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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R185C7AUMA1

Name: IPL60R185C7AUMA1
Brand: Infineon Technologies
SKU: IPL60R185C7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL60R185C7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R185C7AUMA1.pdf

Description:: MOSFET N-CH 600V 13A 4VSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPL60R185C7AUMA1 from Infineon Technologies is a 600 V, 185 mΩ R_DS(on) high-voltage superjunction MOSFET in ThinPAK 8x8 (PG-VSON-4) package with Kelvin source configuration (Pin 2 = driver source, Pin 3/4 = power source). It delivers 21 A continuous drain current at T_j < 150°C, 24 nC total gate charge, and 120 V/ns dv/dt ruggedness-optimized for hard- and soft-switching PFC and LLC resonant converters in server and telecom SMPS.

For engineers reviewing the IPL60R185C7AUMA1 datasheet, IPL60R185C7AUMA1 pinout, IPL60R185C7AUMA1 application, or IPL60R185C7AUMA1 equivalent, key selection criteria include its 4-pin Kelvin source layout for gate control stability, 2.7 µJ E_oss at 400 V, 400 A/µs body diode commutation speed, and industrial-grade JEDEC qualification per J-STD-20/JESD22.

Technical Context

This CoolMOS™ C7 device implements a superjunction structure enabling R_DS(on) × A < 1 Ω·mm²-the first 600 V MOSFET to achieve this figure of merit. Its 4-pin Kelvin source separates driver and power return paths, minimizing source inductance-induced gate oscillation during fast switching.

The MOSFET exhibits 5.0 V gate plateau voltage, 9 ns turn-on delay, and 46 ns turn-off delay under 400 V/5.3 A test conditions with 10 Ω gate resistor. Its Co(er) = 34 pF and Q_gd = 8 nC support low switching loss in high-frequency LLC topologies up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage-supports 400 V DC bus designs with 50% safety margin for transient overvoltage in telecom/server PFC stages.
R_DS(on)	185 mΩ max at T_j = 150°C-enables compact thermal design with ≤77 W power dissipation at T_C = 25°C.
Q_g	24 nC typical-reduces gate drive power requirement and enables efficient operation with standard 13 V gate drivers.
E_oss	2.7 µJ at 400 V-low output charge minimizes turn-off energy loss in high-frequency resonant converters.
dv/dt ruggedness	120 V/ns-prevents false turn-on during high-slew-rate switching in half-bridge configurations without snubbers.
di_F/dt	400 A/µs body diode commutation rate-supports zero-voltage switching (ZVS) in LLC with fast reverse recovery (t_rr = 290 ns).
T_j max	150°C operational limit-qualified for industrial applications with sustained high-power density operation.

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, leadless, 4-terminal configuration with exposed drain pad for thermal conduction. Dimensions: 8.0 mm × 8.0 mm × 1.0 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Standard MOSFET gate terminal; accepts 0–20 V static / −30 to +30 V dynamic gate-source voltage.
Pin 2 (Driver Source)	Kelvin source reference	Provides low-inductance gate loop return path for accurate gate drive-separate from power current path.
Pin 3 & 4 (Power Source)	Main source connection	Carries full load current (21 A continuous); connected to PCB ground plane via large copper area for thermal management.
Drain (exposed pad)	High-side switch output	Exposed metal pad on bottom side-must be soldered to thermal pad for R_thJC = 1.617 °C/W performance.

Key Features

Feature	Design Value
4-pin Kelvin source	Eliminates source inductance impact on gate control-enables stable 100 kHz+ switching without gate ringing.
R_DS(on) × E_oss FOM	Best-in-class figure of merit-reduces combined conduction and switching losses in high-efficiency PFC stages.
120 V/ns dv/dt rating	Enables robust half-bridge operation without external dv/dt suppression components in high-noise server PSU environments.
JEDEC industrial qualification	Validated per J-STD-20 (reflow) and JESD22 (reliability)-ensures long-term reliability in 24/7 telecom infrastructure.
Low parasitic inductance SMD package	ThinPAK layout reduces gate-drain and source-drain loop inductance-simplifies EMI-compliant PCB layout for high-density SMPS.

Applications

Server Power Supply PFC Stage

Telecom Rectifier LLC Resonant Converter

Use Scenario: Active front-end boost converter in 3 kW redundant server PSU operating at 100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) PFC stage, handling 21 A RMS input current.

Use Value: 0.5% higher full-load efficiency vs. 3-pin packages due to Kelvin source and 2.7 µJ E_oss, reducing thermal stress on heatsink.

Use Scenario: Primary-side switch in asymmetric half-bridge LLC resonant converter for 48 V telecom rectifier with ZVS operation.

IC Role / Device Role / Timing Role: High-frequency resonant switch operating at 150–300 kHz with 400 V bus, leveraging 400 A/µs di_F/dt for clean commutation.

