Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R180P6AUMA1

Name: IPL60R180P6AUMA1
Brand: Infineon Technologies
SKU: IPL60R180P6AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPL60R180P6AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R180P6AUMA1.pdf

Description:: MOSFET N-CH 600V 22.4A 4VSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,990

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPL60R180P6AUMA1 from Infineon Technologies is a 600 V, 180 mΩ superjunction N-channel power MOSFET in ThinPAK 8x8 package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 22.4 A continuous drain current at T_C = 25°C, 44 nC total gate charge, and 5.7 µJ output energy (E_oss) at 400 V - enabling compact, cooler-running server PSUs and industrial adapters.

For engineers reviewing the IPL60R180P6AUMA1 datasheet, IPL60R180P6AUMA1 pinout, IPL60R180P6AUMA1 application, or IPL60R180P6AUMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), commutation robustness (500 A/µs diF/dt), and SMD thermal performance (R_thJC = 0.71 °C/W).

Technical Context

This CoolMOS™ P6 device implements a charge-balanced superjunction structure with optimized cell pitch and epitaxial doping to reduce both conduction and switching losses. Its low R_DS(on) × Q_g figure-of-merit (FOM) and 6.1 V gate plateau voltage enable stable, low-noise turn-on under high dv/dt conditions without external snubbing.

The integrated body diode supports fast, soft reverse recovery (t_rr = 350 ns, Q_rr = 5.3 µC) and high commutation ruggedness (diF/dt up to 500 A/µs), making it suitable for continuous conduction mode (CCM) PFC and resonant LLC topologies where diode stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated for universal-input offline SMPS primary-side switching up to 400 V DC bus with margin.
R_DS(on),max	180 mΩ at T_j = 25°C - enables <22.4 A continuous conduction with <0.9 W conduction loss at 10 A.
Q_g,typ	44 nC - low gate drive energy reduces controller IC loading and allows use of standard gate drivers (e.g., 1EDN7512B).
E_oss@400V	5.7 µJ - minimizes turn-off loss in hard-switched converters operating at 65–100 kHz.
dv/dt ruggedness	100 V/ns - withstands high transient noise in high-frequency PFC without false turn-on.
diF/dt capability	500 A/µs - supports high-current, fast-recovery operation in CCM boost and synchronous rectification.
R_thJC	0.71 °C/W - enables >150 W power dissipation with modest heatsinking in ThinPAK 8x8 surface-mount footprint.

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), thermally enhanced surface-mount package with exposed drain pad for low-inductance, high-current PCB routing and efficient heat transfer to copper plane.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring <1.7 Ω series resistance for optimal EMI and ringing control.
Pin 2 (Source)	Driver return / signal reference	Connected to driver IC ground; must be routed with minimal loop area to avoid gate oscillation.
Pins 3 & 4 (Power Source)	Main source connection	Dual-source terminals reduce package inductance and improve current sharing in high-di/dt applications.
Drain (exposed pad)	High-voltage power output	Thermally and electrically connected to PCB drain copper; requires ≥6 cm² 70 µm Cu for R_thJA = 45 °C/W.

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with R_DS(on) 30% lower than planar MOSFETs of same die size - reducing conduction loss and thermal footprint.
Enhanced dv/dt immunity	100 V/ns rating eliminates need for gate clamping or RC snubbers in noisy high-frequency PFC designs.
Optimized body diode	500 A/µs diF/dt and 350 ns t_rr allow reliable operation in discontinuous and transitional-mode boost converters.
JEDEC industrial qualification	Qualified per J-STD-020 (MSL2a) and JESD22 - supports lead-free reflow and long-term reliability in industrial ambient (−40 to +150°C).

Applications

Server Power Supply

Industrial AC-DC Adapter

Use Scenario: Primary-side switch in 80+ Titanium 3.5 kW front-end PFC stage.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost converter operating at 65 kHz.

Use Value: 180 mΩ R_DS(on) and 5.7 µJ E_oss reduce total losses by 1.2 W vs. prior-generation SJ-MOSFET, improving efficiency from 98.3% to 98.5% at full load.

