Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL65R160CFD7AUMA1

Name: IPL65R160CFD7AUMA1
Brand: Infineon Technologies
SKU: IPL65R160CFD7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPL65R160CFD7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL65R160CFD7AUMA1.pdf

Description:: COOLMOS CFD7 SUPERJUNCTION MOSFE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,650

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPL65R160CFD7AUMA1 from Infineon is a 650 V superjunction MOSFET in ThinPAK 8x8 package with integrated fast body diode and ESD protection, rated for 17 A continuous drain current at 25°C, 160 mΩ max R_DS(on), and optimized for zero-voltage switching (ZVS) topologies including LLC and phase-shift full-bridge converters in server power supplies and EV charging systems.

For engineers reviewing the IPL65R160CFD7AUMA1 datasheet, IPL65R160CFD7AUMA1 pinout, IPL65R160CFD7AUMA1 application, or IPL65R160CFD7AUMA1 equivalent, this device delivers ultra-fast diode recovery (97–146 ns trr), high diF/dt capability (1300 A/µs), low gate charge (28 nC typ), and robust hard commutation performance-critical for resonant converter reliability and light-load efficiency.

Technical Context

This CoolMOS™ CFD7 device employs charge compensation technology to achieve low R_DS(on) × area while maintaining fast intrinsic body diode behavior. Its 700 V absolute maximum drain-source voltage rating supports 400 V bus designs with safety margin, and its 1300 A/µs diF/dt rating enables reliable operation under hard commutation stress without external snubbers.

The MOSFET features a dedicated Driver Source (Pin 2) separate from main Source pins (3,4), enabling precise gate drive referencing and minimizing common-source inductance effects during paralleling. Gate plateau voltage is fixed at 5.7 V, supporting stable turn-on timing in high-frequency ZVS control schemes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - Enables 400 V DC bus designs with 75% voltage margin for transient overvoltage tolerance
R_DS(on) max	160 mΩ @ T_j = 25°C - Delivers low conduction loss in high-current industrial SMPS output stages
Q_g typ	28 nC - Reduces gate driver power demand and enables >300 kHz switching in LLC resonant controllers
E_oss @ 400 V	4.0 µJ - Low stored output capacitance energy minimizes dead-time losses in ZVS transitions
diF/dt max	1300 A/µs - Supports rugged hard-switching events in asymmetric half-bridge and PFC boost stages
t_rr	97–146 ns - Fast reverse recovery avoids cross-conduction and reduces diode switching loss in synchronous rectification
P_tot	98 W @ T_C = 25°C - High thermal capability allows compact heatsink integration in space-constrained 3–5 kW modules

Pinout & Package

ThinPAK 8x8 surface-mount package with exposed drain pad for thermal enhancement; 4-pin configuration with isolated Driver Source terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring <10.2 Ω series gate resistor to suppress oscillation during fast edge transitions
Pin 2	Driver Source	Dedicated Kelvin source for gate driver return path-must not be connected to power ground or main source pins
Pin 3 & 4	Main Source	High-current return path for drain current; electrically isolated from Pin 2 per design specification
Drain (exposed pad)	Power Drain	Thermally and electrically connected to PCB copper pour; primary heat dissipation path with R_thJC = 1.27 °C/W

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 97–146 ns and diF/dt = 1300 A/µs enable reliable hard commutation without external freewheeling diodes
Low temperature coefficient of R_DS(on)	R_DS(on) increases only ~1.8× from 25°C to 150°C-improves current sharing stability in paralleled configurations
Integrated ESD diode	On-chip protection meets HBM Class 2 (≥2 kV), reducing need for external TVS on gate traces in board-level ESD-prone environments
Optimized for ZVS topologies	E_oss = 4.0 µJ at 400 V ensures minimal energy loss during resonant turn-off, directly improving LLC converter peak efficiency

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end LLC resonant converter operating at 300–500 kHz with 48 V output.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetrical half-bridge LLC topology, handling 17 A RMS drain current.

Use Value: Ultra-low E_oss and fast diode recovery reduce switching loss by ≥12% vs. CFD2 generation at 400 V bus, extending thermal headroom.

Use Scenario: 2.5 kW telecom rectifier with phase-shift full-bridge (PSFB) architecture and digital PWM control.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch with active body diode conduction during ZVS dead time.

