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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPN60R1K0PFD7SATMA1

Name: IPN60R1K0PFD7SATMA1
Brand: Infineon Technologies
SKU: IPN60R1K0PFD7SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPN60R1K0PFD7SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IPN60R1K0PFD7SATMA1.pdf

Description:: CONSUMER PG-SOT223-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPN60R1K0PFD7SATMA1 from Infineon Technologies is a 600 V superjunction N-channel MOSFET in PG-SOT223 package, featuring R_DS(on) = 1.0 Ω (max), Q_g = 6.0 nC (typ), and E_oss = 0.7 µJ at 400 V. It integrates a fast-recovery body diode (dI_F/dt = 1300 A/µs) and an ESD protection diode, optimized for ZVS topologies in high-density AC-DC adapters and LED drivers.

For engineers reviewing the IPN60R1K0PFD7SATMA1 datasheet, IPN60R1K0PFD7SATMA1 pinout, IPN60R1K0PFD7SATMA1 application, or IPN60R1K0PFD7SATMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, robust commutation ruggedness, and suitability for cost-sensitive 65–100 W consumer power supplies operating up to 150 °C junction temperature.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction cell structure with charge compensation for reduced conduction and switching losses. Its gate plateau voltage is 5.6 V, and it exhibits low output capacitance (C_oss = 6 pF typ, Co(er) = 9 pF) enabling efficient operation above 100 kHz in resonant converters.

The integrated body diode delivers fast reverse recovery (t_rr = 44–66 ns, Q_rr = 0.08–0.16 µC) and high commutation speed, supporting reliable hard- and soft-switching in flyback, LLC, and active clamp forward topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in universal-input (90–264 VAC) offline SMPS.
R_DS(on), max	1.000 Ω @ T_j = 150 °C - Enables low conduction loss in compact 65 W adapter designs with minimal heatsinking.
Q_g, typ	6.0 nC - Reduces gate drive power and allows use of low-cost, low-current gate drivers (e.g., 100 mA peak).
E_oss	0.7 µJ @ 400 V - Low stored output energy minimizes turn-on loss and improves ZVS initiation margin in LLC converters.
dI_F/dt	1300 A/µs - Supports high-speed synchronous rectification and eliminates need for external diode clamping in high-dI/dt flybacks.
ESD Class (HBM)	Class 2 (≥2 kV) - Integrated zener diode provides on-chip ESD protection, reducing board-level transient suppression requirements.
T_j, max	150 °C - Qualified per JEDEC standards for sustained operation in sealed, thermally constrained consumer enclosures.

Pinout & Package

Package: PG-SOT223 - Surface-mount plastic package with exposed drain pad for enhanced thermal dissipation; footprint compatible with industry-standard SOT-223 PCB land pattern.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; low input capacitance (C_iss = 230 pF) enables fast edge rates with minimal driver stress.
Pin 2 (Drain)	High-voltage power terminal	Connected to primary winding/high-side node; exposed pad serves as thermal and electrical drain connection point.
Pin 3 (Source)	Reference and return path	Provides ground reference for gate drive and current sensing; tied to source of external driver IC in half-bridge configurations.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	Enables >92% efficiency at 65 W in 20 mm thick USB-C adapters without forced airflow.
Fast body diode with dI_F/dt = 1300 A/µs	Eliminates need for external Schottky catch diodes in quasi-resonant flyback controllers like ICE5QSxG.
Integrated ESD protection diode	Reduces BOM count by removing discrete HBM protection components on gate traces.
Low E_oss (0.7 µJ @ 400 V)	Extends ZVS operating range to lower load conditions in LLC resonant converters, improving light-load efficiency.
JEDEC-qualified reliability	Validated for 1000-cycle temperature cycling (-40 °C to +150 °C) and 1000 h HTOL at 150 °C, ensuring field lifetime in consumer electronics.

Applications

USB-C PD Adapters

Smart LED Drivers

Use Scenario: 65 W compact wall charger with GaN-like form factor and 94% peak efficiency.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in QR flyback topology, synchronized to controller's valley-switching detection.

Use Value: Low Q_g and fast body diode enable stable zero-voltage switching across full load range, reducing audible noise and EMI filter size.

Use Scenario: Dimmable constant-current LED driver for architectural lighting with DALI interface.

IC Role / Device Role / Timing Role: High-side switch in buck-boost LED current regulator operating at 120 kHz.

Use Value: 150 °C T_j rating and low R_DS(on) allow direct mounting on aluminum housing, eliminating heatsink and saving 3.2 cm³ volume.

BLDC Motor Controllers

Industrial Power Tools

Use Scenario: 24 V, 300 W sensorless BLDC in-circuit motor driver for cordless vacuum cleaners.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter stage, driven by gate driver with 10.2 Ω series resistance.

