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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP023N08N5AKSA1

Name: IPP023N08N5AKSA1
Brand: Infineon Technologies
SKU: IPP023N08N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP023N08N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP023N08N5AKSA1.pdf

Description:: MOSFET N-CH 80V 120A TO220-3

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Product details

Overview

IPP023N08N5AKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3 package, designed for high-efficiency DC-DC conversion and synchronous rectification. It delivers 80 V V_DS, 2.3 mΩ R_DS(on) max at V_GS = 10 V, 120 A continuous drain current, and is 100% avalanche tested for ruggedness in hard-switching industrial power supplies.

For engineers reviewing the IPP023N08N5AKSA1 datasheet, IPP023N08N5AKSA1 pinout, IPP023N08N5AKSA1 application, or IPP023N08N5AKSA1 equivalent, key selection criteria include gate charge (Q_g = 133 nC), output charge (Q_oss = 156 nC), thermal resistance (R_thJC = 0.4 K/W), and its optimized FOM for high-frequency operation in server VRMs and telecom rectifiers.

Technical Context

This OptiMOS™ 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 10 V gate drive, and its low Q_gd/Q_g ratio (28–42 nC / 133–166 nC) enables clean turn-off with minimal Miller-induced oscillation.

The integrated body diode exhibits t_rr = 85–170 ns and Q_rr = 202–404 nC under 40 V reverse bias and 100 A forward current, making it suitable for synchronous rectifier operation where reverse recovery loss must be minimized in buck converters and LLC resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input bus applications with 20 % margin
R_DS(on), max	2.3 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 100 A, critical for high-current VRMs
I_D, cont	120 A @ T_C = 25 °C - Supports high-power single-phase POLs without paralleling
Q_g	133 nC - Low gate drive energy requirement for 500 kHz–1 MHz switching in digital PWM controllers
R_thJC	0.4 K/W - Allows 300 W dissipation with ≤120 K temperature rise from case to junction
E_AS	674 mJ - Withstands single-pulse inductive energy in motor drive freewheeling or hot-swap circuits
Q_oss	156 nC - Reduces capacitive turn-on loss in hard-switched ZVS-limited topologies

Pinout & Package

Delivered in PG-TO220-3 package with isolated tab (Drain-connected). Standard through-hole mounting with vertical heatsink interface. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires 10 V drive for full enhancement; RG = 1.2–1.8 Ω internal
Pin 2 / Tab	Drain	Main high-side current path; thermally coupled to heatsink; electrically tied to package tab
Pin 3	Source	Power return node; referenced to driver ground; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
Optimized gate charge × R_DS(on) FOM	2.3 mΩ × 133 nC = 306 mΩ·nC - Enables >95 % efficiency in 48 V–12 V buck converters at 1 MHz
100 % unclamped inductive avalanche rated	E_AS = 674 mJ - Eliminates need for external snubbers in flyback or half-bridge freewheeling
Low Q_gd/Q_g ratio	21–32 % - Improves controllability during Miller plateau and reduces risk of shoot-through
JEDEC J-STD-020 MSL1 rating	Reflow-compatible up to 260 °C - Supports automated PCB assembly without moisture sensitivity concerns

Applications

Server Voltage Regulator Module (VRM)

Telecom Rectifier Module

Use Scenario: High-current, multi-phase 48 V–1 V step-down conversion for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: High-side synchronous FET in interleaved buck stage; switched at 500 kHz–1 MHz with digital controller.

Use Value: 2.3 mΩ R_DS(on) and 133 nC Q_g minimize both conduction and switching losses, enabling >94 % peak efficiency at 200 A per phase.

Use Scenario: Primary-side synchronous rectification in 48 V telecom AC/DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: Low-side sync rectifier replacing Schottky diode; driven complementary to primary switch.

Use Value: Integrated body diode with t_rr < 170 ns and Q_rr < 404 nC reduces reverse recovery loss by >60 % vs. discrete diode solution.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Half-bridge leg in 24–48 V BLDC inverter for HVAC blowers and servo drives.

IC Role / Device Role / Timing Role: Low-side switching element; handles pulsed current up to 480 A with 10 µs pulse width.

Use Value: 674 mJ E_AS rating ensures robustness against IGBT desaturation events and inductive kickback during fault conditions.

Use Scenario: Boost switch in 3.3 kW two-stage OBC with interleaved PFC and LLC DC/DC.

IC Role / Device Role / Timing Role: High-current, high-frequency boost FET operating at 100–200 kHz with SiC diode clamping.

Use Value: 0.4 K/W R_thJC allows direct mounting to cold plate, sustaining 120 A continuous current without derating at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 2.2 mΩ, Q_g = 145 nC, TO-220FP package (lower profile, no isolated tab)	Limited to lower-power PFC stages due to reduced thermal mass and 200 W P_tot	Prefer when board height is constrained and case-to-heatsink isolation is not required
IXFH32N80X	R_DS(on) = 2.4 Ω (800 V rating), Q_g = 120 nC, TO-247 package	Designed for 800 V systems; over-spec'd voltage rating increases cost and capacitance in 48 V designs	Only consider if future-proofing for higher bus voltages or legacy 800 V platform reuse

Compared with STL220N8F7AG and IXFH32N80X, IPP023N08N5AKSA1 offers optimal balance of low R_DS(on), moderate Q_g, and TO-220-3 thermal performance for 48 V industrial and telecom power stages-without sacrificing avalanche ruggedness or requiring package redesign.

Availability

IPP023N08N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP023N08N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 5 family-engineered specifically for high-frequency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) and controlled switching charge are critical.

FAQ

Is IPP023N08N5AKSA1 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes. Its 2.3 mΩ R_DS(on), low Q_oss (156 nC), and fast body diode (t_rr = 85–170 ns) make it ideal for low-side synchronous rectification at 300–1000 kHz. The 100 % avalanche rating also protects against cross-conduction faults during dead-time transitions.

What is the maximum recommended gate resistor for driving IPP023N08N5AKSA1 at 1 MHz?

A gate resistor of 1.6 Ω is validated in the datasheet for 100 A switching at 1 MHz. For optimal EMI and dV/dt control, use 1.2–2.2 Ω in series with the driver output. Lower values increase peak gate current but reduce switching time; higher values damp ringing at the expense of increased turn-on loss.

Does the TO-220-3 package provide electrical isolation between the tab and leads?

No. The metal tab is internally connected to Drain (Pin 2) and is not electrically isolated. A mica or ceramic insulator and shoulder washer must be used when mounting to a grounded heatsink. The package does not support isolated-tab configurations like TO-220FP-3.

Can IPP023N08N5AKSA1 replace IPP036N08N5 in an existing design?

Yes, with measurable improvement: R_DS(on) drops from 3.6 mΩ to 2.3 mΩ (36 % lower conduction loss), and Q_g decreases from 145 nC to 133 nC. Thermal design must verify junction temperature remains within 175 °C given higher current density; PCB copper area and heatsink contact should be reviewed.

IPP023N08N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 208µA

Gate Charge (Qg) (Max) @ Vgs:: 166 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12100 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP023N08N5AKSA1 FAQ

1.How can I place an order for IPP023N08N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP023N08N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP023N08N5AKSA1 reliable?

The price and inventory of IPP023N08N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP023N08N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP023N08N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP023N08N5AKSA1 transactions.

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4.How is shipping managed for IPP023N08N5AKSA1?

IPP023N08N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP023N08N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP023N08N5AKSA1?

For technical support, including IPP023N08N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP023N08N5AKSA1 requirements.

6.How does Aetrix verify that IPP023N08N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP023N08N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP023N08N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP023N08N5AKSA1?

All IPP023N08N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP023N08N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP023N08N5AKSA1 part is unused and in its original packaging.

Return procedure for IPP023N08N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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