Use Value: 1300 A/µs diF/dt rating prevents latch-up during rapid polarity reversal, eliminating need for external anti-paralleled Schottky diodes.

EV Onboard Charger

Solar String Inverter

Use Scenario: Bidirectional OBC with dual-active-bridge (DAB) topology operating at 100–200 kHz and 800 V DC link.

IC Role / Device Role / Timing Role: High-side bridge arm switch in DAB primary stage, conducting 11 A continuous at T_C = 100°C.

Use Value: 700 V V_DS rating provides 100 V margin above 650 V nominal bus, accommodating regenerative voltage spikes during AC grid faults.

Use Scenario: 10 kW string inverter with two-level NPC topology and 1000 V DC input.

IC Role / Device Role / Timing Role: Low-side IGBT co-driver MOSFET in gate drive stage, delivering 55 A pulsed current to charge/discharge IGBT gates.

Use Value: 28 nC Q_g enables sub-100 ns gate drive rise/fall times, ensuring tight timing control for 16 kHz NPC switching with <±5 ns skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7	Lower R_DS(on) (95 mΩ), higher Q_g (42 nC), same package	Better conduction loss but higher gate drive loss; requires stronger gate driver for >300 kHz operation	Select when thermal budget is constrained and gate drive capability supports 42 nC charge
IPP65R190CFD7	Higher R_DS(on) (190 mΩ), lower Q_g (22 nC), same package	Reduced switching loss at light load but higher conduction loss at full load; better for intermittent duty cycles	Select when system operates predominantly below 30% load and gate drive strength is limited

Compared with IPW65R095CFD7 and IPP65R190CFD7, IPL65R160CFD7AUMA1 balances conduction and switching loss across 20–100% load range, making it optimal for industrial SMPS with variable loading profiles and moderate gate drive capability.

Availability

IPL65R160CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPL65R160CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the CoolMOS™ CFD7 family-designed specifically for high-efficiency resonant converters demanding fast body diode performance, high dv/dt ruggedness, and stable R_DS(on) over temperature in 650 V industrial power applications.

FAQ

Can IPL65R160CFD7AUMA1 be used in hard-switched PFC boost stages?

Yes, it is qualified for hard-switched PFC applications due to its 120 V/ns dv/dt ruggedness and 1300 A/µs diF/dt rating. However, its optimized E_oss and body diode speed deliver greatest benefit in ZVS topologies; for continuous hard-switching, thermal derating to ≤11 A at T_C = 100°C is recommended per datasheet SOA curves.

What is the functional difference between Pin 2 (Driver Source) and Pins 3/4 (Source)?

Pin 2 is a Kelvin sense connection exclusively for gate driver return, providing noise-immune referencing to minimize Miller-induced false turn-on. Pins 3 and 4 carry full load current and must remain electrically isolated from Pin 2; interchanging them causes gate drive instability and potential device failure per datasheet warning.

Is IPL65R160CFD7AUMA1 RoHS and REACH compliant?

Yes, it complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Infineon's official material declaration (Doc-ID: 101042235). Lead-free reflow profile follows JEDEC J-STD-020 MSL2A with peak temperature ≤260°C.

Does the internal body diode replace the need for an external freewheeling diode in LLC half-bridge designs?

No-the internal diode is optimized for ZVS commutation, not continuous conduction. In LLC half-bridge configurations, it conducts only during dead-time intervals; sustained forward current must still be handled by external synchronous rectifiers or secondary-side diodes per transformer winding configuration and control scheme.

IPL65R160CFD7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1283 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 98W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL65R160CFD7AUMA1 FAQ

1.How can I place an order for IPL65R160CFD7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL65R160CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL65R160CFD7AUMA1 reliable?

The price and inventory of IPL65R160CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R160CFD7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL65R160CFD7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL65R160CFD7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL65R160CFD7AUMA1?

IPL65R160CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL65R160CFD7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL65R160CFD7AUMA1?

For technical support, including IPL65R160CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R160CFD7AUMA1 requirements.

6.How does Aetrix verify that IPL65R160CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL65R160CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R160CFD7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL65R160CFD7AUMA1?

All IPL65R160CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R160CFD7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL65R160CFD7AUMA1 part is unused and in its original packaging.

Return procedure for IPL65R160CFD7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …