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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R104C7AUMA1

Name: IPL60R104C7AUMA1
Brand: Infineon Technologies
SKU: IPL60R104C7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL60R104C7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R104C7AUMA1.pdf

Description:: MOSFET N-CH 600V 20A 4VSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPL60R104C7AUMA1 from Infineon Technologies is a 600 V, 104 mΩ superjunction N-channel MOSFET in ThinPAK 8x8 SMD package with Kelvin source configuration (4-pin), designed for high-efficiency PFC and LLC resonant converters in server, telecom, and solar power supplies. It delivers 35 A continuous drain current at Tj < 150°C, 83 A pulsed current, and features R_DS(on) × E_oss and R_DS(on) × Q_g figures-of-merit optimized for hard- and soft-switching topologies.

For engineers reviewing the IPL60R104C7AUMA1 datasheet, IPL60R104C7AUMA1 pinout, IPL60R104C7AUMA1 application, or IPL60R104C7AUMA1 equivalent, this device is selected for high-density, high-frequency SMPS designs requiring dv/dt ruggedness up to 120 V/ns, low parasitic inductance, and industrial-grade reliability per JEDEC J-STD-20/JESD22.

Technical Context

This CoolMOS™ C7 transistor implements a superjunction structure enabling sub-1 Ω·mm² R_DS(on)·A performance. Its 4-pin Kelvin source layout separates power and driver source paths to minimize gate loop inductance and suppress source inductance-induced oscillation during fast switching.

The device supports both high-side and low-side configurations in bridge circuits, with validated diode commutation speed of 375 A/µs and reverse recovery charge of 4.4 µC at 400 V. Its thermal resistance R_thJC is 1.026 °C/W, enabling high-power density operation on minimal PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in 400 V AC-input PFC and 48 V–54 V telecom rectifier stages.
R_DS(on), max	104 mΩ @ T_j = 150°C - Enables 35 A continuous conduction with ≤ 127 W conduction loss at full load in thermally constrained layouts.
Q_g, typ	42 nC - Low total gate charge reduces drive power requirement and enables efficient 100–300 kHz operation with standard gate drivers.
E_oss @ 400 V	4.95 µJ - Minimizes turn-off energy loss in ZVS/ZCS resonant topologies such as LLC and phase-shifted full-bridge.
dv/dt ruggedness	120 V/ns - Ensures reliable operation under fast transient voltage stress without spurious turn-on in high-dV/dt environments.
di_F/dt	375 A/µs - Supports high-speed synchronous rectification and fast body diode commutation in bidirectional converters.
T_j max	150 °C - Qualified for industrial ambient conditions and sustained operation in sealed server PSU enclosures.

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, leadless, thermally enhanced with exposed drain pad. Dimensions: 8.0 mm × 8.0 mm × 1.0 mm. Drain pad occupies bottom center for direct thermal coupling to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal connected to driver IC output; isolated from power source path to avoid Miller-induced oscillation.
Pin 2 (Driver Source)	Reference for gate drive loop	Dedicated Kelvin source pin for gate driver return-decoupled from high-current power source to eliminate source inductance effects on switching edge control.
Pin 3 & 4 (Power Source)	Main source current path	Parallel-source terminals carrying full load current (up to 35 A continuous); routed separately from Driver Source to maintain low-inductance power loop.
Drain (exposed pad)	High-voltage output node	Thermally and electrically connected to PCB drain copper; serves as primary heat sink and high-side switch output in half-bridge configurations.

Key Features

Feature	Design Value
4-pin Kelvin source architecture	Eliminates source inductance impact on gate control, enabling clean 120 V/ns dv/dt switching without external ferrite beads in most PFC designs.
R_DS(on) × E_oss FOM	Best-in-class figure-of-merit ensures ≥0.5% full-load efficiency gain over conventional 3-pin packages at 100 kHz in 3 kW server PSUs.
Industrial qualification	JEDEC J-STD-20 (reflow) and JESD22 (reliability) certified-valid for 10+ year field life in telecom infrastructure and datacenter equipment.
Body diode dI_F/dt rating	375 A/µs enables use in high-frequency synchronous rectification and bidirectional DC–DC converters without snubber networks.
Low parasitic inductance SMD package	ThinPAK 8x8 reduces gate loop inductance by >50% vs. TO-220, simplifying EMI filter design and improving layout reproducibility across production batches.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or asymmetric half-bridge PFC stage in 3 kW redundant AC–DC power modules for cloud servers.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling input current shaping and bulk capacitor charging.

Use Value: 104 mΩ R_DS(on) and 42 nC Q_g enable >96.5% efficiency at 230 V AC input, reducing thermal derating and fan power consumption.

