Infineon Technologies IPL65R095CFD7AUMA1
- Part No.:
- IPL65R095CFD7AUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 4-PowerTSFN
- Datasheet:
-
IPL65R095CFD7AUMA1.pdf
- Description:
- COOLMOS CFD7 SUPERJUNCTION MOSFE
- Quantity:
- Payment:

- Shipping:

Inventory:2,970
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Product details
Overview
IPL65R095CFD7AUMA1 from Infineon is a 650 V, 95 mΩ ultra-fast body diode Superjunction MOSFET in ThinPAK 8x8 package with drain-connected pin 5, gate on pin 1, power source on pins 3–4, and driver source on pin 2. It delivers 107 A pulsed drain current, 53 nC total gate charge, and 1300 A/µs diode commutation speed for resonant topologies.
For engineers reviewing the IPL65R095CFD7AUMA1 datasheet, IPL65R095CFD7AUMA1 pinout, IPL65R095CFD7AUMA1 application, or IPL65R095CFD7AUMA1 equivalent, key selection criteria include ZVS-compatible switching performance, hard-commutation ruggedness, RDS(on) temperature stability, and validated industrial qualification per JEDEC.
Technical Context
This CoolMOS™ CFD7 device uses charge compensation technology to achieve low RDS(on) (95 mΩ max) with minimal dependency over temperature and reduced Eoss (7.4 µJ at 400 V), enabling high-efficiency LLC and phase-shift full-bridge operation. Its internal fast body diode supports di/dt up to 1300 A/µs without oscillation or failure under hard commutation.
The ThinPAK 8x8 package integrates isolated source sensing (driver source pin 2) and power source (pins 3–4), preventing interchangeability and ensuring stable gate drive during paralleling. Gate plateau voltage is 5.7 V, and turn-off delay is 79 ns at 400 V, 12.5 A, with 5.3 Ω external gate resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 700 V - Ensures 50 V margin above 650 V rated breakdown for bus voltage transients in telecom/solar systems |
| RDS(on) max | 95 mΩ at Tj = 150 °C - Enables compact thermal design with low conduction loss at full load |
| Qg typ | 53 nC - Low gate drive energy reduces controller loading and improves switching efficiency in high-frequency SMPS |
| Eoss @ 400 V | 7.4 µJ - Minimizes capacitive turn-on loss critical for soft-switching topologies like LLC |
| diF/dt max | 1300 A/µs - Guarantees robust reverse recovery in hard-commutated PFC and synchronous rectifier stages |
| Tj max | 150 °C - Validated for continuous industrial operation with JEDEC qualification |
| RthJC | 0.73 °C/W - Supports high-power density designs with direct case cooling via PCB copper area |
Pinout & Package
ThinPAK 8x8 surface-mount package with exposed drain pad (pin 5), isolated gate (pin 1), dual power source (pins 3 and 4), and dedicated driver source (pin 2). Pin numbering follows standard top-view orientation with pin 1 marked by dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control input requiring <5.7 V plateau voltage; must be driven with low-inductance path to avoid ringing |
| Pin 2 | Driver Source | Reference for gate driver IC return; not interchangeable with power source to prevent shoot-through |
| Pins 3 & 4 | Power Source | Main current return path for high-side switching; connected to PCB ground plane with ≥6 cm² copper |
| Pin 5 | Drain | High-voltage output node; electrically tied to exposed thermal pad for simultaneous electrical and thermal conduction |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast body diode | 1300 A/µs diF/dt rating enables reliable hard commutation without snubbers in PFC and ZVS converters |
| Low RDS(on) tempco | RDS(on) increases only ~1.8× from 25 °C to 150 °C - maintains efficiency across wide ambient range |
| Reduced Eoss | 7.4 µJ at 400 V - cuts turn-on loss by >30% vs. prior CFD2 generation in 100–300 kHz LLC designs |
| JEDEC industrial qualification | Full qualification per JESD47 and JESD22 - ensures reliability in server PSUs, telecom rectifiers, and EV chargers |
| Source pin separation | Dedicated driver source (pin 2) isolates gate loop from high di/dt power return - eliminates false triggering |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: 3 kW, 96% efficient 48 V output LLC resonant converter in hyperscale data center PSU. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 250–350 kHz with zero-voltage switching. Use Value: 95 mΩ RDS(on) and 7.4 µJ Eoss reduce conduction + switching losses, enabling 96% peak efficiency at 50% load. | Use Scenario: 48 V/3000 W front-end rectifier for central office telecom infrastructure with 400 V DC bus. IC Role / Device Role / Timing Role: Active clamp forward or phase-shift full-bridge primary switch handling 107 A pulsed current. Use Value: 1300 A/µs diF/dt and 150 °C Tj rating ensure robustness during line surges and hot-swap events. |
| EV Onboard Charger | Solar String Inverter |
