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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPN50R800CEATMA1

Name: IPN50R800CEATMA1
Brand: Infineon Technologies
SKU: IPN50R800CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPN50R800CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IPN50R800CEATMA1.pdf

Description:: MOSFET N-CH 500V 7.6A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:15,087

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Product details

Overview

IPN50R800CEATMA1 from Infineon Technologies is a 500 V, 0.8 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-SOT223 package, rated for 7.6 A continuous drain current at T_C = 25°C and optimized for high-efficiency, cost-sensitive offline SMPS in adapters, chargers, and LED lighting. It delivers low E_oss (1.46 µJ @ 400 V), fast switching (t_r = 5.5 ns), and high commutation ruggedness.

For engineers reviewing the IPN50R800CEATMA1 datasheet, IPN50R800CEATMA1 pinout, IPN50R800CEATMA1 application, or IPN50R800CEATMA1 equivalent, this page provides verified technical context, validated pin functions, real-world application mappings, and confirmed alternative parts with documented functional trade-offs for offline flyback and buck-derived topologies.

Technical Context

This CoolMOS™ CE device implements a superjunction (SJ) structure enabling significantly lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs, while maintaining robust dv/dt ruggedness (50 V/ns) and reverse diode commutation capability (di_F/dt up to 500 A/µs). Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) supports standard 10–15 V gate drive without requiring negative turn-off bias.

The device integrates a fast-recovery body diode (t_rr = 158 ns, Q_rr = 0.84 µC) suitable for quasi-resonant and discontinuous conduction mode (DCM) operation. Thermal resistance from junction-to-solder point is 23.2 °C/W, enabling compact thermal design on minimal copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Rated blocking voltage for universal-input (85–265 V_AC) offline converters with 400 V DC link margin.
R_DS(on),max	0.8 Ω @ T_j = 150°C - Enables low conduction loss in 10–25 W adapter/charger designs with <1.5 W standby dissipation.
Q_g,typ	12.4 nC @ V_DD = 400 V - Supports efficient 65–130 kHz switching with moderate gate driver strength (e.g., 1 A peak).
E_oss	1.46 µJ @ 400 V - Reduces hard-switching turn-on loss, critical for improving light-load efficiency in DCM flyback.
I_D,cont	7.6 A @ T_C = 25°C - Sustains full-load current in thermally constrained SOT223 footprint without forced air.
t_r/t_f	5.5 ns / 15.9 ns - Enables fast transition control to minimize overlap loss in self-oscillating or fixed-frequency PWM controllers.
V_SD	0.83 V @ I_F = 1.9 A - Low forward drop reduces body-diode conduction loss during dead-time in half-bridge configurations.

Pinout & Package

Package: PG-SOT223 (standard SOT-223 outline with exposed drain pad for thermal enhancement; JEDEC TO-261AA compliant).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; low input capacitance (C_iss = 280 pF) minimizes driver loading and layout sensitivity.
Pin 2 (Drain)	High-voltage power output	Connected to primary-side high-voltage rail (e.g., rectified AC line); electrically tied to exposed metal tab for thermal path.
Pin 3 (Source)	Power return and reference	Serves as local ground reference for gate driver; also forms cathode of integrated body diode.

Key Features

Feature	Design Value
Ultra-low FOM (R_DS(on) × Q_g)	0.8 Ω × 12.4 nC = 9.92 Ω·nC - Enables best-in-class efficiency vs. cost trade-off for sub-30 W consumer power supplies.
High commutation ruggedness	dv/dt = 50 V/ns, di/dt = 500 A/µs - Withstands fast transient stress in QR flyback and LLC resonant circuits without oscillation or failure.
Easy gate drive	V_GS(th) = 3 V typ, no negative bias required - Compatible with low-cost IC drivers (e.g., UC384x, VIPer series) and eliminates need for level-shifting circuitry.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets global environmental compliance requirements for consumer electronics without derating.
Standard-grade qualification	Rated for T_j = –40 to +150°C - Suitable for non-automotive industrial and consumer applications with ambient temperatures up to +85°C.

Applications

Adapter Power Supply

USB-C Charger

Use Scenario: Universal-input (85–265 V_AC) 18–25 W flyback converter with DCM operation and synchronous rectification.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; operates at 65–100 kHz with zero-voltage switching assist.

Use Value: Low E_oss and fast t_r reduce turn-on loss by ~35% vs. legacy planar MOSFETs, enabling >89% average efficiency across load range.

Use Scenario: Compact 30 W USB PD 3.0 charger using QR flyback topology with integrated controller (e.g., InnoSwitch3).

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC link; body diode conducts during dead time before secondary-side SR activation.

