimizes turn-off loss in high-frequency PFC and LLC circuits
diF/dt 800 A/µs - Supports robust body-diode commutation in asymmetric half-bridge and totem-pole PFC
Tj,max 150 °C - Industrial-grade junction temperature rating validated per JEDEC JESD47
Ptot 154 W @ TC = 25 °C - Sustains high power in compact ThinPAK 8x8 footprint without forced air

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, exposed drain pad for thermal performance. Pin 1: Gate; Pin 2: Source (Driver); Pin 3–4: Power Source (parallel source terminals); Pin 5: Drain (exposed pad).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate Control input with 4.8 Ω internal gate resistance; requires 13 V drive for full enhancement
Pin 2 Source (Driver) Low-inductance return path for gate driver loop; separate from power source pins to reduce noise coupling
Pins 3 & 4 Power Source Parallel source terminals carrying main load current; minimize source inductance in high-di/dt switching
Pin 5 (Drain Pad) Drain Exposed copper pad for direct thermal connection to PCB ground plane; handles 110 A pulsed current

Key Features

Feature Design Value
Hard & soft switching compatibility Validated for PFC and LLC topologies via 800 A/µs diF/dt and low ringing tendency
Low ESD sensitivity ≥2 kV HBM rating eliminates need for external ESD protection in automated assembly
Thermal efficiency 0.82 °C/W RthJC enables 154 W dissipation with passive cooling on 6 cm² copper area
Body diode ruggedness 118 mJ single-pulse avalanche energy supports unclamped inductive switching in flyback designs
Manufacturing quality JEDEC-qualified for industrial applications with MSL2a reflow profile compatibility up to 260 °C

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Primary-side switch in 3.5 kW front-end PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching transistor controlling input current waveform and regulating 400 V DC bus.

Use Value: 5.5 µJ Eoss and 85 mΩ RDS(on) enable >98% efficiency at full load with no active cooling.

Use Scenario: LLC resonant converter half-bridge switch in 2 kW telecom rectifier with 48 V output.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) enabled by fast body diode recovery (263 ns trr) and low Coss.

Use Value: 800 A/µs diF/dt ensures reliable commutation during ZVS transitions across line and load variations.

LCD TV Backlight Inverter Industrial UPS Charger

Use Scenario: Half-bridge switch in resonant inverter driving CCFL or LED backlight at 200–500 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element requiring low Qg (51 nC) and minimal switching loss.

Use Value: 2180 pF Ciss and 37 pF Coss allow clean square-wave drive with minimal gate drive power.

Use Scenario: Input-stage switch in bidirectional AC-DC/DC-AC charger for 3-phase 400 V industrial UPS.

IC Role / Device Role / Timing Role: Robust switching device handling repetitive avalanche events during grid transients.

Use Value: 118 mJ EAS and 0.58 mJ EAR ensure long-term reliability under 1000+ surge cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW60R099P7 99 mΩ RDS(on), same 600 V rating, higher Qg (58 nC), identical ThinPAK 8x8 package Slightly lower efficiency at high current due to +14 mΩ RDS(on); better suited for cost-sensitive 1–2 kW designs Select when marginally higher conduction loss is acceptable for BOM cost reduction
STP60N085F7 85 mΩ RDS(on), 650 V rating, TO-220FP package, 62 nC Qg, no JEDEC industrial qualification Requires larger heatsink due to higher RthJA (62 °C/W vs. 35–45 °C/W on PCB); not qualified for extended industrial life Choose only for prototyping or non-industrial applications where through-hole mounting is mandatory

Compared with IPW60R099P7 and STP60N085F7, IPL60R085P7AUMA1 delivers superior power density via lower RDS(on)·A, JEDEC industrial qualification, and optimized SMD thermal performance-making it the preferred choice for volume production of compact, high-reliability AC-DC systems.

Availability

IPL60R085P7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS chargers requiring stable component supply, long-lifecycle assurance, and traceable sourcing from Infineon's qualified fab.

Supply support for IPL60R085P7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 3.3 Ω for characterization at 400 V and 11.8 A. For 600 V operation with 110 A pulse current, a 2.2–4.7 Ω non-inductive resistor is recommended to balance switching speed and voltage overshoot. Higher values (>6.8 Ω) increase turn-off loss and risk incomplete turn-off during high-di/dt events.

Can IPL60R085P7AUMA1 be paralleled without gate ferrite beads?

No-Infineon explicitly recommends ferrite beads on each gate or individual totem-pole drivers when paralleling. Without them, gate oscillation and current imbalance occur due to layout-induced inductance mismatch, risking thermal runaway even with matched RDS(on) units.

Is this device suitable for synchronous rectification in secondary-side LLC?

No-it is a 600 V N-channel high-side switch designed for primary-side use. Its body diode forward voltage (0.9 V) and reverse recovery characteristics are optimized for hard commutation, not low-loss synchronous rectification, which requires dedicated 100 V-class logic-level MOSFETs with ultra-low VSD.

What PCB layout practices maximize thermal performance?

Use ≥6 cm² of 70 µm thick copper on the bottom layer connected directly to the exposed drain pad via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Keep gate and source traces short and symmetric; isolate power source (Pins 3–4) from driver source (Pin 2) to prevent ground bounce coupling into the gate loop.

IPL60R085P7AUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
4-PowerTSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2180 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
154W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-VSON-4

IPL60R085P7AUMA1 FAQ

1.How can I place an order for IPL60R085P7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R085P7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R085P7AUMA1 reliable?

The price and inventory of IPL60R085P7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R085P7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R085P7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R085P7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R085P7AUMA1?

IPL60R085P7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R085P7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R085P7AUMA1?

For technical support, including IPL60R085P7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R085P7AUMA1 requirements.

6.How does Aetrix verify that IPL60R085P7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R085P7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R085P7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R085P7AUMA1?

All IPL60R085P7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R085P7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R085P7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R085P7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPL60R085P7AUMA1 Tags

  • IPL60R085P7AUMA1
  • IPL60R085P7AUMA1 PDF
  • IPL60R085P7AUMA1 Datasheet
  • IPL60R085P7AUMA1 Specifications
  • IPL60R085P7AUMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPL60R085P7AUMA1
  • Buy IPL60R085P7AUMA1
  • IPL60R085P7AUMA1 Price
  • IPL60R085P7AUMA1 Distributor
  • IPL60R085P7AUMA1 Supplier
  • IPL60R085P7AUMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER