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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP020N06NAKSA1

Name: IPP020N06NAKSA1
Brand: Infineon Technologies
SKU: IPP020N06NAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP020N06NAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP020N06NAKSA1.pdf

Description:: MOSFET N-CH 60V 29A/120A TO220-3

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Product details

Overview

IPP020N06NAKSA1 from Infineon Technologies is an N-channel 60 V, 2.0 mΩ logic-level power MOSFET in PG-TO220-3 package, rated for 120 A continuous drain current at T_C = 25 °C and optimized for high-efficiency synchronous rectification in SMPS. It features 100% avalanche tested ruggedness, 420 mJ single-pulse avalanche energy, and 119 nC output charge (Q_OSS), enabling robust operation in hard-switched DC-DC converters.

For engineers reviewing the IPP020N06NAKSA1 datasheet, IPP020N06NAKSA1 pinout, IPP020N06NAKSA1 application, or IPP020N06NAKSA1 equivalent, key selection criteria include R_DS(on) ≤ 2.0 mΩ at V_GS = 10 V, Q_G = 106 nC, thermal resistance R_thJC = 0.7 K/W, and integrated fast-recovery body diode with t_rr = 76–122 ns and Q_rr = 97 nC.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 2.1–3.3 V) supports direct drive from 3.3 V or 5 V controllers, and its low Q_gd/Q_gs ratio (19/35 nC) improves switching controllability in high-frequency topologies.

The MOSFET integrates a monolithic body diode with controlled reverse recovery characteristics-V_SD = 0.9–1.2 V at I_F = 100 A and T_j = 25 °C-and is qualified per JEDEC J-STD-20/JESD22 for industrial power applications requiring stable thermal performance up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input DC-DC stages and PoE-powered systems
R_DS(on), max	2.0 mΩ at V_GS = 10 V - Enables <1.2 W conduction loss at 120 A, critical for high-current secondary-side sync rectifiers
I_D, cont	120 A at T_C = 25 °C - Supports >1 kW power delivery with minimal heatsink requirements
Q_OSS	119 nC - Determines turn-off energy loss in hard-switched converters; enables efficient operation up to 500 kHz
t_rr	76–122 ns - Limits diode reverse recovery overshoot and EMI in synchronous buck/flyback designs
R_thJC	0.7 K/W - Allows direct mounting to heatsink with predictable junction-to-case thermal path for thermal design
E_AS	420 mJ - Confirmed avalanche ruggedness for unclamped inductive switching in LLC resonant converters

Pinout & Package

IPP020N06NAKSA1 is housed in PG-TO220-3 package with isolated tab (drain-connected), standard lead pitch, and through-hole mounting. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Low-side reference node; connects to ground or output rail return path in sync rectifier configurations
Pin 2 (Gate)	Control electrode	Accepts 0–10 V logic-level drive; low 2.4 Ω gate resistance enables fast edge control with minimal external driver loading
Pin 3 (Drain / Tab)	High-side power terminal + thermal interface	Electrically and thermally coupled to metal tab; requires insulating washer when mounted to grounded heatsink

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_gd ratio (106/19 nC) and 4.5 V gate plateau enable precise timing control in high-side or low-side FET roles
100% avalanche tested	Guaranteed single-pulse E_AS ≥ 420 mJ at I_D = 100 A ensures reliability during transient overloads in server VRMs
Superior thermal resistance	R_thJC = 0.7 K/W allows 214 W power dissipation at T_C = 25 °C-enabling compact thermal design without forced air
JEDEC-qualified	Complies with J-STD-20 reflow profile and JESD22-A108 temperature cycling for industrial-grade board assembly
Halogen-free & RoHS	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for environmentally compliant power supply manufacturing

Applications

Server VRM Secondary Side

Industrial 48 V DC-DC Converter

Use Scenario: High-current, high-efficiency step-down conversion in 1U server power supplies delivering >800 W to CPU/GPU rails.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes in multiphase buck converters operating at 300–600 kHz.

Use Value: Reduces conduction loss by >40% vs. 3 mΩ alternatives, lowering junction temperature rise by 15 °C under full load.

Use Scenario: Isolated DC-DC module for factory automation PLCs requiring 24 V/30 A output from 48 V bus.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology with 100 kHz switching frequency and zero-voltage switching assist.

