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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL65R195C7AUMA1

Name: IPL65R195C7AUMA1
Brand: Infineon Technologies
SKU: IPL65R195C7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL65R195C7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL65R195C7AUMA1.pdf

Description:: MOSFET N-CH 650V 12A 4VSON

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Product details

Overview

IPL65R195C7AUMA1 from Infineon Technologies is a 650 V, 195 mΩ superjunction N-channel MOSFET in ThinPAK 8x8 SMD package, featuring driver source pin (Pin 2), drain pin (Pin 5), and dual power source pins (Pins 3 & 4). It delivers 23 nC total gate charge, 2.7 µJ E_oss at 400 V, and 55 A/µs body diode diF/dt for high-frequency PFC and hard-switching PWM stages in telecom and solar inverters.

For engineers reviewing the IPL65R195C7AUMA1 datasheet, IPL65R195C7AUMA1 pinout, IPL65R195C7AUMA1 application, or IPL65R195C7AUMA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, dv/dt ruggedness (100 V/ns), thermal resistance (1.66 °C/W j-c), driver source pin implementation, and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ C7 device employs superjunction architecture to achieve low conduction loss while maintaining fast switching capability. Its optimized charge distribution enables reduced Q_gd/Q_g ratio and low effective output capacitance (C_o(er) = 34 pF), directly supporting higher-frequency operation without sacrificing avalanche robustness.

The integrated driver source pin (Pin 2) provides Kelvin connection for gate loop decoupling, minimizing common-source inductance effects during turn-on/turn-off transients. Combined with 1.66 °C/W junction-to-case thermal resistance and 75 W power dissipation at T_C = 25°C, it supports compact, high-power-density designs in thermally constrained layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated blocking voltage enabling use in 400 V AC input PFC and 600 V bus applications.
R_DS(on), max	195 mΩ @ T_j = 150°C - Ensures low conduction loss under full thermal load in continuous operation.
Q_g, typ	23 nC @ V_DD = 400 V - Enables efficient gate driving with moderate-current drivers and predictable switching timing.
E_oss	2.7 µJ @ 400 V - Low stored output energy reduces turn-off losses and improves efficiency at high frequencies.
diF/dt	55 A/µs - Supports fast, controlled body diode commutation in bridge-leg configurations without oscillation.
dv/dt ruggedness	100 V/ns - Withstands steep voltage transients in hard-switched topologies without false turn-on.
T_j max	150°C - Industrial-grade junction temperature rating validated per JEDEC JESD22-A103 and J-STD-020.

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, leadless, thermally enhanced with exposed drain pad. Pin 1: Gate; Pin 2: Driver Source (Kelvin source); Pins 3 & 4: Power Source (common source); Pin 5: Drain (exposed pad).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main control terminal; requires standard 10–15 V drive referenced to driver source (Pin 2).
Pin 2	Driver Source	Kelvin sense point for gate loop; eliminates source inductance impact on switching waveform fidelity.
Pins 3 & 4	Power Source	High-current source return path; electrically separate from Pin 2 to preserve gate control integrity.
Pin 5	Drain	High-voltage power terminal; connected to exposed copper pad for low-inductance, high-current routing and thermal conduction.

Key Features

Feature	Design Value
Superjunction structure	Enables 195 mΩ R_DS(on) at 650 V while maintaining <100 ns turn-off delay and low C_iss (1150 pF).
Driver source pin (Kelvin source)	Decouples gate drive loop from high di/dt source current, reducing overshoot and improving dV/dt immunity.
Low E_oss (2.7 µJ @ 400 V)	Reduces turn-off energy loss by >30% vs. prior-generation CoolMOS™ C3, enabling 100+ kHz PFC operation.
Industrial qualification	Qualified per JEDEC J-STD-020 (MSL2a, 260°C reflow) and JESD22-A103 (temperature cycling), ensuring reliability in production environments.
ThinPAK 8x8 footprint	Provides 40% smaller PCB area vs. TO-220 while delivering 1.66 °C/W R_thJC, supporting >1 kW/L power density.

Applications

Server PSU PFC Stage

Telecom Rectifier Module

Use Scenario: Active boost PFC in 3 kW server power supply operating at 100 kHz switching frequency with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles 12 A RMS input current and 400 V DC bus.

Use Value: 195 mΩ R_DS(on) and 23 nC Q_g enable >96% PFC efficiency at full load while maintaining stable gate drive with driver source pin.

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with 380–400 V DC output and forced-air cooling.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in phase-shifted full-bridge topology; operates at 75–125 kHz with ZVS assistance.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during high di/dt transitions; low E_oss reduces turn-off loss under ZVS boundary conditions.

Solar String Inverter DC-DC Stage

Industrial UPS Inverter Bridge

Use Scenario: Isolated DC-DC stage in 5 kW string inverter converting 1000 V DC input to 400 V intermediate bus.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC half-bridge; subjected to repetitive unclamped inductive switching stress.

Use Value: 57 mJ single-pulse avalanche energy (E_AS) and 55 A/µs diF/dt support reliable operation during transient overloads and soft-start events.

Use Scenario: Output H-bridge in 10 kVA online UPS with 480 V AC output and battery backup transition.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during transfer switching and regeneration; subject to high di/dt during zero-crossing commutation.

Use Value: Dual source pins (Pins 3 & 4) handle 12 A continuous current while driver source (Pin 2) maintains clean gate waveform during 49 A pulsed diode conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095C7	Lower R_DS(on) (95 mΩ), higher Q_g (42 nC), same 650 V rating and ThinPAK package.	Better conduction loss but higher gate drive demand; suited for lower-frequency, high-current PFC where switching loss is secondary.	Select when system prioritizes conduction efficiency over gate drive simplicity and thermal management headroom.
IPP65R195C7	TO-220FP package (not SMD), identical electrical specs (195 mΩ, 23 nC), higher R_thJA (62 °C/W vs. 35–45 °C/W).	Requires through-hole assembly and larger heatsink; less suitable for high-density, automated SMT production.	Choose only when legacy board layout or mechanical mounting constraints prohibit ThinPAK 8x8 footprint.

Compared with IPW65R095C7 and IPP65R195C7, IPL65R195C7AUMA1 uniquely balances low R_DS(on), minimal gate charge, and SMD thermal performance-making it optimal for space-constrained, high-efficiency telecom and solar converters requiring automated assembly and stable high-frequency operation.

Availability

IPL65R195C7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply, JEDEC-qualified industrial reliability, and SMT-compatible high-power density solutions.

Supply support for IPL65R195C7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in computing, telecom, and renewable energy systems where low R_DS(on) × Q_g and robust dv/dt immunity are critical.

FAQ

What is the purpose of the driver source pin (Pin 2) on IPL65R195C7AUMA1?

The driver source pin (Pin 2) is a Kelvin connection that isolates the gate drive return path from high-current source paths (Pins 3 & 4). This eliminates voltage drop across source inductance during fast switching, preventing gate oscillation and false turn-on. It enables precise gate voltage control even under 49 A pulsed current, improving EMI behavior and reliability in high-di/dt applications like PFC and bridge circuits.

Can IPL65R195C7AUMA1 be paralleled with identical units?

Yes, but with specific layout requirements: each unit must have individual gate resistors and ferrite beads placed as close as possible to the gate pin, and symmetrical PCB routing is mandatory to balance current sharing. The datasheet explicitly recommends ferrite beads on gate lines or separate totem-pole drivers to suppress parasitic oscillation and ensure stable parallel operation under high di/dt conditions.

How does IPL65R195C7AUMA1's E_oss compare to previous CoolMOS™ generations?

At 2.7 µJ (400 V), IPL65R195C7AUMA1 achieves ~40% lower E_oss than equivalent C3-series devices (e.g., IPL65R280C3: ~4.5 µJ). This reduction directly lowers turn-off energy loss, enabling higher switching frequencies (up to 150 kHz in PFC) without thermal penalty, and contributes to its best-in-class R_DS(on) × E_oss figure-of-merit cited in Infineon's C7 documentation.

Is IPL65R195C7AUMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes-it is widely used in LLC resonant converters and phase-shifted full-bridge designs. Its low C_oss (17 pF) and especially low Co(er) (34 pF) minimize capacitive turn-on loss, while its 100 V/ns dv/dt ruggedness ensures robust operation during ZVS transitions where voltage reversal occurs under high di/dt. The driver source pin further stabilizes gate control during soft-switching edge transitions.

IPL65R195C7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 195mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 290µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1150 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL65R195C7AUMA1 FAQ

1.How can I place an order for IPL65R195C7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL65R195C7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL65R195C7AUMA1 reliable?

The price and inventory of IPL65R195C7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R195C7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL65R195C7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL65R195C7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL65R195C7AUMA1?

IPL65R195C7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL65R195C7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL65R195C7AUMA1?

For technical support, including IPL65R195C7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R195C7AUMA1 requirements.

6.How does Aetrix verify that IPL65R195C7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL65R195C7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R195C7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL65R195C7AUMA1?

All IPL65R195C7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R195C7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL65R195C7AUMA1 part is unused and in its original packaging.

Return procedure for IPL65R195C7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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