Infineon Technologies IPP019N08NF2SAKMA1

Overview

IPP019N08NF2SAKMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, optimized for high-current switching in DC-DC converters and motor drives. It delivers 80 V V_DS, 1.9 mΩ R_DS(on) max at V_GS = 10 V, 191 A continuous drain current at T_C = 25 °C, and is 100% avalanche tested for ruggedness in industrial power stages.

For engineers reviewing the IPP019N08NF2SAKMA1 datasheet, IPP019N08NF2SAKMA1 pinout, IPP019N08NF2SAKMA1 application, or IPP019N08NF2SAKMA1 equivalent, key selection criteria include low conduction loss (1.9 mΩ), high pulsed current capability (764 A), gate charge profile (Q_G = 124 nC, Q_OSS = 145 nC), and thermal resistance (R_thJC = 0.6 °C/W) for thermally constrained designs.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_d(on) = 21 ns, t_f = 26 ns) and low gate charge (Q_G = 124 nC). Its 80 V rating and 146 A diode forward current support bidirectional energy recovery in synchronous rectification topologies.

The MOSFET features a Kelvin-source–enabled layout with tab-connected drain, enabling low-inductance PCB mounting and stable gate drive under high di/dt conditions. Its V_GS(th) of 2.2–3.8 V ensures robust turn-on with standard 5 V or 10 V logic-level drivers without requiring level-shifting circuitry.

Key Specifications

Pinout & Package

Package: PG-TO220-3 with isolated tab (drain-connected), designed for through-hole mounting and direct heatsink interface. Thermal path optimized via metal tab; no insulating washer required when mounted to grounded heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V MOSFET applications.

Compared with STL220N8F7AG and IXFH180N08X4, IPP019N08NF2SAKMA1 offers the lowest Q_OSS/R_DS(on) ratio among TO-220–based 80 V MOSFETs, making it optimal for compact, high-frequency, thermally constrained power stages where PCB area and switching loss are critical.

Availability

IPP019N08NF2SAKMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, solar microinverters, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for IPP019N08NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the StrongIRFET™ 2 family-designed specifically for high-efficiency, high-current switching in industrial and computing power supplies where low R_DS(on), ruggedness, and thermal performance are primary requirements.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPP019N08NF2SAKMA1 has a specified maximum junction temperature (T_j) of 175 °C per JEDEC qualification. Continuous operation must maintain T_j ≤ 175 °C under worst-case ambient, power dissipation, and heatsink conditions-verified using R_thJC = 0.6 °C/W and R_thCA values from the thermal characterization data.

Is the drain tab electrically isolated from the PCB mounting surface?

No-the metal tab is internally connected to Pin 2 (Drain) and is not electrically isolated. When mounted to a heatsink, the tab must either be insulated from chassis ground or intentionally bonded to system ground depending on topology. Use of insulating pads or shoulder washers is required if the heatsink is grounded and drain is not referenced to ground.

Does this MOSFET support gate drive from a 5 V microcontroller GPIO?

Yes-its V_GS(th) range (2.2–3.8 V) ensures reliable turn-on with 5 V logic, but full R_DS(on) specification (1.9 mΩ) requires V_GS ≥ 10 V. For optimal conduction loss and thermal margin, a dedicated gate driver (e.g., TC4427 or LM5113) delivering ≥10 V is recommended in high-current applications.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.89–1.2 V at 100 A and t_rr = 44 ns-lower forward drop than most 80 V SiC Schottkys but slower than GaN or SiC diodes. It is sufficient for synchronous rectification in sub-300 kHz topologies but not recommended for >500 kHz ZVS designs where ultrafast recovery is mandatory.