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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPN60R1K5PFD7SATMA1

Name: IPN60R1K5PFD7SATMA1
Brand: Infineon Technologies
SKU: IPN60R1K5PFD7SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPN60R1K5PFD7SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IPN60R1K5PFD7SATMA1.pdf

Description:: MOSFET N-CH 600V 3.6A SOT223

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Product details

Overview

IPN60R1K5PFD7SATMA1 from Infineon Technologies is a 600 V, 1.5 Ω R_DS(on) superjunction MOSFET in PG-SOT223 package, featuring integrated fast body diode and ESD protection. It delivers low switching losses (E_oss = 0.5 µJ @ 400 V), high commutation ruggedness (di_F/dt = 1300 A/µs), and is optimized for ZVS topologies in slim AC-DC chargers and LED drivers.

For engineers reviewing the IPN60R1K5PFD7SATMA1 datasheet, IPN60R1K5PFD7SATMA1 pinout, IPN60R1K5PFD7SATMA1 application, or IPN60R1K5PFD7SATMA1 equivalent, key selection criteria include its 650 V V_DS rating, 4.6 nC total gate charge, 1300 A/µs diode commutation speed, and SOT223 thermal resistance of 19.73 °C/W (junction-to-solder point).

Technical Context

This CoolMOS™ PFD7 device implements a superjunction structure with charge compensation for high-voltage operation at low conduction loss. Its integrated fast-recovery body diode (t_rr = 40–59 ns, Q_rr = 0.06–0.12 µC) enables robust hard-switching and zero-voltage switching (ZVS) in flyback and resonant converters.

The MOSFET features a 5.6 V gate plateau voltage and 11.0 Ω intrinsic gate resistance, supporting stable gate drive with minimal external damping. Its 120 V/ns dv/dt ruggedness and 7 mJ single-pulse avalanche energy ensure reliability under transient overvoltage conditions in offline power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Withstands peak line voltages up to 400 V DC bus with safety margin in universal-input SMPS.
R_DS(on) max	1.500 Ω @ T_j = 150°C - Enables <3.6 A continuous drain current with manageable conduction loss in SOT223 footprint.
Q_g typ	4.6 nC - Low gate charge reduces driver power demand and supports >100 kHz switching without excessive gate loss.
E_oss	0.5 µJ @ 400 V - Minimizes turn-off energy loss, critical for efficiency in high-frequency ZVS flyback designs.
di_F/dt	1300 A/µs - Supports fast, controlled body diode commutation in half-bridge and LLC synchronous rectification.
V_GS(th)	3.5–4.5 V - Ensures clean turn-on with standard 5 V or 10 V gate drivers; avoids spurious conduction near noise thresholds.
T_j max	150°C - Rated for sustained operation in thermally constrained consumer power adapters and lighting enclosures.

Pinout & Package

Package: PG-SOT223 (standard SOT-223 outline with exposed drain pad for thermal conduction). Pin 1 = Gate, Pin 2 = Drain (internally connected to exposed pad), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; 11.0 Ω internal resistance stabilizes switching edge and reduces ringing risk.
Pin 2 (Drain)	High-side power terminal	Connected to HV DC bus; electrically and thermally tied to exposed metal pad for low R_thJS (19.73 °C/W).
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Integrated fast body diode	t_rr = 40–59 ns, Q_rr = 0.06–0.12 µC - Reduces snubber losses and EMI in discontinuous conduction mode (DCM) flyback.
ESD-protected gate	HBM Class 2 (≥2 kV) - Eliminates need for external gate ESD clamps in cost-sensitive consumer PCB layouts.
Low R_DS(on) × Q_g FOM	~6.9 Ω·nC - Balances conduction and switching loss for optimal efficiency at 65–130 kHz in adapter applications.
ZVS-optimized output capacitance	C_oss = 4 pF, C_o(er) = 7 pF - Enables soft turn-on with minimal dead-time penalty in resonant topologies.
JEDEC-qualified reliability	Qualified per JEDEC standards - Validated for 10-year field life in consumer-grade power supplies operating at ≤150°C junction.

Applications

USB-C PD Charger

Smart LED Driver

Use Scenario: 65 W compact USB-C power adapter using quasi-resonant flyback with ZVS.

IC Role / Device Role: Primary-side high-voltage switch handling 400 V DC bus and delivering 3.6 A peak primary current.

Use Value: Fast body diode and low E_oss enable >93% efficiency at 100 kHz while maintaining <15 mm board height.

Use Scenario: Dimmable constant-current LED driver for smart bulbs with TRIAC phase-cut input.

IC Role / Device Role: Active clamp switch managing leakage inductance energy and enabling high PF correction.

