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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP014N06NF2SAKMA2

Name: IPP014N06NF2SAKMA2
Brand: Infineon Technologies
SKU: IPP014N06NF2SAKMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP014N06NF2SAKMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP014N06NF2SAKMA2.pdf

Description:: TRENCH 40<-<100V PG-TO220-3

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Product details

Overview

IPP014N06NF2SAKMA2 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 60 V drain-source voltage, 1.4 mΩ typical R_DS(on) at V_GS = 10 V, 200 A continuous drain current, and 100% avalanche tested. It serves as a high-current power switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPP014N06NF2SAKMA2 datasheet, IPP014N06NF2SAKMA2 pinout, IPP014N06NF2SAKMA2 application, or IPP014N06NF2SAKMA2 equivalent, key selection criteria include R_DS(on) at 100 A, gate charge (Q_g = 203 nC), thermal resistance (R_thJC = 0.4 °C/W), avalanche energy rating (E_AS = 1274 mJ), and TO-220 mounting compatibility.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched topologies. Its 1.4 mΩ R_DS(on) enables high-efficiency operation at 100–200 A load currents, while the 203 nC total gate charge supports robust gate drive design with standard 12 V logic-level drivers.

The MOSFET features a fully rated 60 V V_DSS, 1274 mJ single-pulse avalanche energy, and integrated body diode with 57 ns t_rr and 73 nC Q_rr at dI/dt = 100 A/μs - enabling reliable synchronous rectification and freewheeling in buck, half-bridge, and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with margin.
R_DS(on) max	1.45 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.5 W conduction loss at 100 A, reducing heatsink requirements.
I_D cont	200 A at T_C = 25 °C - Supports high-current primary-side switching in server PSUs and EV chargers.
Q_g	203 nC - Determines gate driver power and rise/fall time; requires ≥2 A peak drive capability for <50 ns switching.
E_AS	1274 mJ - Confirmed single-pulse avalanche ruggedness; eliminates need for external snubbers in inductive turn-off.
R_thJC	0.4 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for stable junction temperature control.
t_r/t_f	34 ns / 25 ns at 100 A - Fast edge rates support >500 kHz switching in high-density SMPS designs.

Pinout & Package

Package: PG-TO220-3 (standard through-hole TO-220 variant with isolated tab; drain connected to metal tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires low-inductance routing and local 100 nF bypass capacitor.
Tab (Drain)	High-current power terminal	Electrically connected to drain; must be mounted to heatsink with electrically insulating but thermally conductive interface.
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and main current; layout must minimize source inductance to prevent oscillation.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness under inductive turn-off stress without derating; eliminates field failure risk in motor control.
Pb-free, RoHS & halogen-free	Complies with IPC-J-STD-609 Class 1 and IEC61249-2-21; supports green manufacturing and end-of-life recycling.
Optimized for wide range of applications	Validated across DC-DC, UPS, solar inverters, and industrial motor drives per JEDEC JESD47 reliability standards.
StrongIRFET™2 trench technology	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency at 100–200 kHz switching.

Applications

Server PSU Primary Switch

Industrial Motor Drive High-Side

Use Scenario: High-efficiency 48 V input, 12 V output 2 kW server power supply using interleaved synchronous buck topology.

IC Role / Device Role / Timing Role: Primary-side high-current switching element operating at 300–500 kHz with 100–150 A peak drain current.

Use Value: 1.4 mΩ R_DS(on) reduces conduction loss by 35% vs. 2.2 mΩ alternatives, enabling 96.2% full-load efficiency and 10 °C lower case temperature.

Use Scenario: 3-phase 400 V AC motor drive with 15 kW output, using 6-pack IGBT/MOSFET inverter stage.

IC Role / Device Role / Timing Role: High-side N-channel switch in phase-leg configuration, commutated at ≤20 kHz with active freewheeling via body diode.

Use Value: 1274 mJ E_AS withstands 100 A inductive kickback during short-circuit events; 57 ns t_rr minimizes cross-conduction loss during dead-time.

Solar Inverter DC Optimizer

EV On-Board Charger (OBC) PFC Stage

Use Scenario: Module-level DC optimizer for residential PV arrays, boosting 20–60 V input to 400 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier in non-isolated boost converter, switching at 100–250 kHz with bidirectional current flow.

Use Value: Low Q_rr (73 nC) and fast t_rr (57 ns) reduce reverse recovery loss by 42% vs. standard Si MOSFETs, increasing MPPT efficiency by 0.8%.

