Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP018N03LF2SAKSA1

Name: IPP018N03LF2SAKSA1
Brand: Infineon Technologies
SKU: IPP018N03LF2SAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP018N03LF2SAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP018N03LF2SAKSA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,973

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP018N03LF2SAKSA1 from Infineon is a 30 V, 128 A N-channel logic-level MOSFET in PG-TO220-3 package, featuring 1.8 mΩ R_DS(on) at V_GS = 10 V, 74 nC total gate charge, and 175 °C maximum junction temperature. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drives.

For engineers reviewing the IPP018N03LF2SAKSA1 datasheet, IPP018N03LF2SAKSA1 pinout, IPP018N03LF2SAKSA1 application, or IPP018N03LF2SAKSA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, 100% avalanche ruggedness, thermal performance on FR4 PCBs, and compatibility with logic-level gate drivers in high-efficiency power stages.

Technical Context

This StrongIRFET™ 2 device uses trench-based silicon technology optimized for low conduction and switching losses in 30 V systems. Its gate threshold voltage (1.35–2.35 V) ensures reliable turn-on with 3.3 V or 5 V logic, while the 46 nC Q_g(0V–4.5V) enables fast, efficient switching at high frequencies up to 500 kHz.

The MOSFET integrates a robust body diode with 23 ns reverse recovery time and 79 nC Q_rr, supporting synchronous rectification without external Schottky diodes. Thermal resistance R_thJC = 0.9 °C/W allows sustained 128 A operation when mounted on ≥6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus applications with margin against transients.
R_DS(on) max	1.8 mΩ at V_GS = 10 V - Enables ≤2 W conduction loss at 128 A, critical for high-current DC-DC phases.
I_D continuous	128 A at T_C = 25 °C - Supports high-power motor control and server VRMs with minimal paralleling.
Q_g(0–4.5 V)	46 nC - Determines gate driver current requirement (~1.8 A peak for 25 ns rise time), enabling compact driver design.
E_AS	448 mJ - Withstands single-pulse inductive energy without failure, essential for unclamped inductive switching.
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating below 100 °C case temp.
Q_oss	1240 pF - Low output capacitance reduces turn-off loss and improves light-load efficiency in hard-switched topologies.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS/halogen-free compliant). Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level voltage (≥3.3 V) to fully enhance channel; requires <1.8 Ω series gate resistor for optimal EMI/loss trade-off.
Pin 2 (Drain) + Tab	High-side power terminal	Primary current path during conduction; tab must be soldered to ≥6 cm² copper pour for thermal management per datasheet layout.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; low-inductance connection critical to minimize V_GS ringing during switching.

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully at V_GS = 4.5 V, eliminating need for level-shifters in 3.3 V microcontroller-based systems.
100% avalanche rated	Guarantees single-pulse ruggedness to 448 mJ, enabling use in non-clamped flyback or buck-boost converters without snubbers.
Low Q_g/R_DS(on) ratio	46 nC / 1.8 mΩ = 25.6 kΩ·nC - Balances switching speed and conduction loss better than legacy 30 V MOSFETs.
Enhanced body diode	23 ns t_rr and 0.88 V V_SD at 100 A enable efficient synchronous rectification in LLC and phase-shifted full-bridge topologies.
Pb-free & halogen-free	Complies with IEC61249-2-21 and RoHS, supporting green manufacturing and end-of-life recycling requirements.

Applications

Server VRM Phase Legs

Industrial BLDC Motor Inverters

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in data center servers.

IC Role / Device Role / Timing Role: Main synchronous FET in multiphase VRM, switching at 300–500 kHz with precise dead-time control.

Use Value: 1.8 mΩ R_DS(on) reduces conduction loss by >35% vs. 2.5 mΩ alternatives, directly improving VRM efficiency at 100+ A loads.

Use Scenario: 3-phase inverter driving 5–10 kW permanent magnet motors in CNC machines and pumps.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET module replacement, operating at 8–16 kHz PWM.

Use Value: 175 °C rating permits operation at 110 °C case temperature without derating, reducing heatsink size by 25% in enclosed cabinets.

