Infineon Technologies IPL60R125P7AUMA1

Overview

IPL60R125P7AUMA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in ThinPAK 8x8 package, featuring R_DS(on) = 125 mΩ (max), Q_g = 36 nC (typ), and 800 A/µs body diode commutation speed. It serves as a high-efficiency primary-side switch in hard- and resonant-mode SMPS for server PSUs and telecom rectifiers.

For engineers reviewing the IPL60R125P7AUMA1 datasheet, IPL60R125P7AUMA1 pinout, IPL60R125P7AUMA1 application, or IPL60R125P7AUMA1 equivalent, key selection criteria include its low E_oss (4.0 µJ @ 400 V), robust dv/dt ruggedness (80 V/ns), and JEDEC-qualified industrial temperature range (−40 °C to 150 °C).

Technical Context

This CoolMOS™ P7 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its gate plateau voltage is 5.2 V, and it delivers 78 A pulsed drain current with 1.13 °C/W junction-to-case thermal resistance.

The MOSFET supports both hard-switched PFC and LLC resonant topologies due to its 800 A/µs body diode diF/dt rating and low ringing tendency. Its 2 kV HBM ESD rating and 650 V V_DS absolute maximum rating ensure reliability in high-noise industrial environments.

Key Specifications

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, exposed drain pad for thermal performance. Pin 1: Gate; Pin 2: Driver Source; Pins 3–4: Power Source; Pin 5: Drain (exposed pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW60R099P7 and STP60N120, IPL60R125P7AUMA1 offers optimal balance of switching speed (7 ns rise time), body diode ruggedness (800 A/µs), and thermal efficiency (1.13 °C/W) for compact, high-frequency SMPS where layout area and EMI are critical constraints.

Availability

IPL60R125P7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and industrial UPS systems requiring stable component supply and long-term lifecycle support.

Supply support for IPL60R125P7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ P7 series targets high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems, emphasizing reduced system size, simplified thermal design, and robust operation under hard commutation stress.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPL60R125P7AUMA1 supports 17 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating assumes proper PCB copper area (6 cm²) and vertical mounting without forced airflow. Derating follows the P_tot vs. T_C curve in Diagram 1.

Is gate resistor selection required for stable operation in LLC resonant converters?

No external gate resistor is strictly required due to the device's low ringing tendency and 7 Ω internal gate resistance. However, a 5.3 Ω resistor is used in the datasheet's switching time test circuit (Table 9) to standardize measurement conditions and dampen potential oscillation in high-dV/dt layouts.

Can this MOSFET be paralleled for higher current capacity?

Yes, but Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress gate oscillation and ensure current sharing. The device's positive R_DS(on) temperature coefficient aids thermal stability during parallel operation.

Does the ThinPAK 8x8 package require special soldering profile considerations?

Yes - the package is MSL2a compliant and rated for peak reflow temperature of 260 °C. Recommended profile follows IPC-J-STD-020; preheat ramp rate ≤3 °C/s, time above 217 °C ≤60 s, and peak temperature held for 10–30 s to ensure void-free solder joint formation on the exposed drain pad.