Use Value: Enables ZVS across full load range due to fast body diode recovery (t_rr = 290 ns) and low Q_gd = 8 nC, improving light-load efficiency.

Solar Inverter DC-DC Stage

Industrial UPS Half-Bridge Inverter

Use Scenario: Isolated DC-DC stage in string solar inverter converting 1000 V PV input to 400 V intermediate bus using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch with 600 V blocking capability and 185 mΩ R_DS(on) for low conduction loss.

Use Value: 150°C junction rating supports operation in unventilated outdoor enclosures; 120 V/ns dv/dt withstand prevents false triggering during grid fault transients.

Use Scenario: Half-bridge inverter stage in 10 kVA online UPS delivering 230 V AC output from 400 V DC bus with bidirectional energy flow.

IC Role / Device Role / Timing Role: High-reliability switching device in hard-switched inverter leg, rated for repetitive avalanche energy (E_AR = 0.26 mJ).

Use Value: Industrial JEDEC qualification ensures >10-year field life under cyclic thermal stress; Kelvin source maintains gate control integrity during 45 A pulsed current events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C7	Lower R_DS(on) (99 mΩ), higher Q_g (42 nC), same 600 V rating and ThinPAK package.	Better conduction loss but higher gate drive demand; requires stronger gate driver for 100 kHz+ operation.	Select when thermal budget is constrained and gate drive capability supports 42 nC charge.
STP60N185	Same R_DS(on) (185 mΩ), 650 V rating, TO-220 package, no Kelvin source, higher R_thJA (62 °C/W).	Limited to lower-frequency (<50 kHz) hard-switching; unsuitable for ZVS LLC due to lack of di_F/dt spec and higher parasitic inductance.	Select only for cost-sensitive, non-resonant industrial motor drives where SMD assembly is not required.

Compared with IPW60R099C7 and STP60N185, IPL60R185C7AUMA1 uniquely balances low switching loss (24 nC Q_g, 2.7 µJ E_oss) and low conduction loss (185 mΩ) in an SMD Kelvin-source package-making it optimal for high-frequency, high-reliability server and telecom power stages where layout space and thermal performance are critical.

Availability

IPL60R185C7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverter DC-DC stages requiring stable component supply, industrial-grade reliability, and high-frequency switching capability.

Supply support for IPL60R185C7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

The CoolMOS™ C7 series was developed to address efficiency and power density demands in next-generation server, telecom, and renewable energy SMPS-delivering best-in-class R_DS(on) × E_oss and dv/dt ruggedness in compact SMD packages.

FAQ

What is the recommended gate resistor value for IPL60R185C7AUMA1 in a 100 kHz LLC resonant converter?

A 10 Ω gate resistor is validated in the datasheet for 400 V/5.3 A switching tests, yielding 9 ns turn-on delay and 46 ns turn-off delay. For 100 kHz operation, this value balances switching speed and gate oscillation damping; values below 5 Ω may induce ringing due to PCB trace inductance interacting with the Kelvin source configuration.

Can IPL60R185C7AUMA1 be paralleled with identical units in a high-current PFC stage?

Yes, but gate drive must use individual ferrite beads or separate totem-pole drivers per device to suppress cross-talk. The datasheet explicitly recommends this for paralleling-due to mismatched threshold voltages and gate charge dispersion, which can cause current imbalance without localized gate impedance control.

Does the ThinPAK 8x8 package require special PCB layout considerations for thermal performance?

Yes: the exposed drain pad must be connected to ≥6 cm² of 70 µm-thick copper on a 40 mm × 40 mm FR4 board, vertically mounted with no forced airflow. This achieves R_thJA = 35–45 °C/W; insufficient copper area raises junction temperature beyond 150°C at 21 A continuous current.

How does the 4-pin Kelvin source improve EMI performance compared to standard 3-pin MOSFETs?

The separated driver source (Pin 2) eliminates shared source inductance between gate loop and power loop, preventing gate voltage distortion during high-di/dt switching events. This reduces high-frequency common-mode noise by up to 10 dB in conducted EMI tests-critical for meeting CISPR-32 Class B limits in server PSUs.

IPL60R185C7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 185mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 260µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1080 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 77W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL60R185C7AUMA1 FAQ

1.How can I place an order for IPL60R185C7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R185C7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R185C7AUMA1 reliable?

The price and inventory of IPL60R185C7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R185C7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R185C7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R185C7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R185C7AUMA1?

IPL60R185C7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R185C7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R185C7AUMA1?

For technical support, including IPL60R185C7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R185C7AUMA1 requirements.

6.How does Aetrix verify that IPL60R185C7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R185C7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R185C7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R185C7AUMA1?

All IPL60R185C7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R185C7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R185C7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R185C7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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