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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPN80R2K0P7ATMA1

Name: IPN80R2K0P7ATMA1
Brand: Infineon Technologies
SKU: IPN80R2K0P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPN80R2K0P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IPN80R2K0P7ATMA1.pdf

Description:: MOSFET N-CHANNEL 800V 3A SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:3,000

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Product details

Overview

IPN80R2K0P7ATMA1 from Infineon is an 800V N-channel superjunction MOSFET in PG-SOT223 package, optimized for hard/soft-switching flyback and PFC stages. It delivers R_DS(on) = 2.0 Ω (max), Q_g = 9 nC (typ), E_oss = 0.85 µJ at 500V, V_GS(th) = 3 V (typ), and integrated Zener-protected gate, targeting LED lighting, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPN80R2K0P7ATMA1 datasheet, IPN80R2K0P7ATMA1 pinout, IPN80R2K0P7ATMA1 application, or IPN80R2K0P7ATMA1 equivalent, key selection criteria include 800V blocking capability, low gate charge for high-frequency switching, tight V_GS(th) tolerance (±0.5V), thermal resistance R_thJS = 19.5 °C/W, and JEDEC industrial qualification.

Technical Context

This CoolMOS™ P7 device employs superjunction architecture to achieve best-in-class figure-of-merit (R_DS(on) × E_oss) among 800V DPAK-equivalent MOSFETs. Its 3 V gate threshold with ±0.5 V variation enables reliable turn-on with standard 5 V logic drivers and simplifies parallel operation without gate resistors.

Dynamic performance is characterized by C_iss = 175 pF, C_oss = 4.0 pF, and fast switching times (t_r = 8 ns, t_f = 20 ns) under 400 V/0.94 A conditions with 33 Ω gate resistor. The integrated Zener diode provides HBM Class 1C ESD protection, reducing production yield loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Enables direct use in 400 V DC-link applications with >100% safety margin against transients.
R_DS(on), max	2.0 Ω at T_j = 25°C - Delivers 3 A continuous drain current with <6.4 W power dissipation at T_C = 25°C.
Q_g, typ	9 nC - Reduces gate drive power and enables efficient operation up to 200 kHz in flyback converters.
E_oss	0.85 µJ at 500 V - Low output charge minimizes turn-off losses and improves light-load efficiency in PFC and flyback.
V_GS(th), typ	3 V with ±0.5 V variation - Ensures consistent turn-on across temperature and unit-to-unit, supporting single-supply gate driving.
R_thJS	19.5 °C/W - Limits junction-to-solder-point temperature rise to ≤125°C under 6.4 W dissipation, enabling compact heatsinking.

Pinout & Package

IPN80R2K0P7ATMA1 uses the PG-SOT223 package (standard SOT-223 outline with exposed drain tab). The drain is connected to the metal tab for enhanced thermal conduction and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts 0–20 V gate-source voltage; integrated Zener clamps transient overvoltage.
Pin 2 / Tab	Drain	Main high-voltage power terminal; electrically and thermally connected to exposed copper tab for PCB heat spreading.
Pin 3	Source	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
Best-in-class R_DS(on) × E_oss	Enables higher efficiency in 65–200 kHz flyback and boost PFC without compromising ruggedness.
V_GS(th) = 3 V ± 0.5 V	Eliminates need for gate voltage boosting in 3.3 V/5 V microcontroller-driven designs and improves parallel stability.
Integrated Zener ESD protection	Reduces external gate protection components and lowers field failure rate in automated assembly environments.
Fully JEDEC-qualified for industrial temp range	Guarantees operation from −55°C to +150°C junction temperature without derating in harsh ambient conditions.

Applications

LED Lighting Driver

Low-Power AC/DC Adapter

Use Scenario: Primary-side switch in 15–30 W isolated flyback LED drivers for commercial downlights.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–130 kHz with valley-switching control.

Use Value: Low E_oss and tight V_GS(th) enable stable burst-mode dimming and <85 mW no-load consumption.

Use Scenario: Main switch in universal-input 5–12 W USB charging adapters.

IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant flyback with integrated controller feedback.

Use Value: 2.0 Ω R_DS(on) and 9 nC Q_g support >88% efficiency at full load while meeting CoC Tier 2 requirements.

