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Infineon Technologies IPP023N03LF2SAKSA1

Part No.:
IPP023N03LF2SAKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP023N03LF2SAKSA1.pdf
Description:
MOSFET N-CH 30V 75A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,000

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Product details

Overview

IPP023N03LF2SAKSA1 from Infineon is an N-channel logic-level MOSFET in PG-TO220-3 package, rated for 30 V VDS, 2.35 mΩ RDS(on) at VGS = 10 V, 121 A continuous drain current, and 175 °C junction temperature - optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IPP023N03LF2SAKSA1 datasheet, IPP023N03LF2SAKSA1 pinout, IPP023N03LF2SAKSA1 application, or IPP023N03LF2SAKSA1 equivalent, key selection criteria include low gate charge (Qg = 39 nC), avalanche ruggedness (EAS = 176 mJ), thermal resistance (RthJC = 1.4 °C/W), and RoHS/halogen-free compliance for high-reliability power switching designs.

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve ultra-low RDS(on) while maintaining fast switching (tr = 57 ns, tf = 9.3 ns) and robust body diode performance (trr = 18 ns, Qrr = 51 nC). It supports logic-level drive (VGS(th) = 1.35–2.35 V) and operates up to 175 °C junction temperature.

Designed for synchronous rectification and high-current switching, it features 100% unclamped inductive switching (UIS) tested, integrated source inductance minimized via optimized leadframe geometry, and gate plateau voltage of 3.4 V - enabling stable PWM control with standard 4.5 V logic drivers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - maximum blocking voltage for 24 V system rails and 12 V/24 V automotive auxiliary loads
RDS(on) max2.35 mΩ at VGS = 10 V, ID = 70 A - enables <1.7 W conduction loss at 80 A in TO-220 footprint
ID cont121 A at TC = 25 °C - supports high-current buck stages without paralleling
Qg39 nC (0–10 V) - reduces gate driver power demand and switching losses in 100–500 kHz SMPS
RthJC1.4 °C/W - allows >100 W dissipation with modest heatsinking (ΔT = 140 °C at 100 W)
EAS176 mJ - withstands repetitive inductive turn-off stress in motor drives and solenoid controls
VGS(th)1.35–2.35 V - ensures full enhancement with 3.3 V or 5 V microcontroller GPIO

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating, RoHS/halogen-free compliant).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputLow-impedance gate terminal; requires <1.8 Ω external series resistance to damp ringing during fast switching
Tab (Drain)Main power outputElectrically connected to drain; serves as primary heat path to heatsink - must be insulated if mounting to grounded chassis
Pin 3 (Source)Reference returnCommon return for gate drive and load current; connects directly to PCB ground plane for minimal loop inductance

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V - eliminates need for gate boosters in 3.3 V/5 V control systems
100% UIS testedGuarantees single-pulse avalanche energy ≥176 mJ - critical for reliability in inductive load switching
175 °C rated junctionEnables operation in sealed enclosures or high-ambient environments without derating below 121 A
Pb-free & halogen-freeComplies with IEC61249-2-21 and RoHS - meets global environmental and safety requirements for industrial OEMs
Optimized body diodetrr = 18 ns, Qrr = 51 nC - minimizes reverse recovery loss and EMI in synchronous rectifier applications

Applications

DC-DC Buck ConverterBrushless DC Motor Driver

Use Scenario: Primary high-side switch in 24 V input, 5–12 V output, 50–100 A industrial buck converter.

IC Role / Device Role / Timing Role: Main power switch handling continuous 100 A conduction and 300 kHz PWM switching.

Use Value: 2.35 mΩ RDS(on) cuts conduction loss by >40% vs. legacy 3.5 mΩ TO-220 MOSFETs, improving efficiency from 92% to 94.5% at full load.

Use Scenario: Low-side switch in 3-phase BLDC inverter for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: Synchronous freewheeling path with fast body diode recovery (trr = 18 ns).

Use Value: Reduced switching loss and diode reverse recovery energy lowers MOSFET temperature rise by 12 °C at 20 kHz PWM, extending lifetime in thermally constrained modules.

Server VRM Phase LegIndustrial Power Supply Sync Rectifier

Use Scenario: High-current phase-leg switch in 48 V–12 V server VRM delivering up to 120 A per phase.

IC Role / Device Role / Timing Role: High-side FET in interleaved multiphase topology with 500 kHz switching frequency.

Use Value: 39 nC total gate charge enables efficient drive with low-power gate drivers (e.g., TI UCC27531), reducing driver BOM cost and layout complexity.

Use Scenario: Secondary-side synchronous rectifier in 1 kW telecom PSU with LLC resonant topology.

IC Role / Device Role / Timing Role: Low-VDS rectifying switch replacing Schottky diodes in 12 V output rail.

Use Value: 0.86 V typical VSD and 90 A continuous diode rating allow >1.2 W reduction in rectifier loss vs. 40 V Schottky, improving full-load efficiency by 0.4%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N3LLH6RDS(on) = 2.2 mΩ @ 10 V, Qg = 42 nC, same TO-220FP package but non-isolated tabLacks 100% UIS testing; lower thermal margin due to higher RthJC (1.7 °C/W)Preferable only where tab isolation is unnecessary and avalanche stress is absent
IXTP120N04S2VDS = 40 V, RDS(on) = 3.2 mΩ @ 10 V, Qg = 33 nC, TO-220AB packageHigher voltage rating trades off on-resistance; not logic-level (VGS(th) = 2.0–4.0 V)Suitable for 36 V systems requiring margin, but requires 5 V gate drive assurance

Compared with STL220N3LLH6 and IXTP120N04S2, IPP023N03LF2SAKSA1 delivers superior thermal performance (1.4 °C/W), guaranteed avalanche ruggedness, and true logic-level compatibility - making it optimal for compact, high-reliability 24–30 V power stages where board space and thermal headroom are constrained.

Availability

IPP023N03LF2SAKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing under JEDEC-qualified manufacturing.

Supply support for IPP023N03LF2SAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and security solutions, with over 30 years of MOSFET innovation and industrial-grade qualification expertise.

This part belongs to the StrongIRFET™ 2 family - engineered specifically for high-current, high-frequency power conversion in industrial and computing applications where low RDS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum safe operating temperature for IPP023N03LF2SAKSA1?

The device is rated for junction temperatures up to 175 °C, with continuous operation validated at TC = 100 °C and derated linearly above that point. Thermal design must maintain TJ ≤ 175 °C using RthJC = 1.4 °C/W and appropriate heatsink interface resistance - verified via transient thermal impedance curves in Figure 4 of the datasheet.

Is IPP023N03LF2SAKSA1 suitable for synchronous rectification?

Yes - its low VSD (0.86 V typ.), fast body diode (trr = 18 ns), and 90 A continuous diode current rating make it well-suited for secondary-side synchronous rectification in LLC and phase-shifted full-bridge topologies operating up to 300 kHz.

Does this MOSFET require a gate resistor for stability?

A gate resistor of 1.0–2.2 Ω is recommended between driver output and Gate (Pin 1) to suppress high-frequency oscillation caused by gate-drain Miller capacitance (Crss = 175 pF) and PCB trace inductance - especially critical in hard-switched topologies above 200 kHz.

How does the PG-TO220-3 package differ from standard TO-220AB?

PG-TO220-3 features an electrically isolated drain tab (no internal metal connection between tab and leads), enabling direct heatsink mounting without insulating pads - unlike TO-220AB where the tab is internally connected to Drain and requires isolation hardware for grounded heatsinks.

IPP023N03LF2SAKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
StrongIRFET™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta), 121A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.35mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3400 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-U05

IPP023N03LF2SAKSA1 FAQ

1.How can I place an order for IPP023N03LF2SAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP023N03LF2SAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP023N03LF2SAKSA1 reliable?

The price and inventory of IPP023N03LF2SAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP023N03LF2SAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP023N03LF2SAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP023N03LF2SAKSA1 transactions.

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4.How is shipping managed for IPP023N03LF2SAKSA1?

IPP023N03LF2SAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP023N03LF2SAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP023N03LF2SAKSA1?

For technical support, including IPP023N03LF2SAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP023N03LF2SAKSA1 requirements.

6.How does Aetrix verify that IPP023N03LF2SAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP023N03LF2SAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP023N03LF2SAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP023N03LF2SAKSA1?

All IPP023N03LF2SAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP023N03LF2SAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP023N03LF2SAKSA1 part is unused and in its original packaging.

Return procedure for IPP023N03LF2SAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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