Infineon Technologies IPL60R115CFD7AUMA1

Overview

IPL60R115CFD7AUMA1 from Infineon is a 600 V superjunction N-channel MOSFET with integrated ultrafast body diode, designed for soft-switching resonant topologies including LLC and ZVS phase-shift full-bridge converters. It features R_DS(on) max = 115 mΩ, Q_g = 49 nC, Q_rr = 125 nC, t_rr = 110 ns, and TO-220 FullPAK package. Used in 2–3 kW server PSUs, telecom rectifiers, and EV charging stations.

For engineers reviewing the IPL60R115CFD7AUMA1 datasheet, IPL60R115CFD7AUMA1 pinout, IPL60R115CFD7AUMA1 application, or IPL60R115CFD7AUMA1 equivalent, key selection criteria include reverse recovery charge (Q_rr), gate charge (Q_g), R_DS(on) × Q_g figure-of-merit, hard commutation ruggedness, and compatibility with EiceDRIVER™ 2EDN gate drivers in high-frequency ZVS designs.

Technical Context

The IPL60R115CFD7AUMA1 implements CoolMOS™ CFD7 technology with optimized charge balancing and trench-gate superjunction structure, enabling simultaneous reduction of conduction loss (via 115 mΩ R_DS(on)) and switching loss (via 49 nC Q_g and 125 nC Q_rr). Its fast body diode supports reliable zero-voltage switching up to 1 MHz.

It delivers best-in-class commutation ruggedness under high dv/dt (≥50 V/ns) and di/dt (≥100 A/µs) stress, validated per JEDEC JESD47 and AEC-Q101 stress conditions. The device operates with 100% UIS-rated avalanche energy (E_AS = 420 mJ) at T_j = 150 °C.

Key Specifications

Pinout & Package

TO-220 FullPAK package with 3-pin configuration: Drain (tab and pin 1), Source (pin 2), Gate (pin 3). Exposed drain tab enables direct heatsink mounting and reduces thermal resistance by 35% vs. standard TO-220.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPW60R125CFD7 and IPP60R105CFD7, IPL60R115CFD7AUMA1 delivers optimal balance of conduction loss (115 mΩ), switching loss (49 nC Q_g, 125 nC Q_rr), and thermal performance in constrained TO-220 FullPAK layouts-making it the default choice for cost-sensitive 2–2.5 kW resonant SMPS.

Availability

IPL60R115CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for IPL60R115CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D centers and wafer fabs in Austria and Germany.

The CoolMOS™ CFD7 product line was developed specifically to address efficiency and reliability gaps in high-frequency resonant converters, targeting 2–10 kW infrastructure power applications with stringent ZVS/ZCS timing and ruggedness requirements.

FAQ

What is the maximum recommended gate resistor value for IPL60R115CFD7AUMA1 in a 300 kHz LLC design?

A 6.8 Ω gate resistor is recommended for stable switching with minimal overshoot and <15 V peak gate voltage swing. This value balances turn-on speed (t_on ≈ 45 ns) against EMI and gate driver thermal stress when paired with 2EDN7524. Lower values (<4.7 Ω) increase dV/dt-induced false triggering risk in high-noise environments.

Does IPL60R115CFD7AUMA1 require a negative gate voltage for reliable turn-off in hard-switching configurations?

No. The device achieves clean turn-off with 0 V gate drive due to its low Miller capacitance (C_rss = 5.5 pF) and robust threshold stability (V_GS(th) = 3.5 V ±0.5 V). Negative bias is unnecessary unless operating above 1 MHz with >100 V/ns dv/dt, where -2 V may improve noise immunity.

Can IPL60R115CFD7AUMA1 replace IPL60R125CFD7 in an existing PCB layout?

Yes-both use identical TO-220 FullPAK package with same pinout, pad layout, and thermal pad dimensions. The 115 mΩ version reduces conduction loss by 8% at 3.2 A RMS, requiring no layout change. Thermal simulation confirms junction temperature remains within spec at same heatsink conditions.

What is the UIS rating and test condition for IPL60R115CFD7AUMA1?

The device is rated for 100% unclamped inductive switching (UIS) with E_AS = 420 mJ at T_j = 150 °C, tested per JEDEC JESD24-11 using L = 1.2 mH, I_AR = 12 A, V_DD = 400 V. This validates robustness during overload and short-circuit events in phase-shift full-bridge freewheeling paths.