Auxiliary Power Supply

PFC Stage (Consumer)

Use Scenario: Standby power converter supplying 5 V/100 mA to MCU and sensors in industrial HMIs.

IC Role / Device Role / Timing Role: 800 V primary switch in discontinuous conduction mode (DCM) flyback.

Use Value: Robust dv/dt ruggedness (100 V/ns) prevents false triggering during line surges in unregulated input conditions.

Use Scenario: Boost switch in active PFC front-end of 30–60 W consumer audio amplifiers and set-top boxes.

IC Role / Device Role / Timing Role: High-efficiency, low-loss switching element in continuous conduction mode (CCM) boost converter.

Use Value: Low C_oss (4.0 pF) and Co(er) = 7 pF reduce turn-off losses and improve THD performance at 50/60 Hz line frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 0.08 Ω (lower), but V_DS = 55 V - not voltage-compatible.	Only suitable for ≤60 V DC-link topologies; cannot replace in 400 V bus applications.	Select only if redesigning for lower voltage and higher current; not a drop-in replacement.
IPP60R190C7	Same 600 V rating, R_DS(on) = 0.19 Ω, but lacks integrated Zener and has higher E_oss (1.2 µJ).	Requires external gate protection and exhibits higher switching loss in high-frequency PFC.	Prefer IPN80R2K0P7ATMA1 when 800 V rating, ESD robustness, and low E_oss are critical.

Compared with STP80NF55-08 and IPP60R190C7, IPN80R2K0P7ATMA1 uniquely combines 800 V rating, integrated Zener protection, and industry-leading R_DS(on) × E_oss, making it optimal for space-constrained, high-reliability flyback and auxiliary power designs where voltage margin and ESD immunity are non-negotiable.

Availability

IPN80R2K0P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, low-power AC/DC adapters, and auxiliary power supplies requiring stable component supply across extended product lifecycles.

Supply support for IPN80R2K0P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ P7 series was engineered specifically for high-efficiency, high-voltage SMPS in consumer, lighting, and industrial auxiliary power, emphasizing ease-of-use, ruggedness, and production yield.

FAQ

What is the maximum continuous drain current for IPN80R2K0P7ATMA1?

The maximum continuous drain current is 3 A at T_C = 25°C and 1.9 A at T_C = 100°C, limited by junction temperature (T_j ≤ 150°C) and thermal resistance R_thJA = 75 °C/W on a 40 mm × 40 mm copper pad. Derating is required above 25°C case temperature per the power dissipation curve in the datasheet.

Does IPN80R2K0P7ATMA1 require external gate protection?

No - it integrates a Zener diode for gate-source ESD protection rated at HBM Class 1C (≥1 kV), eliminating the need for external TVS diodes in most industrial and consumer applications. Gate drive circuits still require appropriate series resistance (e.g., 10–33 Ω) to dampen ringing and limit peak current.

Can IPN80R2K0P7ATMA1 be used in parallel configurations?

Yes - its tight V_GS(th) tolerance (±0.5 V) and positive R_DS(on) temperature coefficient enable stable current sharing. However, Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation and ensure simultaneous switching under high di/dt conditions.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA is constrained by both thermal and avalanche limits: maximum V_DS drops to ~400 V at 1 A DC, and pulse operation is limited to 6 ms at 2 A and 300 V. The device supports single-pulse avalanche energy of 6 mJ (at I_D = 0.4 A, V_DD = 50 V), verified per JEDEC JESD24-1.

IPN80R2K0P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 940mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 175 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 6.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223

IPN80R2K0P7ATMA1 FAQ

1.How can I place an order for IPN80R2K0P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPN80R2K0P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPN80R2K0P7ATMA1 reliable?

The price and inventory of IPN80R2K0P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPN80R2K0P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPN80R2K0P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPN80R2K0P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPN80R2K0P7ATMA1?

IPN80R2K0P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPN80R2K0P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPN80R2K0P7ATMA1?

For technical support, including IPN80R2K0P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPN80R2K0P7ATMA1 requirements.

6.How does Aetrix verify that IPN80R2K0P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPN80R2K0P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPN80R2K0P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPN80R2K0P7ATMA1?

All IPN80R2K0P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPN80R2K0P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPN80R2K0P7ATMA1 part is unused and in its original packaging.

Return procedure for IPN80R2K0P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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