Use Scenario: High-frequency LLC resonant converter in 48 V telecom rectifier systems operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Upper-leg switch in full-bridge LLC primary, synchronized to zero-voltage switching transitions.

Use Value: 120 V/ns dv/dt ruggedness prevents false turn-on during rapid bus voltage transitions, eliminating need for active gate clamping.

Solar Inverter DC–DC Stage

UPS High-Efficiency Inverter

Use Scenario: Isolated DC–DC boost stage in string inverters converting 600–1000 V PV array output to 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology managing galvanic isolation and voltage step-up.

Use Value: 375 A/µs diode commutation speed supports fast freewheeling during dead-time, minimizing conduction loss in bidirectional energy transfer.

Use Scenario: Output H-bridge in online double-conversion UPS delivering pure sine-wave 230 V AC from 400 V DC bus.

IC Role / Device Role / Timing Role: Low-loss switching element in high-frequency PWM inverter stage with active harmonic filtering.

Use Value: 1.026 °C/W R_thJC allows 35 A continuous operation on 6 cm² copper without heatsink-reducing system volume by 22% vs. TO-247 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	R_DS(on) = 99 mΩ (lower), Q_g = 45 nC (higher), same ThinPAK 8x8 package and Kelvin source.	Better conduction loss but marginally higher switching loss; suited for lower-frequency (<150 kHz) PFC where thermal headroom is limited.	Select when prioritizing full-load efficiency over light-load performance and board space is not constrained.
STP60N10F6	100 V device, TO-220 package, no Kelvin source, R_DS(on) = 10.5 mΩ, Q_g = 35 nC - not voltage-compatible.	Not a functional substitute: lacks 600 V rating, SMD form factor, and dv/dt ruggedness required for PFC/LLC primary side.	Reject for any application requiring >400 V blocking capability or surface-mount assembly.

Compared with IPW60R099C7, IPL60R104C7AUMA1 trades 5 mΩ higher R_DS(on) for 3 nC lower Q_g, yielding superior light-load efficiency and easier gate drive design; versus STP60N10F6, it is not interchangeable due to fundamental voltage and package incompatibility.

Availability

IPL60R104C7AUMA1 is available at Aetrix Electronics and suitable for server power supply design, telecom rectifier development, and solar inverter DC–DC stage prototyping requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPL60R104C7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure supporting automotive, industrial, and energy markets.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC–DC and DC–DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 200 kHz?

A gate resistor of 5.3 Ω is specified in the datasheet test condition for dynamic characterization at 200 kHz. For robust operation, use 4.7–6.8 Ω with a 12 V gate drive to balance switching speed (td(on)/td(off) ≈ 12 ns/48 ns) and ringing suppression. Higher values increase turn-off delay and reduce dv/dt stress but degrade efficiency.

Can IPL60R104C7AUMA1 be paralleled with identical units without gate resistors?

No. Parallel operation requires individual gate resistors (≥10 Ω) and ferrite beads on each gate line to suppress oscillation caused by mismatched layout inductance. The datasheet explicitly recommends separate totem-pole drivers or gate ferrites for multi-device configurations to ensure current sharing stability.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes-the body diode is characterized for diF/dt = 375 A/µs and Q_rr = 4.4 µC at 400 V, making it viable for controlled synchronous rectification in LLC secondary-side designs. However, external Schottky diodes or dedicated SR controllers are preferred for >97% efficiency targets due to lower V_SD (0.9 V typ).

Does the ThinPAK 8x8 package require special PCB layout rules beyond standard SMD guidelines?

Yes. The exposed drain pad must be connected to ≥6 cm² of 70 µm-thick copper on an FR4 PCB, with thermal vias (≥8×0.3 mm) beneath the pad to inner ground planes. Power Source pins (3 & 4) require ≥0.5 mm trace width; Driver Source (Pin 2) must be routed as a short, low-inductance trace directly to the gate driver IC ground reference.

IPL60R104C7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 104mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 490µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1819 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 122W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL60R104C7AUMA1 FAQ

1.How can I place an order for IPL60R104C7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R104C7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R104C7AUMA1 reliable?

The price and inventory of IPL60R104C7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R104C7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R104C7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R104C7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R104C7AUMA1?

IPL60R104C7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R104C7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R104C7AUMA1?

For technical support, including IPL60R104C7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R104C7AUMA1 requirements.

6.How does Aetrix verify that IPL60R104C7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R104C7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R104C7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R104C7AUMA1?

All IPL60R104C7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R104C7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R104C7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R104C7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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