Use Value: Enables 95.2% peak efficiency due to 2.0 mΩ R_DS(on) and 119 nC Q_OSS, meeting IEC 62368-1 thermal safety limits.

Telecom Rectifier Module

EV Onboard Charger Auxiliary Supply

Use Scenario: -48 V telecom rectifier with hot-swap capability and redundant parallel operation.

IC Role / Device Role / Timing Role: OR-ing FET in back-to-back configuration for fault isolation and reverse current blocking.

Use Value: Body diode V_SD ≤ 1.2 V and t_rr ≤ 122 ns minimize forward drop and reverse recovery spikes during switchover events.

Use Scenario: Auxiliary 12 V/10 A supply derived from 400 V battery in bidirectional OBC systems.

IC Role / Device Role / Timing Role: Synchronous rectifier in flyback converter operating across wide input range (150–450 V_DC) with variable frequency control.

Use Value: Avalanche rating (420 mJ) withstands voltage transients during battery disconnection events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF6AG	R_DS(on) = 2.2 mΩ (typ), Q_G = 115 nC, TO-220FP package with insulated tab	Slightly higher gate charge increases turn-on loss in >400 kHz designs; lower thermal resistance (R_thJC = 0.6 K/W)	Preferred where space-constrained PCB layout favors FP package but requires same thermal interface prep
IXFH120N06T2	R_DS(on) = 2.1 mΩ (max), Q_G = 120 nC, TO-247AC package, no avalanche rating specified	Larger footprint and no guaranteed E_AS spec; higher gate drive power required	Consider only if existing thermal/mechanical design mandates TO-247 and avalanche testing is not required

Compared with STL220N6LF6AG and IXFH120N06T2, IPP020N06NAKSA1 delivers the lowest R_DS(on) × Q_G product (212 mΩ·nC), best-in-class avalanche ruggedness, and JEDEC qualification-making it optimal for high-reliability, high-frequency SMPS where thermal margin and transient immunity are critical.

Availability

IPP020N06NAKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, telecom rectifier modules, and EV onboard charger auxiliary supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPP020N06NAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-current, high-frequency switching power supplies where low R_DS(on), fast switching, and avalanche robustness are mandatory.

FAQ

What is the maximum gate-source voltage rating for IPP020N06NAKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this limit risks permanent gate oxide damage. Recommended drive voltage is 0 V (off) to 10 V (fully enhanced), with 4.5 V gate plateau confirmed in gate charge curves-ensuring reliable turn-on with 5 V microcontrollers without level-shifting.

Does IPP020N06NAKSA1 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic fast-recovery body diode rated for 120 A continuous forward current. Key specs: V_SD = 0.9–1.2 V at I_F = 100 A and T_j = 25 °C; reverse recovery time t_rr = 76–122 ns; reverse recovery charge Q_rr = 97 nC-optimized for low-loss synchronous rectification in buck and flyback topologies.

Can IPP020N06NAKSA1 be used in linear mode (as a pass transistor)?

No-it is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows limited DC capability (≤ 20 A at V_DS = 10 V), and thermal runaway risk is high above 100 °C junction temperature. Designed exclusively for switched-mode applications with defined duty cycle and cooling.

Is the PG-TO220-3 package of IPP020N06NAKSA1 electrically insulated?

No-the metal tab is internally connected to the drain terminal and is not electrically isolated. When mounting to a heatsink, a mica or ceramic insulator plus shoulder washer must be used to prevent shorting. The package outline (Rev. 2.3) confirms non-isolated construction per standard PG-TO220-3 mechanical specification.

IPP020N06NAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 143µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7800 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP020N06NAKSA1 FAQ

1.How can I place an order for IPP020N06NAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP020N06NAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP020N06NAKSA1 reliable?

The price and inventory of IPP020N06NAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP020N06NAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP020N06NAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP020N06NAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP020N06NAKSA1?

IPP020N06NAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP020N06NAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP020N06NAKSA1?

For technical support, including IPP020N06NAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP020N06NAKSA1 requirements.

6.How does Aetrix verify that IPP020N06NAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP020N06NAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP020N06NAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP020N06NAKSA1?

All IPP020N06NAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP020N06NAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP020N06NAKSA1 part is unused and in its original packaging.

Return procedure for IPP020N06NAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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