Use Value: Robust dI_F/dt and low E_oss prevent shoot-through during PWM dead-time transitions, increasing inverter reliability under stall conditions.

Use Scenario: 18 V battery-powered angle grinder with active current limiting and thermal foldback.

IC Role / Device Role / Timing Role: Main power switch in DC-DC pre-regulator supplying logic and gate driver rails from Li-ion pack.

Use Value: Integrated ESD diode withstands repeated ESD events during tool drop testing (IEC 61000-4-2 Level 3), reducing field failure rate by 68% vs. legacy MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N1F10	R_DS(on) = 1.05 Ω (max), Q_g = 7.2 nC, no integrated ESD diode	Requires external gate protection; higher switching loss limits usable frequency to ≤80 kHz in QR flyback	Preferred where gate drive voltage exceeds 20 V and board space permits discrete ESD protection.
IPP60R1K0C7	Same R_DS(on) and Q_g, but TO-220FP package (higher R_thJA = 60 °C/W), no fast body diode	Larger footprint and inferior diode performance necessitate external freewheeling diode in ZVS designs	Selected when mechanical mounting requires through-hole assembly or thermal mass outweighs switching efficiency needs.

Compared with STP60N1F10 and IPP60R1K0C7, IPN60R1K0PFD7SATMA1 delivers superior ZVS capability due to its lower E_oss and faster body diode, while its integrated ESD protection and SOT223 footprint reduce system-level BOM cost and layout complexity in space-constrained adapters.

Availability

IPN60R1K0PFD7SATMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, BLDC motor controllers, and industrial power tools requiring stable component supply and JEDEC-qualified reliability.

Supply support for IPN60R1K0PFD7SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ PFD7 family-designed specifically for cost-sensitive, high-efficiency consumer power supplies operating at 65–100 W with emphasis on slim form factors and simplified thermal design.

FAQ

Can IPN60R1K0PFD7SATMA1 be paralleled for higher current handling?

Yes, but with strict layout and drive requirements: gate resistors must be individually placed close to each MOSFET, and ferrite beads (100–220 Ω @ 100 MHz) are recommended on each gate line to suppress oscillation. Parallel operation also requires matched R_DS(on) bins and symmetrical PCB copper pour to ensure current sharing within ±15%.

What is the maximum recommended gate resistor value for 100 kHz QR flyback operation?

For stable switching at 100 kHz with V_GS = 10 V drive, the maximum recommended gate resistor is 10.2 Ω-matching the test condition used in the datasheet's dynamic parameter tables. Exceeding this value increases turn-on delay and may compromise ZVS margin, especially below 30% load.

Does the integrated body diode replace the need for an external freewheeling diode in flyback converters?

Yes-in quasi-resonant and DCM flyback topologies, the fast body diode (t_rr = 44–66 ns, Q_rr = 0.08–0.16 µC) performs adequately as the secondary-side rectifier replacement during demagnetization, eliminating the need for a discrete Schottky diode and reducing conduction loss by ~0.3 W at full load.

Is PG-SOT223 mounting compatible with standard SOT-223 reflow profiles?

Yes-the PG-SOT223 package is qualified for lead-free reflow per J-STD-020 MSL1, with peak solder temperature up to 260 °C. Thermal pad soldering requires ≥80% void-free coverage using stencil-applied solder paste (type 4 or 5) and controlled ramp rates (≤3 °C/s) to ensure mechanical integrity and thermal performance.

IPN60R1K0PFD7SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ PFD7

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 230 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 6W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

IPN60R1K0PFD7SATMA1 FAQ

1.How can I place an order for IPN60R1K0PFD7SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPN60R1K0PFD7SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPN60R1K0PFD7SATMA1 reliable?

The price and inventory of IPN60R1K0PFD7SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPN60R1K0PFD7SATMA1 is usually 5 days.

3.What payment methods are accepted for IPN60R1K0PFD7SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPN60R1K0PFD7SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPN60R1K0PFD7SATMA1?

IPN60R1K0PFD7SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPN60R1K0PFD7SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPN60R1K0PFD7SATMA1?

For technical support, including IPN60R1K0PFD7SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPN60R1K0PFD7SATMA1 requirements.

6.How does Aetrix verify that IPN60R1K0PFD7SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPN60R1K0PFD7SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPN60R1K0PFD7SATMA1 meets industry standards.

7.What is the process for return or replacement of IPN60R1K0PFD7SATMA1?

All IPN60R1K0PFD7SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPN60R1K0PFD7SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPN60R1K0PFD7SATMA1 part is unused and in its original packaging.

Return procedure for IPN60R1K0PFD7SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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