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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R160CFD7AUMA1

Name: IPL60R160CFD7AUMA1
Brand: Infineon Technologies
SKU: IPL60R160CFD7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL60R160CFD7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R160CFD7AUMA1.pdf

Description:: MOSFET N CH

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPL60R160CFD7AUMA1 from Infineon Technologies is a 600 V, 160 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction power MOSFET in ThinPAK 8x8 package, featuring 31 nC gate charge, 0.45–0.9 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness. It is optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters in server PSUs and EV charging systems.

For engineers reviewing the IPL60R160CFD7AUMA1 datasheet, IPL60R160CFD7AUMA1 pinout, IPL60R160CFD7AUMA1 application, or IPL60R160CFD7AUMA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in SMD), hard commutation robustness, Qrr performance at 400 V, and thermal resistance of 1.32 °C/W (junction-to-case).

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge balancing for reduced Eoss (3.6 µJ at 400 V) and improved dv/dt immunity (70 V/ns for reverse diode). Its gate plateau voltage is 5.7 V, enabling stable turn-on under high-di/dt conditions.

The device integrates a fast-recovery body diode (trr = 103–153 ns, Qrr = 0.45–0.9 µC) with enhanced diF/dt ruggedness (1300 A/µs), supporting reliable hard commutation without external snubbers in asymmetric half-bridge or LLC synchronous rectification stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in 400 V bus telecom/server applications
R_DS(on),max	160 mΩ @ T_j = 150 °C - Enables low conduction loss in high-current LLC resonant tank legs
Q_g,typ	31 nC - Reduces gate drive power and enables efficient operation with standard 10 V gate drivers
Q_rr	0.45–0.9 µC @ V_R = 400 V - Minimizes switching loss and EMI during body diode commutation
E_oss	3.6 µJ @ 400 V - Low output capacitance energy improves ZVS initiation margin in phase-shifted topologies
diF/dt	1300 A/µs - Supports robust hard-switching in synchronous rectifier or freewheeling positions without oscillation
R_thJC	1.32 °C/W - Enables high-power density thermal design with direct case mounting to heatsink

Pinout & Package

ThinPAK 8x8 (PG-VSON-4) surface-mount package with exposed drain pad for thermal enhancement. Pin 1: Gate; Pin 2: Driver Source; Pins 3–4: Power Source; Pin 5: Drain (top-side thermal pad connected internally to drain).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for MOSFET channel; requires low-inductance gate loop to suppress ringing during fast dv/dt transitions
Pin 2	Driver Source	Source connection dedicated to gate driver return path-separates high-di/dt driver current from power source return
Pins 3 & 4	Power Source	Main source terminals carrying load current; paralleled for lower inductance and higher current capability
Pin 5 (Drain Pad)	Drain	Top-side thermal pad tied to drain potential; must be soldered to PCB copper pour for thermal and electrical integrity

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 103–153 ns and Qrr = 0.45–0.9 µC enable clean zero-voltage switching in LLC secondaries without tail current loss
Low R_DS(on) × Q_g FOM	2.5 Ω·nC - Best-in-class figure-of-merit for SMD high-voltage MOSFETs, optimizing combined conduction and switching loss
High diF/dt ruggedness	1300 A/µs - Allows reliable operation in hard-commutated synchronous rectifier roles without external diode clamping
Improved reverse dv/dt immunity	70 V/ns - Prevents spurious turn-on during high-speed bridge leg transitions in phase-shifted full-bridge designs

Applications

Server PSU Phase-Shift Full-Bridge

EV Onboard Charger LLC Resonant Stage

Use Scenario: Primary-side switch in 3.3 kW telecom/server PSU using phase-shifted full-bridge topology with ZVS.

IC Role / Device Role / Timing Role: High-side and low-side switching element; operates at 100–300 kHz with soft-switched turn-on.

Use Value: Low Qrr and high diF/dt ruggedness eliminate need for external anti-parallel SiC diodes while maintaining >96% efficiency at full load.

Use Scenario: Resonant tank switch in 11 kW bidirectional OBC operating in LLC mode with variable frequency control.

IC Role / Device Role / Timing Role: Primary-side power switch handling 400–800 V DC link; turns on under ZVS condition across wide load range.

Use Value: 3.6 µJ Eoss ensures reliable ZVS down to 20% load; 1.32 °C/W R_thJC supports compact heatsink integration.

