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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP011N03LF2SAKSA1

Name: IPP011N03LF2SAKSA1
Brand: Infineon Technologies
SKU: IPP011N03LF2SAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP011N03LF2SAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP011N03LF2SAKSA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP011N03LF2SAKSA1 from Infineon is an N-channel logic-level StrongIRFET™2 power MOSFET rated at 30 V, 210 A continuous drain current, and 1.05 mΩ maximum R_DS(on) at V_GS = 10 V. It features 100% avalanche testing, 175 °C junction rating, and PG-TO220-3 package for high-current DC/DC converters and motor drive half-bridges.

For engineers reviewing the IPP011N03LF2SAKSA1 datasheet, IPP011N03LF2SAKSA1 pinout, IPP011N03LF2SAKSA1 application, or IPP011N03LF2SAKSA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, Q_g = 108 nC (0–4.5 V), thermal resistance R_thJC = 0.4 °C/W, and integrated body diode recovery t_rr = 36 ns.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction and switching losses in synchronous rectification and high-frequency buck converters. Its logic-level gate threshold (1.35–2.35 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device integrates a fast-recovery body diode (Q_rr = 160 nC, t_rr = 36 ns) and supports pulsed drain currents up to 840 A. Thermal design leverages a low R_thJC of 0.4 °C/W and 175 °C max junction temperature for sustained high-power operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V system rails and automotive battery inputs
R_DS(on) max	1.05 mΩ at V_GS = 10 V - Enables <1.1 W conduction loss at 100 A
I_D cont	210 A at T_C = 25 °C - Supports high-current power stages with minimal parallel devices
Q_g (0–4.5 V)	108 nC - Determines gate driver power requirement and switching speed in 100–500 kHz converters
t_rr	36 ns - Reduces reverse recovery loss and EMI in synchronous FET applications
R_thJC	0.4 °C/W - Allows >300 W power dissipation with moderate heatsinking
V_GS(th)	1.35–2.35 V - Ensures reliable turn-on with standard logic-level microcontrollers and PWM ICs

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts logic-level gate drive (3.3 V/5 V compatible); requires <108 nC charge for full enhancement
Pin 2 / Tab	Drain	Main high-side current path; thermally coupled to heatsink via metal tab; electrically tied to drain potential
Pin 3	Source	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver boost stages in 5 V control systems
100% avalanche tested	Rated for single-pulse E_AS = 2514 mJ - ensures robustness against inductive switching transients in motor drives
175 °C junction rating	Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient
Pb-free & halogen-free	Complies with RoHS and IEC61249‑2‑21 - meets industrial and automotive environmental compliance requirements
Low Q_gd/Q_gs ratio	Q_gd = 31 nC, Q_gs = 47 nC - improves hard-switching immunity and reduces Miller-induced shoot-through risk

Applications

Motor Drive Half-Bridge

High-Current DC/DC Converter

Use Scenario: High-efficiency 24 V BLDC motor inverter stage with 150 A peak phase current.

IC Role / Device Role / Timing Role: Low-side switching FET in asymmetric half-bridge topology; conducts during PWM low period and recirculates current via body diode.

Use Value: R_DS(on) ≤ 1.05 mΩ minimizes I²R loss at 150 A; t_rr = 36 ns limits diode reverse recovery energy and EMI generation.

Use Scenario: 48 V-to-12 V synchronous buck converter delivering 120 A to server VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET; replaces Schottky diode to reduce conduction loss and improve efficiency above 200 kHz.

Use Value: Q_g = 108 nC enables fast turn-on with standard gate drivers; 175 °C rating sustains operation under transient load spikes.

Automotive Body Control Module

Industrial Power Supply OR-ing

Use Scenario: 12 V/24 V load switch for headlight or HVAC actuator with overcurrent protection.

IC Role / Device Role / Timing Role: High-side power switch controlled by MCU GPIO; handles inrush and stall currents up to 210 A.

Use Value: V_GS(th) = 1.35–2.35 V ensures guaranteed turn-on from 3.3 V MCU outputs; 100% avalanche test covers load dump events.

Use Scenario: Redundant 24 V input OR-ing in telecom power shelf with hot-swap capability.

IC Role / Device Role / Timing Role: Ideal diode replacement; conducts forward current and blocks reverse current with ultra-low forward drop.

Use Value: R_DS(on) = 0.91 mΩ typ. yields <2.3 mV drop at 25 A - lower than Schottky alternatives and reduces heat sink size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB011N03L G	PG-TO263-3 package; R_DS(on) = 1.1 mΩ; Q_g = 110 nC; same V_DS, I_D, and thermal specs	Suitable for surface-mount PCBs with thermal vias; not interchangeable in through-hole designs	Select when board space and automated assembly require D²PAK instead of TO220
STL220N3LLH6	30 V, R_DS(on) = 1.2 mΩ, Q_g = 125 nC, 175 °C rated; STPower trench MOSFET	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss at >100 A	Choose if dual-sourcing across Infineon/ST is required and 0.15 mΩ R_DS(on) penalty is acceptable

Compared with IPB011N03LG and STL220N3LLH6, IPP011N03LF2SAKSA1 offers the lowest R_DS(on) and gate charge in TO220 form factor, making it optimal for thermally constrained, high-current through-hole designs where minimal conduction and switching loss are critical.

Availability

IPP011N03LF2SAKSA1 is available at Aetrix Electronics and suitable for motor drives, high-current DC/DC converters, and automotive body control modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP011N03LF2SAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 family, engineered for high-current, high-efficiency power conversion in automotive, industrial, and computing applications where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 163 A at T_C = 100 °C with V_GS = 10 V. This reflects thermal de-rating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and must be used with appropriate heatsinking to maintain safe junction temperature.

Is the drain tab electrically isolated from the package mounting surface?

No - the metal tab is internally connected to the Drain (Pin 2). It is not electrically isolated and must be mounted to a heatsink using insulating hardware (e.g., mica washer + thermal grease) if the heatsink is grounded or at a different potential.

Does this MOSFET support gate drive from a 3.3 V microcontroller directly?

Yes - with V_GS(th) as low as 1.35 V and full enhancement achievable at 4.5 V, the device turns on strongly with 3.3 V logic. However, R_DS(on) rises to ~1.5 mΩ at 3.3 V, so conduction loss increases; verify thermal margin at target load current.

What is the significance of the "F2" suffix in the ordering code?

The "F2" denotes the second-generation StrongIRFET™2 process - featuring improved R_DS(on)/Q_g trade-off, tighter parameter distribution, and enhanced avalanche ruggedness versus the original StrongIRFET™1 series.

IPP011N03LF2SAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Ta), 210A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.05mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 336 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-U05

IPP011N03LF2SAKSA1 FAQ

1.How can I place an order for IPP011N03LF2SAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP011N03LF2SAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP011N03LF2SAKSA1 reliable?

The price and inventory of IPP011N03LF2SAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP011N03LF2SAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP011N03LF2SAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP011N03LF2SAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP011N03LF2SAKSA1?

IPP011N03LF2SAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP011N03LF2SAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP011N03LF2SAKSA1?

For technical support, including IPP011N03LF2SAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP011N03LF2SAKSA1 requirements.

6.How does Aetrix verify that IPP011N03LF2SAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP011N03LF2SAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP011N03LF2SAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP011N03LF2SAKSA1?

All IPP011N03LF2SAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP011N03LF2SAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP011N03LF2SAKSA1 part is unused and in its original packaging.

Return procedure for IPP011N03LF2SAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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