Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL65R200CFD7AUMA1

Name: IPL65R200CFD7AUMA1
Brand: Infineon Technologies
SKU: IPL65R200CFD7AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPL65R200CFD7AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL65R200CFD7AUMA1.pdf

Description:: COOLMOS CFD7 SUPERJUNCTION MOSFE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPL65R200CFD7AUMA1 from Infineon is a 650 V superjunction MOSFET in ThinPAK 8x8 package with drain-connected pin 5, gate on pin 1, and source pins at 3 and 4. It features 200 mΩ max R_DS(on), 23 nC typical gate charge, ultra-fast body diode (1300 A/µs di_F/dt), and is qualified for industrial applications per JEDEC. Designed for LLC and phase-shift full-bridge ZVS topologies in server PSUs and EV charging.

For engineers reviewing the IPL65R200CFD7AUMA1 datasheet, IPL65R200CFD7AUMA1 pinout, IPL65R200CFD7AUMA1 application, or IPL65R200CFD7AUMA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss of 3.3 µJ at 400 V, thermal resistance R_thJC of 1.54 °C/W, and non-interchangeable source/sense-source pin assignment.

Technical Context

This CoolMOS™ CFD7 device implements superjunction architecture with integrated fast-recovery body diode and ESD protection. Its 650 V breakdown voltage supports bus voltages up to 700 V transient, while low Q_gd/Q_g ratio (7/23 nC) enables precise ZVS timing control in resonant converters.

The MOSFET delivers 14 A continuous drain current at T_C = 25°C and 9 A at T_C = 100°C, with R_DS(on) exhibiting only ~1.5× increase from 25°C to 150°C. Diode reverse recovery charge Q_rr is 0.40–0.80 µC at 400 V, supporting high-frequency soft-switching without oscillation risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V nominal DC bus with 75% margin for transients in telecom/server SMPS
R_DS(on) max	200 mΩ at T_j = 150°C - Enables <1.5 W conduction loss at 10 A in compact heatsink designs
Q_g typ	23 nC - Reduces gate driver power requirement and allows use of low-cost 1-A drivers
E_oss	3.3 µJ at 400 V - Low stored output capacitance energy minimizes turn-on switching loss in ZVS circuits
di_F/dt max	1300 A/µs - Ensures robust hard commutation in asymmetric half-bridge and phase-shifted topologies
R_thJC	1.54 °C/W - Allows 81 W power dissipation with ≤125°C junction rise over case in ThinPAK 8x8
Q_rr	0.40–0.80 µC - Limits reverse recovery loss and EMI generation during diode turn-off

Pinout & Package

Package: ThinPAK 8x8 (PG-VSON-4), surface-mount, exposed drain pad for thermal performance. Pin 1 = Gate, Pin 3 & 4 = Source (main and sense), Pin 5 = Drain. Source and sense-source pins are not interchangeable - misconnection causes malfunction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for MOSFET channel; requires 10 V drive for full enhancement; RG recommended on Driver Source path
Pin 3	Main Source	Primary current return path; carries full load current; connects to power ground plane
Pin 4	Sense Source	Reference node for gate drive loop; isolates gate return from high di/dt paths to suppress noise-induced turn-on
Pin 5	Drain	High-voltage input terminal; connected to exposed copper pad for thermal conduction to PCB

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs di_F/dt rating ensures reliable hard commutation without snap-off or voltage overshoot
Low temperature coefficient of R_DS(on)	R_DS(on) increases only ~1.5× from 25°C to 150°C, enabling stable current sharing in paralleled configurations
Integrated ESD diode	On-chip protection meets HBM Class 2 (≥2 kV), reducing need for external TVS in gate drive layout
Optimized for ZVS topologies	E_oss = 3.3 µJ at 400 V enables >95% efficiency in LLC converters operating at 200–500 kHz
JEDEC industrial qualification	Qualified per JESD47 and JESD22-A108, supporting 150°C T_j operation in server, telecom, and EV charging systems

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for AI server rack PSUs.

IC Role / Device Role / Timing Role: High-side ZVS switch with synchronous rectification support; operates at 300 kHz with 400 V bus.

Use Value: 3.3 µJ E_oss and 1300 A/µs di_F/dt enable zero-voltage turn-on and robust dead-time handling under dynamic load steps.

Use Scenario: Main switch in 2.5 kW phase-shift full-bridge rectifier for 48 V telecom distribution.

IC Role / Device Role / Timing Role: Hard-commutated high-side switch; handles 700 V transients during AC line surges.

Use Value: 700 V V_DS rating and 1.54 °C/W R_thJC sustain 14 A continuous current with minimal derating at 70°C ambient.