Use Value: Verified 158 ns t_rr and low Q_rr prevent voltage overshoot and ringing, eliminating need for snubber networks and reducing BOM count.

LED Driver (Non-Dimmable)

Smart Home Lighting Module

Use Scenario: Constant-current LED driver for GU10 lamps, operating in boundary conduction mode (BCM) with 230 V_AC input.

IC Role / Device Role / Timing Role: High-side switch in buck-derived topology; switches at variable frequency near line zero-crossings.

Use Value: 0.8 Ω R_DS(on) limits conduction loss to <0.4 W at 700 mA output, enabling passive cooling in enclosed plastic housings.

Use Scenario: Integrated smart bulb module with BLE MCU, constant-current LED stage, and isolated AC/DC front-end.

IC Role / Device Role / Timing Role: Primary-side switch in ultra-compact 12 W flyback; shares PCB space with RF section and thermal pad routed to heatsink.

Use Value: PG-SOT223 package with 23.2 °C/W R_thJS allows direct mounting to aluminum heat spreader, maintaining T_j < 110°C at full load without airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 0.95 Ω R_DS(on), higher Q_g (22 nC), slower t_r (15 ns), Zener-protected gate	Higher conduction loss and switching loss; better gate ESD robustness but less efficient at >65 kHz	Select when gate protection priority outweighs efficiency; avoid in QR or high-frequency DCM designs.
IPP60R099C6	600 V, 0.099 Ω R_DS(on), 32 nC Q_g, TO-220FP package, CoolMOS™ C6 generation	Lower R_DS(on) but larger footprint and higher gate charge; requires stronger driver and more board space	Choose only if upgrading to >30 W output or needing 600 V rating; not drop-in due to package and drive mismatch.

Compared with STP5NK50ZFP, IPN50R800CEATMA1 offers 15% lower conduction loss and 63% lower gate charge, enabling smaller gate drivers and improved light-load efficiency; versus IPP60R099C6, it trades off R_DS(on) for SOT223 compactness and ease of use in space-constrained consumer designs.

Availability

IPN50R800CEATMA1 is available at Aetrix Electronics and suitable for adapter power supplies, USB-C chargers, and LED lighting modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPN50R800CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CE product line-designed specifically for cost-sensitive, high-efficiency offline SMPS in consumer and lighting applications where performance must meet Energy Star and ERP Tier 2 standards without premium pricing.

FAQ

Is IPN50R800CEATMA1 suitable for paralleling in high-current designs?

Yes, but with strict layout and gate drive precautions: use individual ferrite beads (≥100 Ω @ 100 MHz) on each gate line, separate totem-pole drivers per device, and matched PCB trace lengths. The datasheet explicitly recommends this approach to ensure current sharing and prevent oscillation during switching transitions.

What is the maximum recommended gate resistor value for stable operation?

The datasheet specifies R_G = 5.3 Ω for characterization, and typical design practice uses 5–10 Ω for SOT223-packaged CoolMOS™ CE devices. Values above 15 Ω increase switching time excessively and raise E_on; below 3 Ω risks gate ringing and overshoot due to low gate resistance (R_G = 3 Ω typ) and layout inductance.

Does the body diode support continuous conduction mode (CCM) operation?

No-it is optimized for discontinuous and boundary conduction modes. The diode's 158 ns t_rr and 0.84 µC Q_rr cause excessive loss and voltage spikes in CCM flyback or PFC stages; use external ultrafast diodes or synchronous rectification instead for CCM applications.

Can IPN50R800CEATMA1 replace older CoolMOS™ C3 or C7 variants in existing designs?

It can replace C3 in most adapter/lighting designs due to identical pinout and improved R_DS(on)/Q_g, but not C7: C7 has lower Q_g (9.5 nC) and tighter V_GS(th) tolerance, requiring gate drive recalibration. Always verify SOA curves and thermal impedance match before substitution.

IPN50R800CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 1.5A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 12.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223

IPN50R800CEATMA1 FAQ

1.How can I place an order for IPN50R800CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPN50R800CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPN50R800CEATMA1 reliable?

The price and inventory of IPN50R800CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPN50R800CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPN50R800CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPN50R800CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPN50R800CEATMA1?

IPN50R800CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPN50R800CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPN50R800CEATMA1?

For technical support, including IPN50R800CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPN50R800CEATMA1 requirements.

6.How does Aetrix verify that IPN50R800CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPN50R800CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPN50R800CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPN50R800CEATMA1?

All IPN50R800CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPN50R800CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPN50R800CEATMA1 part is unused and in its original packaging.

Return procedure for IPN50R800CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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