Use Scenario: Bidirectional 11 kW OBC with dual-phase interleaved LLC topology charging at 400–800 V battery range. IC Role / Device Role / Timing Role: High-side switch in resonant tank with synchronous rectification control. Use Value: Fast body diode eliminates need for external SiC Schottky, reducing BOM count and layout complexity. | Use Scenario: 10 kW string inverter MPPT stage using two-phase interleaved boost with 1000 V DC input. IC Role / Device Role / Timing Role: Boost switch operating in discontinuous conduction mode with hard commutation at light load. Use Value: JEDEC industrial qualification and 700 V VDS rating provide safety margin against solar array transient overvoltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R095C7 | TO-247-3 package; higher RthJA (62 °C/W); same RDS(on), Qg, and VDS | Requires heatsink; unsuitable for ultra-thin or convection-cooled designs | Select when mechanical mounting flexibility outweighs board space constraints |
| STP65N9F6 | 650 V, 95 mΩ, but no fast body diode (diF/dt = 400 A/µs); higher Qrr (3.2 µC) | Limited to soft-switched topologies only; fails under hard commutation | Select only for cost-sensitive non-ZVS applications where diode recovery is clamped |
Compared with IPW65R095C7 and STP65N9F6, IPL65R095CFD7AUMA1 uniquely combines SMD thin-package thermal performance, 1300 A/µs diF/dt capability, and JEDEC industrial validation-making it the only choice for space-constrained, high-reliability ZVS converters.
Availability
IPL65R095CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and high-power-density packaging.
Supply support for IPL65R095CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
This device belongs to the CoolMOS™ CFD7 family, engineered specifically for high-efficiency resonant switching topologies-including LLC and phase-shift full-bridge-where fast body diode performance and thermal robustness are critical.
FAQ
Can IPL65R095CFD7AUMA1 replace older CoolMOS™ CFD2 devices in existing designs?
Yes, it is a direct successor to the 650 V CFD2 series with identical pinout, voltage rating, and RDS(on) value, but offers improved Eoss, faster diode recovery, and lower temperature coefficient. Layout changes are unnecessary, though gate drive optimization may yield additional efficiency gains.
Why are source pins 2, 3, and 4 not interchangeable?
Pin 2 is the driver source-return path for the gate driver IC-while pins 3 and 4 are power source terminals carrying high di/dt return current. Swapping them introduces ground bounce in the gate loop, risking false turn-on and shoot-through failure during switching transitions.
What is the maximum recommended gate resistor value for ZVS operation?
For reliable zero-voltage switching in LLC converters, Infineon recommends RG ≤ 5.3 Ω (as tested in datasheet conditions). Higher values increase turn-off delay and risk incomplete depletion before voltage rise, degrading ZVS margin and increasing Eoff.
Is IPL65R095CFD7AUMA1 suitable for paralleling in high-current designs?
Yes, but only with strict layout rules: individual gate resistors placed directly at pin 2 (driver source), matched trace lengths, and symmetrical thermal coupling. The separated source pins enable Kelvin sensing for balanced current sharing, validated up to four parallel devices in industrial reference designs.
IPL65R095CFD7AUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- 4-PowerTSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 95mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2513 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 171W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VSON-4
IPL65R095CFD7AUMA1 FAQ
1.How can I place an order for IPL65R095CFD7AUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPL65R095CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPL65R095CFD7AUMA1 reliable?
The price and inventory of IPL65R095CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R095CFD7AUMA1 is usually 5 days.
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IPL65R095CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPL65R095CFD7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for IPL65R095CFD7AUMA1?
For technical support, including IPL65R095CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R095CFD7AUMA1 requirements.
6.How does Aetrix verify that IPL65R095CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?
All IPL65R095CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R095CFD7AUMA1 meets industry standards.
7.What is the process for return or replacement of IPL65R095CFD7AUMA1?
All IPL65R095CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R095CFD7AUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPL65R095CFD7AUMA1 part is unused and in its original packaging.
Return procedure for IPL65R095CFD7AUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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