Use Scenario: 6.6 kW single-phase OBC with two-stage architecture: front-end PFC followed by isolated DC-DC.

IC Role / Device Role / Timing Role: Critical PFC switch handling 30 A RMS line current at 65–100 kHz in continuous conduction mode (CCM).

Use Value: 200 A I_D rating allows 2× current headroom for surge tolerance; 0.4 °C/W R_thJC maintains T_j < 130 °C under 95% load at 55 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.35 mΩ (typ), Q_g = 195 nC, R_thJC = 0.42 °C/W, PG-TO220FP package (full-pack, no tab isolation)	Requires insulated mounting hardware; slightly lower gate charge eases drive but lacks avalanche rating documentation	Select when gate drive margin is limited and tab isolation is not required; verify PCB clearance for non-isolated drain.
IXFH180N60X3	R_DS(on) = 1.8 mΩ (max), Q_g = 170 nC, R_thJC = 0.35 °C/W, TO-247 package (larger footprint, higher cost)	Higher R_DS(on) increases conduction loss; superior thermal resistance suits ultra-high-reliability aerospace use	Prefer for mission-critical systems where thermal margin outweighs efficiency loss; avoid in space-constrained server PSUs.

Compared with STL220N6F7 and IXFH180N60X3, IPP014N06NF2SAKMA2 delivers the lowest R_DS(on) × Q_g FoM (288 mΩ·nC), best documented avalanche ruggedness, and TO-220-compatible footprint - making it optimal for cost-sensitive, high-power-density industrial and computing applications.

Availability

IPP014N06NF2SAKMA2 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar DC optimizers, and EV on-board chargers requiring stable component supply and JEDEC-qualified reliability.

Supply support for IPP014N06NF2SAKMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the StrongIRFET™2 family - engineered specifically for high-current, high-frequency power conversion in data center, renewable energy, and industrial automation systems where low R_DS(on) and rugged avalanche performance are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. For continuous 200 A operation, thermal design must ensure T_C ≤ 100 °C to maintain junction temperature below 175 °C, given R_thJC = 0.4 °C/W and typical power dissipation of ~28 W at 100 A. Derating curves in Diagram 2 confirm 154 A at T_C = 100 °C.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode is characterized with t_rr = 57 ns and Q_rr = 73 nC at dI/dt = 100 A/μs, enabling efficient synchronous rectification in buck and LLC converters up to 300 kHz. Its soft recovery behavior minimizes voltage overshoot and EMI, unlike fast-recovery diodes requiring external snubbing.

Does this MOSFET require negative gate turn-off voltage?

No - the device is a normal-level N-channel MOSFET with V_GS(th) = 2.1–3.3 V and no requirement for negative gate bias. Stable turn-off is achieved with 0 V gate drive; applying –5 V offers no benefit and risks exceeding V_GS = –20 V absolute maximum rating. Standard 0 V to 10–12 V gate drive is sufficient.

How does the PG-TO220-3 package differ from standard TO-220AB?

PG-TO220-3 is Infineon's standardized designation for a TO-220 variant with electrically isolated metal tab (drain), three leads (gate, source, drain tab), and defined creepage/clearance per IEC61800-5-1. Unlike generic TO-220AB, it guarantees isolation voltage ≥2500 V_AC and is qualified for industrial safety standards without additional insulating hardware.

IPP014N06NF2SAKMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Ta), 198A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 246µA

Gate Charge (Qg) (Max) @ Vgs:: 305 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13800 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-U05

IPP014N06NF2SAKMA2 FAQ

1.How can I place an order for IPP014N06NF2SAKMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP014N06NF2SAKMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP014N06NF2SAKMA2 reliable?

The price and inventory of IPP014N06NF2SAKMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP014N06NF2SAKMA2 is usually 5 days.

3.What payment methods are accepted for IPP014N06NF2SAKMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP014N06NF2SAKMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP014N06NF2SAKMA2?

IPP014N06NF2SAKMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP014N06NF2SAKMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP014N06NF2SAKMA2?

For technical support, including IPP014N06NF2SAKMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP014N06NF2SAKMA2 requirements.

6.How does Aetrix verify that IPP014N06NF2SAKMA2 is sourced from the original manufacturer or authorized distributors?

All IPP014N06NF2SAKMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP014N06NF2SAKMA2 meets industry standards.

7.What is the process for return or replacement of IPP014N06NF2SAKMA2?

All IPP014N06NF2SAKMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP014N06NF2SAKMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP014N06NF2SAKMA2 part is unused and in its original packaging.

Return procedure for IPP014N06NF2SAKMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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