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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP020N06NXKSA1

Name: IPP020N06NXKSA1
Brand: Infineon Technologies
SKU: IPP020N06NXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP020N06NXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP020N06NXKSA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP020N06NXKSA1 from Infineon Technologies is an N-channel 60 V, 2.0 mΩ typ. R_DS(on) OptiMOS™ power MOSFET in PG-TO220-3 package, rated for 120 A continuous drain current at T_C = 25 °C and 100% avalanche tested. It delivers high-efficiency synchronous rectification in SMPS, with Q_g = 106 nC, Q_oss = 119 nC, and low thermal resistance R_thJC = 0.7 K/W.

For engineers reviewing the IPP020N06NXKSA1 datasheet, IPP020N06NXKSA1 pinout, IPP020N06NXKSA1 application, or IPP020N06NXKSA1 equivalent, key selection criteria include R_DS(on) at 100 A, gate charge profile for hard-switched and synchronous FET operation, avalanche energy rating (E_AS = 420 mJ), and thermal performance under high-current conduction in industrial DC-DC converters.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-frequency switching in primary-side and secondary-side SMPS stages. Its low R_DS(on) × Q_g figure-of-merit (212 Ω·nC) supports reduced conduction and switching losses in 100–500 kHz topologies.

The device integrates a fast, soft-recovery body diode (t_rr = 76–122 ns, Q_rr = 97 nC) and is qualified per JEDEC J-STD-20/JESD22 for industrial temperature range (−55 °C to +175 °C), enabling use in thermally constrained server VRMs and telecom rectifiers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input bus and 12 V output synchronous buck applications
R_DS(on) max	2.0 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.2 W conduction loss at 100 A, critical for high-current VRMs
Q_g	106 nC - Gate drive energy requirement determines driver sizing and switching speed in hard-switched PFC stages
E_AS	420 mJ - Single-pulse avalanche capability ensures robustness during transient overvoltage events in unclamped inductive loads
R_thJC	0.7 K/W - Junction-to-case thermal resistance enables direct heatsink mounting for >200 W power dissipation at T_C = 25 °C
Q_oss	119 nC - Output charge directly impacts turn-off loss and zero-voltage switching (ZVS) feasibility in resonant LLC converters
t_r/t_f	45 ns / 19 ns - Fast switching transitions reduce overlap loss in high-frequency synchronous rectifiers

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS/halogen-free compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, electrically connected to package backside	Must be mounted to heatsink with electrically insulating thermal interface; carries full load current and defines thermal path
Source	Reference node for gate drive and current sensing	Low-inductance connection required for stable gate control and accurate high-side current monitoring
Gate	Control terminal for channel modulation	High-impedance input requiring low-impedance gate driver to achieve specified t_d(on)/t_d(off) and minimize Miller-induced shoot-through risk

Key Features

Feature	Design Value
Optimized for SMPS synchronous rectification	Low Q_g/Q_oss ratio (106/119 ≈ 0.89) enables efficient ZVS operation in LLC and phase-shifted full-bridge converters
100% avalanche tested	Guarantees single-pulse E_AS ≥ 420 mJ across production lot, eliminating need for external clamping in flyback snubbers
Superior thermal resistance	R_thJC = 0.7 K/W allows 214 W power dissipation at T_C = 25 °C - 3× higher than typical TO-220 MOSFETs
JEDEC-qualified for target applications	Validated per J-STD-20 reflow and JESD22-A108 temperature cycling - suitable for automotive-grade industrial assembly without derating
Low gate threshold voltage	V_GS(th) = 2.1–3.3 V enables reliable turn-on with 5 V logic-level drivers in auxiliary power rails

Applications

Server VRM

Telecom Rectifier

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 300 A).

IC Role / Device Role / Timing Role: Synchronous FET in low-side position, conducting during freewheeling interval with minimal R_DS(on)-dominated loss.

Use Value: 2.0 mΩ R_DS(on) reduces conduction loss by >40% vs. 3.5 mΩ alternatives, lowering junction temperature rise and improving phase current sharing accuracy.

Use Scenario: 48 V to 12 V intermediate bus converter in 48 V telecom systems with strict efficiency targets (>96% at full load).

IC Role / Device Role / Timing Role: Primary-side switch in hard-switched forward topology operating at 200 kHz with active clamp.

Use Value: 420 mJ E_AS rating eliminates need for active clamp snubber, simplifying layout and reducing component count while maintaining reliability under line surge conditions.

Industrial UPS Inverter

EV Onboard Charger

Use Scenario: Bidirectional DC-AC inverter stage in 3-phase 400 V industrial UPS with regenerative braking capability.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, handling reverse recovery of freewheeling diodes during commutation.

Use Value: Soft-recovery body diode (Q_rr = 97 nC, t_rr = 76 ns) minimizes voltage overshoot and EMI during forced commutation, reducing snubber losses by ~18%.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW AC-DC OBC operating in LLC resonant mode with variable frequency control.

IC Role / Device Role / Timing Role: High-current rectifying element replacing Schottky diodes in center-tapped transformer output stage.

Use Value: Q_oss = 119 nC enables reliable ZVS down to 100 kHz, cutting switching loss by 65% compared to discrete SiC diodes in same footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ (typ), Q_g = 112 nC, R_thJC = 0.85 K/W	Slightly higher conduction loss and thermal resistance; lower avalanche rating (E_AS = 350 mJ)	Acceptable where board-level thermal margin exists and avalanche stress is limited to <300 mJ
IRFB4115PBF	R_DS(on) = 3.2 mΩ (max), Q_g = 145 nC, no JEDEC qualification for industrial temp cycling	Higher conduction and switching loss; not validated for extended temperature cycling per JESD22-A108	Only suitable for cost-sensitive, non-automotive industrial designs with relaxed thermal and reliability requirements

Compared with STL220N6F7 and IRFB4115PBF, IPP020N06NXKSA1 offers superior thermal performance (0.7 K/W vs. ≥0.85 K/W), higher avalanche robustness (420 mJ), and tighter R_DS(on) distribution-critical for parallel operation in multi-phase VRMs and high-reliability telecom rectifiers.

Availability

IPP020N06NXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP020N06NXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-efficiency, high-current switching in server, telecom, and industrial power supplies where low R_DS(on), low Q_g, and rugged avalanche performance are mandatory.

FAQ

Is IPP020N06NXKSA1 suitable for synchronous rectification in LLC resonant converters?

Yes. With Q_oss = 119 nC and R_DS(on) = 1.8 mΩ (typ) at 100 A, it achieves reliable zero-voltage switching down to 100 kHz in LLC secondaries. Its soft-recovery body diode (t_rr = 76–122 ns) further suppresses voltage spikes during dead-time commutation, reducing EMI and snubber losses.

What is the maximum continuous drain current at T_C = 100 °C?

The datasheet specifies I_D = 120 A at both T_C = 25 °C and T_C = 100 °C under V_GS = 10 V, due to its low R_DS(on) temperature coefficient and robust thermal design. Derating is not required for conduction current up to 100 °C case temperature in properly heatsinked TO-220-3 layouts.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (R_G) is required to control dV/dt and prevent oscillation, especially in hard-switched topologies. The internal gate resistance is 1.6–2.4 Ω; external R_G = 3–10 Ω is recommended to balance switching speed and EMI, matching the 3 Ω external resistor used in the datasheet's switching time test conditions.

Can IPP020N06NXKSA1 replace IPP036N06N in existing designs?

Yes, with performance improvement: IPP020N06NXKSA1 has 1.3× lower R_DS(on) (2.0 mΩ vs. 2.6 mΩ) and 15% lower Q_g (106 nC vs. 124 nC). Thermal and pinout compatibility is identical (PG-TO220-3), but gate drive strength must be verified due to higher peak gate current demand from lower C_iss (7800 pF vs. 9200 pF).

IPP020N06NXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 143µA

Gate Charge (Qg) (Max) @ Vgs:: 124 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9750 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP020N06NXKSA1 FAQ

1.How can I place an order for IPP020N06NXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP020N06NXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP020N06NXKSA1 reliable?

The price and inventory of IPP020N06NXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP020N06NXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP020N06NXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP020N06NXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP020N06NXKSA1?

IPP020N06NXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP020N06NXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP020N06NXKSA1?

For technical support, including IPP020N06NXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP020N06NXKSA1 requirements.

6.How does Aetrix verify that IPP020N06NXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP020N06NXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP020N06NXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP020N06NXKSA1?

All IPP020N06NXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP020N06NXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP020N06NXKSA1 part is unused and in its original packaging.

Return procedure for IPP020N06NXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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