Use Value: 1300 A/µs di_F/dt ensures reliable commutation during leading-edge dimmer transitions without shoot-through.

BLDC Motor Starter

Industrial Sensor Power Supply

Use Scenario: Low-cost 24 V BLDC fan controller with integrated half-bridge high-side switch.

IC Role / Device Role: High-side N-channel MOSFET driven by bootstrap circuit in 3-phase inverter stage.

Use Value: Integrated zener and ESD diode simplify gate protection, reducing BOM count by two components per phase.

Use Scenario: Isolated 5 V/100 mA auxiliary supply for PLC I/O modules powered from 24–48 V DC bus.

IC Role / Device Role: Primary switch in flyback converter operating at fixed 65 kHz with tight output regulation.

Use Value: 1.5 Ω R_DS(on) and 160 °C/W R_thJA allow full-load operation on minimal 2-layer PCB without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 1.2 Ω R_DS(on), no integrated body diode, TO-220FP package	Requires external fast diode; higher thermal resistance (R_thJA ≈ 65 °C/W) limits power density	Prefer when higher current (>5 A) and discrete diode control are needed; not drop-in for SOT223 layout.
IPP60R1K5C7XKSA1	Same PFD7 die, but in PG-TO220 package with isolated tab; identical R_DS(on), Q_g, E_oss	Higher thermal performance (R_thJA ≈ 40 °C/W), but requires through-hole mounting and isolation clearance	Select for higher-power versions (≥10 W) where SOT223 thermal limit is exceeded; same gate drive and layout logic.

Compared with STP6NK60ZFP and IPP60R1K5C7XKSA1, IPN60R1K5PFD7SATMA1 uniquely combines SOT223 form factor, integrated fast body diode, and JEDEC-qualified reliability-enabling sub-10 mm height designs without external diode or heatsink, unlike the TO-220 alternatives.

Availability

IPN60R1K5PFD7SATMA1 is available at Aetrix Electronics and suitable for USB-C PD chargers, smart LED drivers, BLDC motor starters, and industrial sensor power supplies requiring stable component supply across high-volume consumer production cycles.

Supply support for IPN60R1K5PFD7SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer power adapters, lighting, and motor control applications.

FAQ

What is the maximum continuous drain current for IPN60R1K5PFD7SATMA1 at 100°C case temperature?

The maximum continuous drain current is 2.2 A at T_C = 100°C, limited by junction temperature (T_j ≤ 150°C) and package thermal resistance. This value assumes proper PCB copper area (6 cm² drain pad) and natural convection cooling per Infineon's FR4 test board condition.

Does IPN60R1K5PFD7SATMA1 require an external gate resistor for stable operation?

A gate resistor is recommended but not strictly required due to the device's 11.0 Ω intrinsic gate resistance. For ZVS flyback designs, a 10–22 Ω external resistor optimizes turn-on speed and minimizes gate oscillation without compromising switching loss or EMI performance.

Can this MOSFET be used in parallel configurations?

Yes, but with design precautions: gate ferrite beads or separate totem-pole drivers are recommended per Infineon's guidance to balance dynamic current sharing. Thermal coupling between devices must be minimized, and layout symmetry is critical to avoid current imbalance above 1.5 A per device.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No-the integrated body diode is optimized for commutation in ZVS flyback and active-clamp topologies, not continuous conduction. Its Q_rr and t_rr are insufficient for high-frequency synchronous rectification; dedicated SR controllers with GaN or low-Q_rr MOSFETs are required for that function.

IPN60R1K5PFD7SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™PFD7

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 169 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 6W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-3

IPN60R1K5PFD7SATMA1 FAQ

1.How can I place an order for IPN60R1K5PFD7SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPN60R1K5PFD7SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPN60R1K5PFD7SATMA1 reliable?

The price and inventory of IPN60R1K5PFD7SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPN60R1K5PFD7SATMA1 is usually 5 days.

3.What payment methods are accepted for IPN60R1K5PFD7SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPN60R1K5PFD7SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPN60R1K5PFD7SATMA1?

IPN60R1K5PFD7SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPN60R1K5PFD7SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPN60R1K5PFD7SATMA1?

For technical support, including IPN60R1K5PFD7SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPN60R1K5PFD7SATMA1 requirements.

6.How does Aetrix verify that IPN60R1K5PFD7SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPN60R1K5PFD7SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPN60R1K5PFD7SATMA1 meets industry standards.

7.What is the process for return or replacement of IPN60R1K5PFD7SATMA1?

All IPN60R1K5PFD7SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPN60R1K5PFD7SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPN60R1K5PFD7SATMA1 part is unused and in its original packaging.

Return procedure for IPN60R1K5PFD7SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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