Automotive DC-DC Converters

Telecom Rectifier Modules

Use Scenario: 12 V to 48 V bidirectional converter in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side of phase-shifted full-bridge, conducting 100+ A continuously.

Use Value: 74 nC Q_oss minimizes turn-off loss during zero-voltage switching transitions, increasing ZVS range by 15% at 200 kHz.

Use Scenario: Primary-side switch in 3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 80 A peak current with repetitive avalanche stress during clamp cycle.

Use Value: 448 mJ E_AS eliminates need for external clamping circuits, simplifying BOM and improving reliability over 10-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N03LG	R_DS(on) = 1.7 mΩ (typ), Q_g = 49 nC, PG-TO263-3 package, no integrated Kelvin source.	Requires larger PCB footprint and lacks Kelvin source for accurate gate drive; better suited for lower-frequency, higher-current designs.	Prefer when board space allows TO263 mounting and gate driver layout supports non-Kelvin routing.
STL220N3LLH6	R_DS(on) = 2.2 mΩ (max), Q_g = 42 nC, PowerFLAT 5x6 package, 100% avalanche tested but not JEDEC qualified.	Surface-mount only; limited to ≤80 A continuous due to thermal constraints; suitable for space-constrained consumer power supplies.	Choose for compact SMT designs where 128 A rating is not required and JEDEC qualification is non-mandatory.

Compared with IPB017N03LG and STL220N3LLH6, IPP018N03LF2SAKSA1 delivers the lowest R_DS(on) in through-hole format with JEDEC-qualified ruggedness and Kelvin-source-compatible pinout-making it optimal for industrial and telecom systems demanding proven reliability at full rated current.

Availability

IPP018N03LF2SAKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, automotive DC-DC converters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPP018N03LF2SAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

This part belongs to the StrongIRFET™ 2 family-designed specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and automotive applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

Is IPP018N03LF2SAKSA1 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.35–2.35 V and guaranteed R_DS(on) ≤ 2.5 mΩ at V_GS = 4.5 V, it fully enhances using standard 3.3 V GPIO outputs when paired with a low-impedance gate driver stage. No level shifter is needed for typical MCU-driven half-bridge configurations.

What is the maximum continuous drain current at 100 °C case temperature?

Per datasheet Figure 2, the continuous drain current drops to 99 A at T_C = 100 °C. This de-rating accounts for thermal resistance and safe operating area limits; actual usable current depends on PCB copper area and ambient airflow, with 6 cm² cooling enabling ≥90 A at 100 °C case.

Does the PG-TO220-3 package have an electrically isolated tab?

No. The tab is internally connected to the drain terminal (Pin 2), as confirmed in the "Package Outlines" section and pin assignment diagram. Electrical isolation requires insulating hardware (e.g., silicone pad + shoulder washer) when mounting to heatsinks referenced to other potentials.

Can IPP018N03LF2SAKSA1 replace IPP020N03LG in existing designs?

Yes, with minor layout review. Both are 30 V N-channel TO220 devices, but IPP018N03LF2SAKSA1 offers 10% lower R_DS(on) (1.8 mΩ vs. 2.0 mΩ) and 46 nC Q_g(0–4.5 V) vs. 52 nC-reducing both conduction loss and gate drive power. Pinout and footprint are identical.

IPP018N03LF2SAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Ta), 128A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 143 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-U05

IPP018N03LF2SAKSA1 FAQ

1.How can I place an order for IPP018N03LF2SAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP018N03LF2SAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP018N03LF2SAKSA1 reliable?

The price and inventory of IPP018N03LF2SAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP018N03LF2SAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP018N03LF2SAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP018N03LF2SAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP018N03LF2SAKSA1?

IPP018N03LF2SAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP018N03LF2SAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP018N03LF2SAKSA1?

For technical support, including IPP018N03LF2SAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP018N03LF2SAKSA1 requirements.

6.How does Aetrix verify that IPP018N03LF2SAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP018N03LF2SAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP018N03LF2SAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP018N03LF2SAKSA1?

All IPP018N03LF2SAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP018N03LF2SAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP018N03LF2SAKSA1 part is unused and in its original packaging.

Return procedure for IPP018N03LF2SAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …