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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL60R185CFD7AUMA1

Name: IPL60R185CFD7AUMA1
Brand: Infineon Technologies
SKU: IPL60R185CFD7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL60R185CFD7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL60R185CFD7AUMA1.pdf

Description:: MOSFET N-CH 600V 14A 4VSON

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Product details

Overview

IPL60R185CFD7AUMA1 from Infineon Technologies is a 600 V, 185 mΩ ultra-fast body diode superjunction MOSFET in ThinPAK 8x8 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 28 nC typical gate charge, 0.34 µC typical reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and telecom power supplies.

For engineers reviewing the IPL60R185CFD7AUMA1 datasheet, IPL60R185CFD7AUMA1 pinout, IPL60R185CFD7AUMA1 application, or IPL60R185CFD7AUMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, fast body diode dv/dt/diF/dt robustness, and qualification for industrial applications per JEDEC47/20/22.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with optimized charge balancing for reduced Q_g and minimized E_oss, directly supporting zero-voltage switching (ZVS) operation in high-frequency resonant converters. Its ultra-fast body diode exhibits 89–134 ns reverse recovery time and 1.0 V forward voltage at 6 A, enabling reliable hard commutation without snubbers.

The MOSFET features a drain-connected thermal pad (Pin 5), gate on Pin 1, and dual-source configuration (Pins 2, 3, 4), allowing low-inductance source return paths critical for minimizing switching oscillation in ZVS circuits. Thermal resistance R_thJC is 1.47 °C/W, supporting high-power operation with minimal case temperature rise.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50 % margin for transient overvoltage in telecom/server SMPS.
R_DS(on), max	185 mΩ at T_j = 150 °C - enables low conduction loss in high-current LLC primary switches operating at 100–300 kHz.
Q_g, typ	28 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency soft-switching applications.
Q_rr, typ	0.34 µC at V_R = 400 V - minimizes turn-on losses during ZVS transitions and suppresses voltage overshoot in phase-shifted bridges.
diF/dt	1300 A/µs - ensures robust body diode commutation under hard-switching fault conditions without latch-up or thermal runaway.
E_oss	3.2 µJ at 400 V - lowers capacitive turn-off energy, improving efficiency in resonant topologies where output capacitance dominates switching loss.
T_j max	150 °C - qualified for continuous industrial operation with derated current above 100 °C case temperature.

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 8.0 mm × 8.0 mm × 1.0 mm. Drain connected to bottom thermal pad for low R_thJC (1.47 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires <10.2 Ω gate resistor to damp ringing during fast switching in ZVS circuits.
Pin 2	Source (Driver)	Low-inductance return path for gate driver loop; separate from power source to minimize noise coupling into control circuitry.
Pin 3 & 4	Source (Power)	Parallel source terminals for main current return; reduce source inductance and improve diF/dt ruggedness during body diode commutation.
Pin 5	Drain	Thermally and electrically connected to exposed copper pad; must be soldered to large PCB copper area (≥6 cm²) for thermal management.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 89–134 ns and Qrr = 0.34 µC - eliminates need for external anti-parallel SiC Schottky diodes in LLC half-bridge legs.
Low R_DS(on) × Q_g FOM	5.2 mΩ·nC - enables higher switching frequency without sacrificing conduction or switching loss balance in 100–500 kHz designs.
Enhanced dv/dt ruggedness	120 V/ns MOSFET dv/dt and 70 V/ns diode dv/dt - prevents false turn-on in high dV/dt environments like multi-phase interleaved PFC stages.
Industrial qualification	JEDEC47/20/22 compliant - validated for 15-year lifetime in server PSU and telecom rectifier applications with 100 % temperature cycling and HTRB testing.
Thermal performance	R_thJA = 35–45 °C/W on 40 mm × 40 mm FR4 PCB - supports >85 W power dissipation without heatsink in compact SMD layouts.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant DC-DC converter for AI server rack power distribution.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 250 kHz with ZVS turn-on and controlled body diode commutation.

Use Value: 0.34 µC Qrr and 1300 A/µs diF/dt enable stable soft switching across full load range, reducing system-level cooling requirements by 18 %.

Use Scenario: Main switch in 2.5 kW phase-shifted full-bridge rectifier for 48 V telecom base station power systems.

IC Role / Device Role / Timing Role: Hard-commutated ZVS switch with synchronous rectification timing alignment via gate driver dead-time optimization.

Use Value: 185 mΩ R_DS(on) at 150 °C maintains <1.2 W conduction loss at 14 A RMS, enabling 96.8 % peak efficiency at 230 V AC input.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Primary switch in bidirectional CLLC resonant converter for 11 kW EV OBC AC/DC and DC/AC modes.

IC Role / Device Role / Timing Role: Dual-role switch handling both forward and reverse power flow with symmetrical body diode performance.

Use Value: Matched forward/reverse diode characteristics (V_SD = 1.0 V, trr = 89–134 ns) ensure balanced efficiency in bidirectional operation without added diode losses.

Use Scenario: Output stage switch in 5 kVA three-phase UPS inverter with active front-end and battery backup.

IC Role / Device Role / Timing Role: Low-loss IGBT replacement in 16 kHz PWM inverter leg, leveraging fast body diode for freewheeling.

Use Value: 28 nC Q_g and 6 ns fall time allow clean 16 kHz switching with <0.5 % THD, eliminating need for snubber networks in motor drive outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CFD7	R_DS(on) = 99 mΩ, Q_g = 44 nC, same CFD7 platform	Higher conduction loss margin but increased gate drive loss; suited for lower-frequency (<150 kHz) ZVS designs	Select when prioritizing conduction loss over switching loss in high-current, low-frequency LLC stages.
STW62N60M2	600 V, 62 mΩ, standard superjunction, Q_rr = 1.2 µC, no fast diode	Lacks diF/dt ruggedness and soft-recovery capability; requires external diode for ZVS	Choose only for cost-sensitive, non-resonant hard-switched topologies where body diode performance is not critical.

Compared with IPW60R099CFD7 and STW62N60M2, IPL60R185CFD7AUMA1 offers the optimal trade-off between gate drive simplicity (28 nC), body diode robustness (1300 A/µs), and thermal density (1.47 °C/W), making it uniquely suitable for compact, high-efficiency 200–300 kHz resonant converters.

Availability

IPL60R185CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing for high-reliability deployments.

Supply support for IPL60R185CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies such as LLC and phase-shifted full-bridge converters, targeting high-efficiency, high-power-density power supply designs in datacenter and telecom infrastructure.

FAQ

What is the recommended gate resistor value for IPL60R185CFD7AUMA1 in a 300 kHz LLC converter?

Infineon recommends R_G = 10.2 Ω for evaluation (per datasheet test condition), but for 300 kHz operation, 6.8–8.2 Ω is typical to ensure adequate dV/dt control while maintaining ZVS. Lower values increase gate current stress; higher values risk incomplete turn-on within short dead times. Layout parasitics must be minimized to avoid oscillation.

Can IPL60R185CFD7AUMA1 replace older CoolMOS™ CFD2 devices in existing designs?

Yes - IPL60R185CFD7AUMA1 is a direct drop-in replacement for IPL60R185CFD2 in most cases, offering identical R_DS(on), improved Q_rr (0.34 µC vs. 0.52 µC), and enhanced diF/dt rating (1300 A/µs vs. 900 A/µs). No layout changes are required, though gate drive strength may be relaxed due to lower Q_g.

Is thermal pad soldering mandatory for IPL60R185CFD7AUMA1?

Yes - the exposed drain pad (Pin 5) is electrically and thermally connected to the die. Omitting solder connection increases R_thJC by >5× and risks thermal runaway at >10 W dissipation. IPC-7095-compliant stencil design and 6 cm² minimum copper area are required per Infineon's mounting guidelines.

Does IPL60R185CFD7AUMA1 require gate clamping for 600 V bus applications?

No - the device supports ±30 V dynamic gate voltage (V_GS) and features built-in gate oxide protection. However, a 15 V Zener clamp (e.g., BZX84-C15) between gate and source is recommended for systems with high dv/dt noise (>50 V/ns) near gate traces to prevent accidental overstress during startup or fault conditions.

IPL60R185CFD7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 185mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1199 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL60R185CFD7AUMA1 FAQ

1.How can I place an order for IPL60R185CFD7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL60R185CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL60R185CFD7AUMA1 reliable?

The price and inventory of IPL60R185CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL60R185CFD7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL60R185CFD7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL60R185CFD7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL60R185CFD7AUMA1?

IPL60R185CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL60R185CFD7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL60R185CFD7AUMA1?

For technical support, including IPL60R185CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL60R185CFD7AUMA1 requirements.

6.How does Aetrix verify that IPL60R185CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL60R185CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL60R185CFD7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL60R185CFD7AUMA1?

All IPL60R185CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL60R185CFD7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL60R185CFD7AUMA1 part is unused and in its original packaging.

Return procedure for IPL60R185CFD7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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