Infineon Technologies IPP016N08NF2SAKMA1

Overview

IPP016N08NF2SAKMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 80 V V_DS, 1.65 mΩ R_DS(on) max at V_GS = 10 V, and 196 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, low Q_g (170 nC), and Q_oss (199 nC), optimized for high-efficiency synchronous rectification and motor drive half-bridge legs.

For engineers reviewing the IPP016N08NF2SAKMA1 datasheet, IPP016N08NF2SAKMA1 pinout, IPP016N08NF2SAKMA1 application, or IPP016N08NF2SAKMA1 equivalent, key selection criteria include its ultra-low R_DS(on), fast switching (t_r = 72 ns, t_f = 44 ns), integrated body diode with Q_rr = 383 nC, and thermal resistance R_thJC = 0.5 °C/W - critical for high-current DC-DC converters and industrial inverters.

Technical Context

This MOSFET employs a trench-gate silicon process with optimized charge balancing for reduced conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers, while the 4.5 V gate plateau supports stable Miller region control during hard switching.

The device integrates a robust intrinsic body diode with V_SD = 0.88 V (typ.) at I_F = 100 A and t_rr = 48 ns, enabling efficient synchronous rectification without external Schottky diodes. Thermal design is supported by a low junction-to-case resistance (0.5 °C/W) and JEDEC-qualified reliability up to T_j = 175 °C.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (lead-free, RoHS-compliant, halogen-free); tab is Drain (electrically connected to Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IPB015N08N5ATMA1 and IPP020N08N5AKMA1, IPP016N08NF2SAKMA1 delivers optimal balance of ultra-low R_DS(on), proven through-hole mechanical robustness, and industry-standard thermal interface - making it preferred for high-reliability industrial motor controllers and battery systems where serviceability and field repair matter.

Availability

IPP016N08NF2SAKMA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-current DC-DC converters, and battery protection circuits requiring stable component supply and long-term manufacturability.

Supply support for IPP016N08NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the StrongIRFET™ 2 Power-Transistor family, engineered specifically for high-efficiency, high-reliability power conversion in industrial motor drives, server PSUs, and renewable energy inverters - emphasizing ruggedness, low-loss switching, and thermal resilience.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device supports continuous operation up to T_C = 175 °C, as validated per JEDEC qualification. At this temperature, the continuous drain current derates to 151 A (V_GS = 10 V). Thermal design must ensure the tab-to-heatsink interface resistance remains ≤0.15 °C/W to maintain safe junction temperature under full load.

Is the body diode suitable for synchronous rectification without external components?

Yes - the integrated body diode has characterized t_rr = 48 ns and Q_rr = 383 nC at I_F = 100 A, enabling reliable synchronous rectification in buck and LLC converters up to 50 kHz. No external Schottky diode is required if gate timing accounts for its reverse recovery behavior.

Does this MOSFET require negative gate voltage for reliable turn-off?

No - the gate threshold voltage range (2.2–3.8 V) and low gate leakage (<100 nA at V_GS = 20 V) allow robust turn-off with 0 V gate bias. However, applying –5 V enhances noise immunity in high-dV/dt environments such as inverter outputs or motor phases.

Can IPP016N08NF2SAKMA1 be paralleled with identical units for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (normalized increase of ~1.8× from 25 °C to 175 °C) ensures inherent current sharing. For stable parallel operation, use matched gate resistors (≤1.5 Ω), symmetrical PCB layout, and shared heatsink mounting to minimize thermal imbalance.