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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R125C7AUMA1

Name: IPL60R125C7AUMA1
Brand: Infineon Technologies
SKU: IPL60R125C7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL60R125C7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R125C7AUMA1.pdf

Description:: MOSFET N-CH 600V 17A 4VSON

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Product details

Overview

IPL60R125C7AUMA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in ThinPAK 8x8 SMD package, featuring 125 mΩ max R_DS(on), 34 nC typical gate charge, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency primary-side switch in hard- and soft-switching SMPS topologies including PFC and LLC resonant converters for server, telecom, and solar inverters.

For engineers reviewing the IPL60R125C7AUMA1 datasheet, IPL60R125C7AUMA1 pinout, IPL60R125C7AUMA1 application, or IPL60R125C7AUMA1 equivalent, key selection criteria include its Kelvin-source 4-pin layout for reduced gate loop inductance, industry-grade JEDEC qualification, and best-in-class R_DS(on)×E_oss figure-of-merit enabling >0.5% full-load efficiency gain at 100 kHz versus conventional 3-pin packages.

Technical Context

This CoolMOS™ C7 device implements a superjunction cell structure optimized for high-voltage switching with low conduction and switching losses. Its 4-pin Kelvin source configuration separates driver and power return paths to suppress source inductance-induced oscillation during fast switching.

The MOSFET delivers 66 A pulsed drain current and supports 380 A/µs body diode commutation speed, making it suitable for high-frequency, high-power-density designs where dv/dt immunity and reverse recovery performance are critical in PFC and half/full-bridge PWM stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for primary-side operation in 400 V DC-link SMPS
R_DS(on),max	125 mΩ @ T_j = 150°C - enables 30 A continuous conduction at industrial temperature limits
Q_g,typ	34 nC @ V_GS = 0–10 V - determines gate drive power and switching speed in 100 kHz+ applications
E_oss@400V	4 µJ - low output energy capacitance reduces turn-off loss in hard-switched PFC
dv/dt ruggedness	120 V/ns - ensures reliable operation under fast voltage transients without spurious turn-on
di_F/dt	380 A/µs - supports fast body diode commutation in resonant LLC synchronous rectification
T_j max	150 °C - qualified for industrial ambient conditions per JEDEC J-STD-20

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, leadless, thermally enhanced with exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal for PWM signal; isolated from power return path
Pin 2 (Driver Source)	Reference for gate driver	Kelvin connection to driver IC ground-minimizes gate loop inductance and overshoot
Pins 3 & 4 (Power Source)	Main source return	High-current source path to PCB ground plane; separate from driver reference
Drain (exposed pad)	High-voltage output node	Thermally and electrically connected to PCB copper area for heat dissipation and low-inductance routing

Key Features

Feature	Design Value
4-pin Kelvin source	Eliminates source inductance coupling between gate driver and power loop, enabling stable 120 V/ns switching
R_DS(on) × E_oss FOM	Best-in-class figure-of-merit ensures lowest combined conduction and switching loss at 100 kHz
Industrial qualification	JEDEC J-STD-20 reflow compatible and JESD22-A108 temperature cycling qualified
Body diode dI/dt rating	380 A/µs supports zero-voltage switching in LLC secondary-side synchronous rectification

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant ATX server PSU with interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switching element in boost PFC stage and resonant half-bridge LLC primary.

Use Value: Enables >96% full-load efficiency at 100 kHz due to low R_DS(on) × Q_g and 120 V/ns dv/dt margin suppressing false triggering.

Use Scenario: Front-end AC/DC converter in -48 V telecom rectifier with active clamp forward and synchronous rectification.

IC Role / Device Role / Timing Role: Main switch in active clamp forward primary, operating at 200 kHz with ZVS.

Use Value: Delivers 0.5% higher system efficiency vs legacy 3-pin MOSFETs by reducing E_oss-related turn-off loss and improving gate control fidelity.

Solar String Inverter

UPS Inverter Stage

Use Scenario: DC-link switch in 10 kW three-phase string inverter with dual boost + three-level NPC topology.

IC Role / Device Role / Timing Role: High-voltage switch in boost stage handling 1000 V DC input and 15 kHz switching.

Use Value: Withstands 650 V V_DS derating margin and 380 A/µs diode commutation for reliable MPPT tracking under partial shading.

Use Scenario: H-bridge in online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter with unidirectional conduction and freewheeling duty.

Use Value: Supports 66 A pulsed current and 78 mJ single-pulse avalanche energy for short-circuit robustness during grid fault recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	Lower R_DS(on) (99 mΩ), higher Q_g (45 nC), same package	Better conduction loss but higher gate drive demand; requires stronger driver	Select when thermal budget is tighter than drive capability constraints
IPP60R125C7	TO-220FP through-hole package, identical R_DS(on) and Q_g	No Kelvin source; higher parasitic inductance limits dv/dt performance to 80 V/ns	Select for cost-sensitive, lower-frequency (<50 kHz) industrial PSUs where SMT assembly is not required

Compared with IPW60R099C7 and IPP60R125C7, IPL60R125C7AUMA1 uniquely balances low R_DS(on), low Q_g, and Kelvin-source layout-making it optimal for high-frequency, high-density server and telecom SMPS where gate loop integrity and efficiency are co-critical.

Availability

IPL60R125C7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar string inverters, and UPS inverter stages requiring stable component supply, JEDEC-qualified reliability, and high-frequency switching performance.

Supply support for IPL60R125C7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial chips, with global R&D and manufacturing infrastructure.

The CoolMOS™ C7 series was engineered specifically for high-efficiency, high-power-density switched-mode power supplies in datacenter, telecom, and renewable energy systems-emphasizing low-loss superjunction architecture and SMD-optimized packaging.

FAQ

What is the maximum continuous drain current for IPL60R125C7AUMA1 at 100°C case temperature?

The maximum continuous drain current is 12 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating reflects thermal derating from the 17 A value at 25°C case temperature and accounts for junction-to-case thermal resistance of 1.216 °C/W under defined PCB cooling conditions.

Does IPL60R125C7AUMA1 support paralleling, and what layout guidance applies?

Yes, paralleling is supported, but Infineon recommends using ferrite beads on individual gate lines or dedicated totem-pole drivers to balance dynamic current sharing. The Kelvin-source layout helps mitigate gate oscillation, but mismatched PCB trace inductance remains a key risk-symmetrical layout and matched gate resistors are mandatory.

How does the body diode performance compare to standard silicon MOSFETs?

This device achieves 380 A/µs diode commutation speed and 310 ns reverse recovery time at 400 V, significantly exceeding standard 600 V MOSFETs. Its optimized body diode supports ZVS in LLC secondaries and reduces snubber losses in PFC boost diodes-verified in application notes AN2017-05 and AP3202.

Is IPL60R125C7AUMA1 RoHS and REACH compliant?

Yes, IPL60R125C7AUMA1 complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Infineon's material declaration document 2022-0317-01. Lead-free reflow profile follows JEDEC J-STD-020D, peak temperature 260°C for MSL2a.

IPL60R125C7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 103W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL60R125C7AUMA1 FAQ

1.How can I place an order for IPL60R125C7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R125C7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R125C7AUMA1 reliable?

The price and inventory of IPL60R125C7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R125C7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R125C7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R125C7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R125C7AUMA1?

IPL60R125C7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R125C7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R125C7AUMA1?

For technical support, including IPL60R125C7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R125C7AUMA1 requirements.

6.How does Aetrix verify that IPL60R125C7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R125C7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R125C7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R125C7AUMA1?

All IPL60R125C7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R125C7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R125C7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R125C7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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