Industrial Telecom Rectifier Module

High-Density 5G Base Station PSU

Use Scenario: High-efficiency AC-DC front-end rectifier module for industrial telecom infrastructure with 48 V output.

IC Role / Device Role / Timing Role: Active clamp flyback or asymmetrical half-bridge switch managing 380 V DC bus transients.

Use Value: 650 V V_DS@T_j,max provides 30% voltage margin over 400 V nominal bus; qualified per JEDEC for industrial temp range.

Use Scenario: Compact, fanless 5G remote radio unit (RRU) power supply requiring high power density and low acoustic noise.

IC Role / Device Role / Timing Role: Primary-side switch in resonant converter operating at >300 kHz with minimal EMI generation.

Use Value: Ultra-low Qrr reduces high-frequency switching loss and associated heatsink size by 35% versus prior CFD2 generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CFD7	Lower R_DS(on) (99 mΩ), higher Q_g (44 nC), same CFD7 die and package	Better conduction loss at high current; less suitable for very high-frequency (>500 kHz) operation due to gate drive demand	Select when thermal headroom is limited and switching frequency ≤ 300 kHz
IPP60R160CFD7	Same R_DS(on) and Q_g, but TO-220FP through-hole package (R_thJA = 62 °C/W vs. 35–45 °C/W for ThinPAK)	Higher thermal resistance limits power density; preferred where mechanical mounting or legacy layout constraints apply	Select when board-level reworkability or vertical heatsinking is required over SMD miniaturization

Compared with IPW60R099CFD7 and IPP60R160CFD7, IPL60R160CFD7AUMA1 delivers optimal balance of low conduction loss, manageable gate drive burden, and superior SMD thermal performance-making it ideal for space-constrained, high-efficiency resonant converters where both ZVS reliability and power density are critical.

Availability

IPL60R160CFD7AUMA1 is available at Aetrix Electronics and suitable for server PSUs, EV onboard chargers, and 5G base station power supplies requiring stable component supply, JEDEC-qualified industrial reliability, and high-volume SMD manufacturability.

Supply support for IPL60R160CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CFD7 product line-engineered specifically for soft-switching resonant topologies such as LLC and phase-shift full-bridge, targeting highest efficiency, reliability, and power density in high-voltage AC-DC conversion.

FAQ

What is the maximum continuous drain current rating for IPL60R160CFD7AUMA1 at 100°C case temperature?

The maximum continuous drain current is 10.0 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating reflects thermal limitation-not SOA or R_DS(on)-and assumes proper PCB copper area (6 cm²) and vertical mounting without forced airflow.

Does IPL60R160CFD7AUMA1 require a gate resistor for stability in ZVS applications?

Yes-a gate resistor (typically 5.3 Ω, per test conditions in Table 9) is recommended to dampen gate oscillation and control turn-on speed. For paralleling, ferrite beads on individual gate lines or separate totem-pole drivers are advised to ensure current sharing and prevent dynamic imbalance.

How does the body diode performance compare to standard silicon MOSFETs in hard commutation?

Its body diode achieves 1300 A/µs diF/dt ruggedness and 70 V/ns reverse dv/dt immunity-significantly exceeding standard SJ-MOSFETs. This allows reliable operation in hard-commutated synchronous rectifier roles without external SiC diodes or snubbers, validated per JEDEC industrial qualification.

Is IPL60R160CFD7AUMA1 RoHS-compliant and halogen-free?

Yes-the device complies with EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The "AUMA1" suffix denotes tape-and-reel packaging compliant with MSL Level 2a (260 °C peak reflow, per J-STD-020).

IPL60R160CFD7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1330 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 95W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4-1

IPL60R160CFD7AUMA1 FAQ

1.How can I place an order for IPL60R160CFD7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R160CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R160CFD7AUMA1 reliable?

The price and inventory of IPL60R160CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R160CFD7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R160CFD7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R160CFD7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R160CFD7AUMA1?

IPL60R160CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R160CFD7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R160CFD7AUMA1?

For technical support, including IPL60R160CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R160CFD7AUMA1 requirements.

6.How does Aetrix verify that IPL60R160CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R160CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R160CFD7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R160CFD7AUMA1?

All IPL60R160CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R160CFD7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R160CFD7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R160CFD7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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