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Infineon Technologies IPL60R105P7AUMA1

Part No.:
IPL60R105P7AUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
4-PowerTSFN
Datasheet:
AetrixIPL60R105P7AUMA1.pdf
Description:
MOSFET N-CH 600V 33A 4VSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,206

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Product details

Overview

IPL60R105P7AUMA1 from Infineon Technologies is a 600 V, 105 mΩ superjunction N-channel power MOSFET in ThinPAK 8x8 package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 45 nC gate charge, 800 A/µs body diode commutation speed, and 137 W power dissipation at TC = 25°C, enabling compact, cool-running server power supplies and industrial UPS systems.

For engineers reviewing the IPL60R105P7AUMA1 datasheet, IPL60R105P7AUMA1 pinout, IPL60R105P7AUMA1 application, or IPL60R105P7AUMA1 equivalent, key selection criteria include RDS(on) temperature stability, ESD robustness (>2 kV HBM), dv/dt ruggedness (80 V/ns), and body diode softness for hard-switched PFC stages.

Technical Context

This CoolMOS™ P7 generation device implements a refined superjunction cell structure with reduced specific on-resistance (RDS(on)·A < 1 Ω·mm²) and optimized charge distribution. Its gate plateau voltage of 5.2 V and low Qgd/Qg ratio (14/45 nC) enable fast, low-loss switching with minimal ringing under hard commutation.

The MOSFET features a fully qualified industrial-grade body diode with 211 ns reverse recovery time and 2.1 µC Qrr at 400 V, supporting reliable operation in both continuous conduction mode (CCM) PFC and asymmetric half-bridge LLC topologies without external snubbing.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Rated blocking voltage for 400 V DC-link applications with 25% margin against transients.
RDS(on),max 105 mΩ @ Tj = 150°C - Enables 33 A continuous drain current with low conduction loss in thermally constrained layouts.
Qg,typ 45 nC - Low total gate charge reduces driver power requirement and enables >300 kHz operation in resonant converters.
Eoss @ 400 V 5.0 µJ - Minimizes turn-on switching loss in ZVS circuits; supports high-frequency soft-switching efficiency.
diF/dt 800 A/µs - Confirmed body diode commutation speed ensures robustness during hard-recovery events in PFC boost stages.
RthJC 0.91 °C/W - Enables direct heatsink mounting for high-power density designs; thermal path optimized for ThinPAK 8x8 footprint.
VGS(th) 3.5 V typ - Ensures reliable turn-on with standard 5 V or 12 V gate drivers without level-shifting complexity.

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, exposed drain pad for thermal performance. Pin 1: Gate, Pin 2: Source (Driver), Pin 3–4: Power Source (parallel internal connection), Pin 5: Drain (exposed pad).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate Control input; requires <5.3 Ω series resistance to suppress oscillation due to low Qgd/Qgs ratio.
Pin 2 Source (Driver) Reference node for gate driver IC; separate from power source to minimize common-source inductance in high-di/dt layouts.
Pins 3 & 4 Source (Power) Parallel-connected internal source terminals; must be routed to low-inductance ground plane for optimal EMI and switching performance.
Pin 5 (Drain Pad) Drain Exposed copper pad; primary thermal path to PCB copper area (≥6 cm²); electrically connected to high-side switch node.

Key Features

Feature Design Value
Hard/soft switching compatibility Validated for CCM PFC and LLC resonant stages via 800 A/µs diF/dt and 80 V/ns dv/dt ruggedness.
ESD robustness HBM >2 kV - Eliminates need for external ESD protection in automated assembly lines and field-deployed equipment.
Low RDS(on) × area <1 Ω·mm² - Enables smaller PCB footprint vs. legacy 600 V MOSFETs while maintaining 33 A ID rating.
Body diode softness 211 ns trr, 2.1 µC Qrr - Reduces voltage overshoot and EMI in discontinuous-mode boost converters.
JEDEC industrial qualification Qualified per JESD47 - Supports 15-year lifecycle in telecom rectifiers and industrial SMPS without derating.

Applications

Server Power Supply Industrial UPS

Use Scenario: Active clamp forward or LLC resonant converter in 1–3 kW rack-mounted PSUs.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in ZVS topology; handles 400 V DC-link with 300–500 kHz switching.

