Infineon Technologies IPL60R2K1C6SATMA1

Overview

IPL60R2K1C6SATMA1 from Infineon Technologies is a 600 V, 2.1 Ω (max) superjunction N-channel power MOSFET in the CoolMOS™ C6 family, optimized for high-efficiency hard-switching and resonant PFC/SMPS stages. It delivers 5.4 A pulsed drain current, 6.7 nC typical gate charge, and 0.76 µJ output energy at 400 V, enabling compact, thermally efficient designs in server PSUs and telecom rectifiers.

For engineers reviewing the IPL60R2K1C6SATMA1 datasheet, IPL60R2K1C6SATMA1 pinout, IPL60R2K1C6SATMA1 application, or IPL60R2K1C6SATMA1 equivalent, key selection criteria include its 500 A/µs body diode commutation ruggedness, 5.8 °C/W junction-to-case thermal resistance, low R_DS(on) × Q_g figure-of-merit, and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure to achieve simultaneous reduction in conduction and switching losses. Its 650 V V_DS rating at T_j,max supports 400 V DC-link operation with margin, while the 5.4 A I_D,pulse and 11 mJ single-pulse avalanche energy ensure robustness under transient overloads.

The MOSFET features a 5.4 V gate plateau voltage and 12 Ω intrinsic gate resistance, simplifying gate driver design without external damping. Its 8.5 pF effective output capacitance (energy-related) and 180 ns reverse recovery time support high-frequency ZVS/ZCS topologies in LLC resonant converters and active clamp forward designs.

Key Specifications

Pinout & Package

Supplied in ThinPAK 5x6 SMD package (JEDEC MO-263AA), this MOSFET has three terminals: Drain (D), Source (S), and Gate (G). The exposed drain pad on the bottom provides low-inductance, high-current path and primary thermal conduction to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099C6 and STP60N6F6, IPL60R2K1C6SATMA1 offers optimal balance of R_DS(on), Q_g, and package thermal performance for SMD-based 100–300 kHz PFC and resonant converters requiring JEDEC industrial qualification and compact layout.

Availability

IPL60R2K1C6SATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and LCD TV backlight inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPL60R2K1C6SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This device belongs to the CoolMOS™ C6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-density AC/DC and DC/DC conversion in industrial and computing power systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 12.2 Ω gate resistor in dynamic characterization tests (V_DD = 400 V, I_D = 0.9 A). For 5.4 A pulsed operation, a 10–15 Ω non-inductive resistor is recommended to limit peak gate current to <1 A while suppressing oscillation. Values above 22 Ω increase switching time and loss disproportionately.

Can IPL60R2K1C6SATMA1 be paralleled in high-current PFC designs?

Yes - the datasheet explicitly recommends paralleling with ferrite beads on each gate or individual totem-pole drivers to equalize dynamic current sharing. Matching R_DS(on) tolerance (±20%) and symmetric PCB layout are required; thermal coupling via shared copper area improves current balance at steady state.

Does this MOSFET require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive. Its 3.5 V maximum V_GS(th) and 5.4 V gate plateau ensure strong enhancement at 10 V, and the 30 V absolute maximum V_GS rating permits brief overshoots without damage. Negative bias is unnecessary and not specified in any application circuit.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA curve (Figure 2, datasheet p.7) limits continuous DC operation to ≤1.2 A at 400 V, or ≤2.5 A at 200 V. For pulse widths ≤100 µs, it supports up to 4.5 A at 400 V. Exceeding these boundaries risks thermal runaway due to R_DS(on) positive temperature coefficient at high V_DS.