EV Onboard Charger

Solar Inverter Stage

Use Scenario: PFC + DC-DC stage switch in 11 kW bidirectional OBC for Level 2 charging.

IC Role / Device Role / Timing Role: Interleaved boost switch with 100 kHz switching; senses current via separate source pin.

Use Value: Sense-source pin enables accurate current monitoring without shunt resistor, improving efficiency by 0.3% at full load.

Use Scenario: Isolated DC-DC stage in string-level solar microinverter with 600 V DC input.

IC Role / Device Role / Timing Role: Resonant half-bridge switch; withstands 1500 V surge per IEC 62109.

Use Value: 650 V rating plus 700 V transient capability provides 25% safety margin against PV string overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7	95 mΩ R_DS(on), same CFD7 platform, higher Q_g (37 nC)	Better conduction loss but higher gate drive loss; requires stronger driver	Select when <10 mΩ R_DS(on) reduction justifies 60% higher Q_g and cost premium
IPP65R190CFD	Legacy CFD2 generation; 190 mΩ R_DS(on); slower di_F/dt (800 A/µs); no sense-source pin	Limited ZVS margin above 300 kHz; no current sensing capability	Acceptable for cost-sensitive 100–200 kHz PSUs where diode ruggedness is secondary

Compared with IPW65R095CFD7, IPL65R200CFD7AUMA1 trades 105 mΩ higher R_DS(on) for 14 nC lower Q_g and integrated sense-source - ideal for space-constrained ZVS designs needing gate drive simplicity and current feedback. Versus IPP65R190CFD, it adds di_F/dt headroom and JEDEC industrial qualification.

Availability

IPL65R200CFD7AUMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and ZVS-optimized switching performance.

Supply support for IPL65R200CFD7AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency resonant topologies (LLC, PSFB) in industrial and infrastructure power conversion where hard commutation robustness and light-load efficiency are critical.

FAQ

Can IPL65R200CFD7AUMA1 be used in hard-switched topologies like flyback or forward converters?

No - this device is optimized for soft-switching applications. Its ultra-fast body diode and low E_oss deliver value only in ZVS conditions. In hard-switched topologies, its Q_gd/Q_g ratio and diode recovery characteristics may cause excessive switching loss and voltage spikes. Use standard CoolMOS™ C3 or CE series instead for flyback/forward designs.

What is the purpose of the separate sense-source pin (Pin 4), and can it be left unconnected?

Pin 4 is the Kelvin sense-source connection for gate drive reference. It must be routed separately from main source (Pin 3) to avoid noise coupling into the gate loop. Leaving it unconnected disables the internal Kelvin configuration and degrades noise immunity - it must be connected to the gate driver's source return path, not to power ground.

How does the 1300 A/µs di_F/dt rating improve system reliability in phase-shift full-bridge converters?

This rating ensures the body diode recovers cleanly during hard commutation events - such as when lagging-leg switches turn on while the leading-leg body diode conducts. At 1300 A/µs, it avoids snap-off and associated voltage overshoot (>100 V spikes), eliminating snubber requirements and preventing MOSFET avalanche stress in high-power PSFB designs.

Is IPL65R200CFD7AUMA1 RoHS-compliant and halogen-free?

Yes - it complies with EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The "AUMA1" suffix denotes tape-and-reel packaging with lead-free (Pb-free) terminations and green molding compound, certified to IPC/JEDEC J-STD-020 moisture sensitivity level MSL2A.

IPL65R200CFD7AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 260µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1044 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 81W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL65R200CFD7AUMA1 FAQ

1.How can I place an order for IPL65R200CFD7AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL65R200CFD7AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL65R200CFD7AUMA1 reliable?

The price and inventory of IPL65R200CFD7AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R200CFD7AUMA1 is usually 5 days.

3.What payment methods are accepted for IPL65R200CFD7AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL65R200CFD7AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL65R200CFD7AUMA1?

IPL65R200CFD7AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL65R200CFD7AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL65R200CFD7AUMA1?

For technical support, including IPL65R200CFD7AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R200CFD7AUMA1 requirements.

6.How does Aetrix verify that IPL65R200CFD7AUMA1 is sourced from the original manufacturer or authorized distributors?

All IPL65R200CFD7AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R200CFD7AUMA1 meets industry standards.

7.What is the process for return or replacement of IPL65R200CFD7AUMA1?

All IPL65R200CFD7AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R200CFD7AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL65R200CFD7AUMA1 part is unused and in its original packaging.

Return procedure for IPL65R200CFD7AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …