Infineon Technologies IPL60R285P7AUMA1

Overview

IPL60R285P7AUMA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in ThinPAK 8x8 package, featuring R_DS(on) = 285 mΩ (max), Q_g = 18 nC (typ), and 800 A/µs body diode commutation speed. It serves as a high-efficiency primary-side switch in hard- and resonant-mode SMPS topologies including PFC and LLC converters for server PSUs and telecom rectifiers.

For engineers reviewing the IPL60R285P7AUMA1 datasheet, IPL60R285P7AUMA1 pinout, IPL60R285P7AUMA1 application, or IPL60R285P7AUMA1 equivalent, key selection criteria include its low E_oss (2.1 µJ @ 400 V), robust 650 V V_DS rating, JEDEC-qualified industrial temperature range (−40 °C to +150 °C), and gate ruggedness enabling stable operation without snubbers in high-dv/dt environments.

Technical Context

This CoolMOS™ P7 device implements a charge-compensated superjunction structure with optimized cell pitch and trench depth, delivering simultaneous reduction in conduction loss (R_DS(on) × A = <1 Ω·mm²) and switching loss (E_oss, Q_gd). Its gate plateau voltage of 5.2 V ensures predictable Miller-driven turn-off timing in high-frequency PWM stages.

The integrated body diode achieves 800 A/µs diF/dt capability and 158 ns t_rr, enabling reliable hard commutation in asymmetric half-bridge and totem-pole PFC designs without external freewheeling diodes. Thermal resistance R_thJC = 2.1 °C/W supports compact heatsink integration in space-constrained 1U server power supplies.

Key Specifications

Pinout & Package

ThinPAK 8x8 (PG-VSON-4) package with exposed drain pad on bottom side for thermal conduction. Four terminals: Drain (Pin 5), Gate (Pin 1), Power Source (Pins 3 & 4), Driver Source (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW60R099P7 and IPP60R285P7, IPL60R285P7AUMA1 uniquely balances low gate charge, surface-mount ThinPAK packaging, and industrial-grade thermal robustness-making it optimal for high-density, high-reliability 200–400 kHz SMPS where board space and driver cost are critical constraints.

Availability

IPL60R285P7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS inverters, and LED streetlight drivers requiring stable component supply and long-term production continuity.

Supply support for IPL60R285P7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and superjunction MOSFET technologies.

The CoolMOS™ P7 product line targets high-efficiency, high-power-density AC-DC and DC-DC conversion systems-designed specifically for next-generation server, telecom, and industrial power supplies demanding reduced conduction and switching losses without sacrificing ruggedness.

FAQ

What is the maximum continuous drain current for IPL60R285P7AUMA1 at 100°C case temperature?

The maximum continuous drain current is 8 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is limited by junction temperature (T_j,max = 150 °C) and thermal resistance R_thJC = 2.1 °C/W. Derating follows linear interpolation between 13 A at 25 °C and 8 A at 100 °C.

Does IPL60R285P7AUMA1 require a gate resistor for stability in hard-switching PFC applications?

No external gate resistor is required for basic stability due to its low ringing tendency and 5.2 V gate plateau voltage. However, a 5–10 Ω series resistor is recommended when paralleling multiple devices to suppress oscillation, per Infineon's application note AN2017-05.

Can IPL60R285P7AUMA1 replace IPL60R285P6 in existing designs?

Yes-pin-to-pin compatible with identical ThinPAK 8x8 package, R_DS(on), and gate drive requirements. The P7 offers lower E_oss (2.1 µJ vs. 2.8 µJ) and improved diF/dt (800 A/µs vs. 600 A/µs), enabling immediate efficiency gains without layout changes.

What is the recommended PCB layout for thermal performance of IPL60R285P7AUMA1?

Use ≥6 cm² of 70 µm thick copper on the bottom layer connected to Pin 5 (Drain) via ≥8 thermal vias (0.3 mm diameter). Keep Gate (Pin 1) and Driver Source (Pin 2) traces short and separated; route Power Source (Pins 3 & 4) directly to ground plane with minimum loop area to reduce EMI.