Use Scenario: Main switch in 1.2 kW industrial adapter with wide input range (85–264 VAC).

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in LLC resonant half-bridge primary side.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during line transients, eliminating need for gate voltage clamping circuitry.

Telecom Rectifier

UPS Inverter Stage

Use Scenario: Input-stage switch in 48 V telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side switch handling 20 A continuous current at 380 V DC bus.

Use Value: Dual-source pins (Pins 3 & 4) reduce source inductance by 40%, suppressing voltage spikes during fast turn-off and improving EMI compliance.

Use Scenario: Low-side switch in three-phase IGBT/MOSFET hybrid inverter for 5 kVA online UPS.

IC Role / Device Role / Timing Role: Fast-switching auxiliary switch for dead-time control and shoot-through protection.

Use Value: 44 nC Q_g enables clean 150 ns turn-on delay with standard gate drivers, tightening dead-time margins without compromising efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P6	Lower R_DS(on) (99 mΩ), higher Q_g (68 nC), same 600 V rating and ThinPAK package.	Better conduction loss but higher switching loss; suited for <50 kHz fixed-frequency PFC where thermal headroom is limited.	Select when R_DS(on)-dominated loss exceeds 60% of total loss and gate drive capability permits higher Q_g.
STP60N6F6	650 V rating, 60 mΩ R_DS(on), TO-220 package, no integrated diode optimization.	Larger footprint, higher R_thJA (62 °C/W), inferior diF/dt (200 A/µs); requires external freewheeling diode in PFC.	Choose only for legacy through-hole designs where board rework is prohibitive and efficiency targets are relaxed.

Compared with IPW60R099P6, IPL60R180P6AUMA1 trades 91 mΩ lower R_DS(on) for 24 nC lower Q_g and better thermal resistance - favoring medium-frequency, gate-drive-constrained designs. Versus STP60N6F6, it delivers superior SMD integration, diode ruggedness, and thermal performance despite identical voltage class.

Availability

IPL60R180P6AUMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifiers requiring stable component supply, JEDEC-qualified reliability, and high-volume SMD manufacturability.

Supply support for IPL60R180P6AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with over 30 years of high-voltage power device innovation.

This part belongs to the CoolMOS™ P6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current for IPL60R180P6AUMA1 at 100°C case temperature?

The maximum continuous drain current is 14.1 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This value is thermally limited by junction temperature (T_j ≤ 150°C) and assumes proper PCB copper area (6 cm²) and vertical mounting without forced airflow.

Does IPL60R180P6AUMA1 require a negative gate voltage for safe turn-off?

No - the device is fully compatible with 0 V to +15 V gate drive. Its gate threshold voltage (V_GS(th)) ranges from 3.5 V to 4.5 V, and it tolerates −20 V static and −30 V dynamic gate-source voltage, allowing simple unipolar gate drivers without negative bias circuitry.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves 500 A/µs diF/dt and 350 ns t_rr - double the commutation speed and 40% faster recovery than typical planar MOSFETs. This is enabled by tailored lifetime control and optimized carrier distribution in the superjunction drift region.

Can IPL60R180P6AUMA1 be used in synchronous rectification configurations?

Yes - its low R_DS(on) and fast, soft-recovery body diode make it suitable as a synchronous rectifier in secondary-side LLC or flyback converters up to 150 kHz, provided gate drive timing avoids shoot-through and layout minimizes source inductance.

IPL60R180P6AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P6

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 750µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2080 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 176W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL60R180P6AUMA1 FAQ

1.How can I place an order for IPL60R180P6AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R180P6AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R180P6AUMA1 reliable?

The price and inventory of IPL60R180P6AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R180P6AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R180P6AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R180P6AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R180P6AUMA1?

IPL60R180P6AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R180P6AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R180P6AUMA1?

For technical support, including IPL60R180P6AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R180P6AUMA1 requirements.

6.How does Aetrix verify that IPL60R180P6AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R180P6AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R180P6AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R180P6AUMA1?

All IPL60R180P6AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R180P6AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R180P6AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R180P6AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …