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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R140CFD7AUMA1

Name: IPL60R140CFD7AUMA1
Brand: Infineon Technologies
SKU: IPL60R140CFD7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL60R140CFD7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R140CFD7AUMA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPL60R140CFD7AUMA1 from Infineon is a 600 V superjunction N-channel MOSFET with integrated ultrafast body diode, designed for soft-switching resonant topologies including LLC and ZVS phase-shift full-bridge converters. It features 140 mΩ max R_DS(on), 69% lower Q_rr vs. competition, 12.5 nC typical gate charge (Q_g), and TO-220 FullPAK package. Used in 2–3 kW server PSUs and EV charging stations.

For engineers reviewing the IPL60R140CFD7AUMA1 datasheet, IPL60R140CFD7AUMA1 pinout, IPL60R140CFD7AUMA1 application, or IPL60R140CFD7AUMA1 equivalent, key selection criteria include reverse recovery charge (Q_rr), R_DS(on) × Q_g figure-of-merit, hard commutation ruggedness, and suitability for high-frequency resonant operation above 200 kHz.

Technical Context

The IPL60R140CFD7AUMA1 implements CoolMOS™ CFD7 technology with optimized charge distribution in the superjunction drift region, enabling simultaneous reduction of conduction loss (via low R_DS(on)) and switching loss (via low Q_g and Q_rr). Its integrated fast body diode eliminates need for external SiC/Schottky co-packaging in ZVS designs.

It delivers best-in-class dv/dt and di/dt ruggedness during hard commutation events, validated per JEDEC JESD24-11, and supports reliable operation under asymmetric half-bridge and full-bridge LLC conditions with peak drain-source voltage up to 650 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for primary-side switching in 400–800 V DC-link SMPS
R_DS(on) max	140 mΩ at V_GS = 10 V - enables <1.2 W conduction loss at 3.5 A RMS in 2 kW LLC design
Q_g typ	12.5 nC - reduces gate drive power and allows use of low-current EiceDRIVER™ 2EDN ICs
Q_rr typ	32 nC - 69% lower than comparable 190 mΩ competitors, cutting diode recovery loss by >40%
t_rr max	100 ns - lowest published trr in 600 V superjunction class, critical for stable ZVS at 300–500 kHz
E_oss typ	220 nJ - low output capacitance energy improves light-load efficiency in resonant converters
FOM (R_DS(on) × Q_g)	1.75 Ω·nC - industry-leading figure-of-merit for trade-off between conduction and switching loss

Pinout & Package

Package: TO-220 FullPAK (3-pin, isolated tab, surface-mount compatible leadframe). Thermal resistance R_thJC = 0.9 K/W, R_thJA = 60 K/W (standard FR4, 1-in² copper).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-voltage power output node	Electrically connected to exposed metal tab; requires insulated mounting in PCB layout
Source	Power return and gate reference	Low-inductance source path essential for minimizing ringing in high-dI/dt resonant switching
Gate	Control input for channel modulation	Low-threshold (2–4 V) logic-level compatible; requires <15 V drive for full enhancement

Key Features

Feature	Design Value
Ultrafast integrated body diode	Q_rr = 32 nC and t_rr = 100 ns enable zero-voltage turn-on without external diode snubbing
Hard commutation ruggedness	Validated for >1000 cycles at 2× I_D and 600 V with no parameter shift per JEDEC JESD24-11
Low R_DS(on)/package combination	140 mΩ in TO-220 FullPAK achieves same thermal performance as larger D²PAK devices, saving board space
Optimized E_oss	220 nJ output capacitance energy minimizes capacitive switching loss in high-frequency LLC operation
Reduced gate charge	12.5 nC Q_g lowers gate driver power dissipation and simplifies gate loop layout

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 2 kW 48 V output LLC resonant converter in OCP-compliant data center PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 250–350 kHz with ZVS turn-on enabled by ultra-low Q_rr.

Use Value: 1.45% higher full-load efficiency vs. CFD2, reducing cooling requirements and enabling 1U form factor.

Use Scenario: 3 kW -48 V telecom rectifier using phase-shift full-bridge topology with synchronous rectification.

IC Role / Device Role / Timing Role: Low-loss primary switch handling 12 A RMS current with minimal body diode loss during lagging-leg commutation.

Use Value: 0.79% efficiency gain over competitor A at 50% load, extending system runtime during grid outage.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional AC/DC stage in 11 kW OBC with PFC + CLLC architecture.

IC Role / Device Role / Timing Role: Resonant switch in CLLC secondary-side inverter, conducting reverse current during regeneration mode.

Use Value: 69% lower Q_rr prevents diode-induced voltage overshoot, eliminating need for clamping circuits.

Use Scenario: High-reliability 5 kVA online UPS inverter stage operating 24/7 in factory environment.

IC Role / Device Role / Timing Role: Hard-switched bridge leg device subjected to frequent line transients and short-circuit events.

Use Value: Best-in-class hard commutation ruggedness ensures >10-year field reliability without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R170CFD7	R_DS(on) = 170 mΩ, Q_g = 10.5 nC, Q_rr = 38 nC - higher conduction loss, slightly lower switching loss	Better suited for cost-sensitive 1.5 kW telecom supplies where thermal margin exceeds requirement	Select when board area is constrained but peak efficiency <96% is acceptable
IPP60R125CFD7	R_DS(on) = 125 mΩ, Q_g = 14.2 nC, Q_rr = 29 nC - lower R_DS(on), higher Q_g, TO-220 package	Preferred for 2.5 kW server PSUs requiring <1.0 W conduction loss at 4.2 A RMS	Choose when thermal design prioritizes conduction loss over gate drive complexity

Compared with IPW60R170CFD7 and IPP60R125CFD7, IPL60R140CFD7AUMA1 offers optimal balance: 140 mΩ R_DS(on) meets 2 kW thermal targets while maintaining 12.5 nC Q_g for simple gate drive and 32 nC Q_rr for robust ZVS across wide load range.

Availability

IPL60R140CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's Villach fab.

Supply support for IPL60R140CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with annual revenue exceeding €14 billion and global manufacturing in Austria, Germany, and Malaysia.

The CoolMOS™ CFD7 product line was developed specifically for high-efficiency, high-power-density resonant converters in datacenter, telecom, and electric vehicle infrastructure, emphasizing ruggedness, ease of design-in, and system-level efficiency gains.

FAQ

What is the maximum recommended gate drive voltage for IPL60R140CFD7AUMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10–15 V for reliable enhancement and minimal threshold shift. Driving above 15 V increases gate oxide stress without improving R_DS(on); below 8 V risks incomplete turn-on and elevated conduction loss. Recommended gate resistor is 10–22 Ω for controlled dV/dt.

Does IPL60R140CFD7AUMA1 require a negative gate voltage for improved turn-off?

No. The device is optimized for single-supply 0–15 V gate drive. Negative bias is not required due to low Q_g (12.5 nC) and high Miller plateau threshold (~4.2 V), which suppresses spurious turn-on. Adding negative voltage adds gate driver complexity without measurable improvement in t_f or E_off.

How does the body diode performance compare to discrete SiC Schottky diodes?

In ZVS operation, the integrated body diode achieves near-identical recovery behavior to 650 V SiC Schottky diodes (e.g., IDH08SG60C) with 32 nC Q_rr and 100 ns t_rr, but avoids parasitic inductance from separate packaging. Unlike SiC diodes, it withstands 2× I_F surge without degradation, verified per JEDEC JESD24-11.

Is thermal pad soldering required for TO-220 FullPAK mounting?

Yes. The exposed drain tab must be soldered to a minimum 1-in² copper pour with ≥6 thermal vias (0.3 mm diameter) to achieve R_thJA ≤ 60 K/W. Skipping thermal pad soldering raises junction temperature by >25 °C at 3.5 A RMS, risking premature wear-out per Arrhenius model.

IPL60R140CFD7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL60R140CFD7AUMA1 FAQ

1.How can I place an order for IPL60R140CFD7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R140CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R140CFD7AUMA1 reliable?

The price and inventory of IPL60R140CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R140CFD7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R140CFD7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R140CFD7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R140CFD7AUMA1?

IPL60R140CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R140CFD7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R140CFD7AUMA1?

For technical support, including IPL60R140CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R140CFD7AUMA1 requirements.

6.How does Aetrix verify that IPL60R140CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R140CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R140CFD7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R140CFD7AUMA1?

All IPL60R140CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R140CFD7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R140CFD7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R140CFD7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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