Infineon Technologies IPLU300N04S41R1XTMA1

Overview

IPLU300N04S41R1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in H-PSOF-8-1 package, rated for 40 V V_DS, 1.15 mΩ R_DS(on) at 100 A/10 V, and 300 A continuous drain current at T_C = 25 °C. It delivers ultra-low conduction loss and 100% avalanche-tested ruggedness for high-current automotive power stages.

For engineers reviewing the IPLU300N04S41R1 datasheet, IPLU300N04S41R1 pinout, IPLU300N04S41R1 application, or IPLU300N04S41R1 equivalent, key selection criteria include its 0.5 K/W R_thJC, 175 °C operating temperature, integrated body diode with 65 ns t_rr, and MSL1 reflow compatibility - critical for traction inverter gate drivers and 48 V mild-hybrid DC-DC converters.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit (FoM), enabling high-efficiency switching in hard-switched topologies. Its gate plateau voltage of 5.6 V supports robust drive margin under transient conditions.

The MOSFET features a thermally enhanced H-PSOF-8-1 package with exposed drain tab for direct PCB thermal coupling, achieving 0.5 K/W junction-to-case resistance. Dynamic parameters - including 9300 pF C_iss, 2070 pF C_oss, and 116 nC Q_g - are specified at V_DD = 20 V, I_D = 300 A, R_G = 3.5 Ω, supporting precise gate driver sizing.

Key Specifications

Pinout & Package

H-PSOF-8-1 is a thermally optimized surface-mount package with 8 terminals and an exposed drain tab on the bottom side for direct PCB copper thermal spreading. The package supports MSL1 reflow up to 260 °C and operates from −55 °C to +175 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IPB180N04S4-02 and IPP65R041C7, IPLU300N04S41R1 uniquely balances 300 A current capacity, 40 V rating, and 1.15 mΩ R_DS(on) in a thermally optimized automotive package - making it optimal for 48 V mild-hybrid traction and high-power OBC output stages where current density and avalanche robustness are primary constraints.

Availability

IPLU300N04S41R1 is available at Aetrix Electronics and suitable for automotive traction inverters, 48 V mild-hybrid DC-DC converters, and on-board chargers requiring stable component supply across extended production lifecycles.

Supply support for IPLU300N04S41R1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-current, high-reliability automotive power conversion - emphasizing low R_DS(on), rugged avalanche performance, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPLU300N04S41R1?

The absolute maximum V_GS is ±20 V. Operation above +10 V provides full enhancement but does not further reduce R_DS(on); exceeding +20 V risks irreversible gate oxide damage. Gate drive circuits must include clamping or Zener protection to prevent transients from violating this limit during switching.

Can IPLU300N04S41R1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.83 → 1.15 mΩ over −60 °C to +175 °C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared copper area to maintain <5 °C inter-die ΔT at full load.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode has t_rr = 65 ns and Q_rr = 85 nC at I_F = 50 A, enabling efficient synchronous rectification in buck-derived topologies up to 150 kHz. However, external Schottky diodes remain preferred for >200 kHz operation due to lower Q_rr.

What thermal interface material is recommended for the drain tab?

A 60–100 µm thick, thermally conductive (≥3 W/m·K), electrically insulating pad (e.g., Bergquist Sil-Pad 1000) is recommended between the exposed drain tab and heatsink. Direct soldering to PCB copper is preferred for lowest R_thJC; if using a heatsink, ensure mechanical pressure ≥50 psi and flatness <50 µm to avoid thermal voids.