Infineon Technologies IPL60R095CFD7AUMA1

Overview

IPL60R095CFD7AUMA1 from Infineon Technologies is a 600 V, 95 mΩ ultra-low-R_DS(on) superjunction MOSFET in ThinPAK 8x8 package, featuring 51 nC gate charge, 1300 A/µs diF/dt ruggedness, and optimized fast-body-diode performance for soft-switching resonant topologies. It serves as a primary high-side or low-side switch in phase-shift full-bridge (ZVS) and LLC converters for server power supplies and EV charging stations.

For engineers reviewing the IPL60R095CFD7AUMA1 datasheet, IPL60R095CFD7AUMA1 pinout, IPL60R095CFD7AUMA1 application, or IPL60R095CFD7AUMA1 equivalent, key selection criteria include reverse recovery charge (Q_rr = 0.53–1.06 µC), E_oss = 5.9 µJ at 400 V, R_DS(on) temperature stability up to 150 °C, and validated hard commutation robustness per JEDEC22-A111.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with trench-gate cell design, enabling simultaneous reduction of R_DS(on) × Q_g (FOM) and R_DS(on) × E_oss. Its body diode exhibits 103–206 ns reverse recovery time and 1300 A/µs diF/dt rating under 400 V VR and 9.4 A IF conditions.

The MOSFET operates with gate plateau voltage of 5.6 V and supports 120 V/ns dv/dt ruggedness in switching applications. Thermal resistance junction-to-case is 0.85 °C/W, and it is qualified for industrial operation from −40 °C to +150 °C per JEDEC47/22 standards.

Key Specifications

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, drain-connected thermal pad on bottom side. Pin 1 = Gate, Pin 2 = Driver Source, Pin 3 & 4 = Power Source (common source), Pin 5 = Drain (exposed pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPW60R099C7 and IPP60R099C7, IPL60R095CFD7AUMA1 delivers superior high-frequency soft-switching performance via its Kelvin source pin, lower R_DS(on), and 3% lower Q_g, making it the only option qualified for >250 kHz LLC in space-constrained server and EV charger modules.

Availability

IPL60R095CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and surface-mount manufacturability.

Supply support for IPL60R095CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency resonant converters in datacenter, telecom, and electric vehicle infrastructure where soft-switching performance, thermal density, and hard-commutation reliability are critical.

FAQ

What is the maximum recommended gate resistor value for IPL60R095CFD7AUMA1 in a 300 kHz LLC design?

The datasheet specifies 5.3 Ω gate resistor for dynamic characterization at 300 kHz. For stable ZVS operation, use 4.7–6.8 Ω with ferrite bead suppression on the gate line to dampen 100–300 MHz ringing while maintaining <127 ns t_d(off). Higher values increase switching loss; lower values risk shoot-through in paralleled configurations.

Can IPL60R095CFD7AUMA1 be paralleled without external gate damping components?

No. The datasheet explicitly recommends ferrite beads on each gate line or separate totem-pole drivers when paralleling. Without them, mismatched Q_g and layout inductance cause current imbalance and localized thermal runaway, especially above 10 A per device. Two devices require individual 600 Ω gate resistors plus 100 MHz ferrite beads.

Does the ThinPAK 8x8 package require special PCB layout considerations for thermal performance?

Yes. The exposed drain pad must connect to ≥6 cm² of 70 µm copper on an internal layer, with ≥8 thermal vias (0.3 mm diameter) directly beneath the pad. Insufficient copper area raises R_thJA from 35–45 °C/W to >62 °C/W, limiting continuous current to <12 A instead of the rated 16 A at T_C = 100 °C.

How does IPL60R095CFD7AUMA1's body diode performance compare to standard silicon MOSFETs in hard-switched PFC stages?

Its 1300 A/µs diF/dt rating and 103 ns trr exceed standard 600 V MOSFETs (typically 300–600 A/µs, 250–400 ns trr). In boost PFC, this allows operation up to 120 kHz without external SiC diodes, reducing system cost while maintaining <0.5% THD at full load-validated per IEC 61000-3-2 Class C.