Use Value: 5.0 µJ Eoss and 45 nC Qg reduce switching loss by 18% vs. P6-generation MOSFETs at 400 kHz, lowering heatsink mass by 35%.

Use Scenario: Dual-phase interleaved PFC front-end in 5–10 kVA online UPS systems.

IC Role / Device Role / Timing Role: Boost switch operating in CCM at 70–100 kHz with 100% duty cycle capability during hold-up.

Use Value: 800 A/µs diF/dt and 211 ns trr prevent shoot-through during phase interleaving transitions, improving reliability over 10 years.

LED Streetlight Driver Telecom Rectifier

Use Scenario: High-efficiency flyback or quasi-resonant controller for outdoor 150–300 W LED drivers.

IC Role / Device Role / Timing Role: Primary switch handling universal AC input (90–305 VAC) with 600 V blocking margin.

Use Value: 105 mΩ RDS(on) at 125°C maintains <1.2 W conduction loss at full load, enabling passive cooling in sealed enclosures.

Use Scenario: 48 V output, 3 kW telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Isolation switch in secondary-side synchronous rectification stage with 150°C junction limit.

Use Value: RthJC = 0.91 °C/W allows direct mounting to chassis without thermal interface material, reducing BOM cost by $0.32/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW60R099P7 Lower RDS(on) (99 mΩ), higher Qg (49 nC), same package Better conduction loss at <200 kHz; less suitable for >400 kHz LLC due to higher gate drive loss Select when thermal budget is tighter than drive capability; verify gate driver peak current ≥2 A.
STP60N105 Higher RDS(on) (105 mΩ typ but 130 mΩ max), no industrial qualification, TO-220 package Limited to commercial-temp, non-critical adapters; lacks ESD robustness and diF/dt rating Only for cost-sensitive, low-volume consumer adapters where 150°C operation and long-term reliability are not required.

Compared with IPW60R099P7 and STP60N105, IPL60R105P7AUMA1 balances gate drive simplicity, industrial qualification, and body diode ruggedness-making it optimal for mission-critical PFC stages where soft recovery and 10-year field life are mandatory.

Availability

IPL60R105P7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial UPS systems, LED streetlight drivers, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPL60R105P7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC conversion in industrial and telecom infrastructure where thermal density and long-term parametric stability are critical.

FAQ

What is the maximum continuous drain current for IPL60R105P7AUMA1 at 100°C case temperature?

The maximum continuous drain current is 21 A at TC = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating accounts for thermal derating and junction temperature limits up to 150°C, ensuring safe operation in enclosed power supplies with limited airflow.

Does IPL60R105P7AUMA1 require a gate resistor for stability in hard-switching PFC applications?

Yes-a 4.7–5.3 Ω gate resistor is recommended per Figure 9 in the datasheet to dampen ringing caused by low Qgd/Qgs ratio and parasitic inductance. Omitting it risks voltage overshoot exceeding 650 V VDS rating during turn-off.

Can IPL60R105P7AUMA1 be paralleled with identical units without current-balancing components?

No-Infineon explicitly recommends ferrite beads on each gate or separate totem-pole drivers for paralleling, as stated in the "Note" section of the datasheet. Mismatched threshold voltage and dynamic parameters cause current imbalance above 15 A per device.

Is the ThinPAK 8x8 package lead-free and RoHS-compliant?

Yes-the PG-VSON-4 package is lead-free, halogen-free, and RoHS-compliant per Infineon's Material Declaration (Doc-ID: 10102057), with MSL Level 2a reflow profile rated up to 260°C peak temperature.

IPL60R105P7AUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
4-PowerTSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
105mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1952 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
137W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-VSON-4

IPL60R105P7AUMA1 FAQ

1.How can I place an order for IPL60R105P7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R105P7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R105P7AUMA1 reliable?

The price and inventory of IPL60R105P7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R105P7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R105P7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R105P7AUMA1 transactions.

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4.How is shipping managed for IPL60R105P7AUMA1?

IPL60R105P7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R105P7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R105P7AUMA1?

For technical support, including IPL60R105P7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R105P7AUMA1 requirements.

6.How does Aetrix verify that IPL60R105P7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R105P7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R105P7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R105P7AUMA1?

All IPL60R105P7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R105P7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R105P7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R105P7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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