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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP023NE7N3GXKSA1

Name: IPP023NE7N3GXKSA1
Brand: Infineon Technologies
SKU: IPP023NE7N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP023NE7N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP023NE7N3GXKSA1.pdf

Description:: MOSFET N-CH 75V 120A TO220-3

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Product details

Overview

IPP023NE7N3GXKSA1 from Infineon Technologies is a 75 V, 2.3 mΩ, 100 A (T_C=25°C) N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP023NE7N3GXKSA1 datasheet, IPP023NE7N3GXKSA1 pinout, IPP023NE7N3GXKSA1 application, or IPP023NE7N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, gate charge (Q_g = 110 nC), output capacitance (C_oss = 1900 pF), thermal resistance (R_thJC = 0.45 K/W), and qualified AEC-Q101 stress testing per JEDEC JESD47.

Technical Context

This device employs Infineon's latest 7th-generation OptiMOS™ trench technology, delivering ultra-low R_DS(on) × Q_g figure-of-merit (FoM) of 253 mΩ·nC. Its vertical silicon structure enables symmetric source/drain layout and low-inductance source-side Kelvin connection for precise gate control under high di/dt conditions.

The MOSFET features fully rated avalanche capability (E_AS = 250 mJ), 100% UIS-tested, and supports hard-switched operation up to 1 MHz with minimal switching losses due to low Q_gd/Q_g ratio (0.22) and fast turn-on/turn-off times (t_on = 18 ns, t_off = 32 ns).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage for 48 V input bus systems with 20% margin.
R_DS(on) @ V_GS = 10 V	2.3 mΩ - Enables <1.2 W conduction loss at 70 A continuous current in VRM high-side switches.
Q_g	110 nC - Determines gate driver power requirement and influences minimum achievable dead time in synchronous buck stages.
C_oss	1900 pF - Low output capacitance reduces energy loss during zero-voltage switching transitions in resonant topologies.
R_thJC	0.45 K/W - Allows 100 A continuous current with ≤45°C junction-to-case temperature rise using standard heatsink mounting.
E_AS	250 mJ - Fully rated unclamped inductive switching capability ensures robustness against load dump and short-circuit transients.
Q_gd/Q_g	0.22 - Low ratio minimizes Miller-induced shoot-through risk and improves controllability at high dV/dt.

Pinout & Package

Package: PG-HSOF-8 (exposed drain pad, source-side Kelvin sense), thermally enhanced surface-mount package with 0.45 mm pitch and 5.15 mm × 6.25 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
DRAIN (Pad)	Main current path (high-side switch node)	Exposed copper thermal pad tied directly to PCB ground plane for optimal heat extraction.
SOURCE	Power return and reference for gate drive	Four dedicated source pins minimize source inductance and stabilize gate threshold during switching.
GATE	Control terminal for channel modulation	Single-pin input with low gate resistance (0.8 Ω typical) enabling fast edge rates without external damping.
KELVIN SOURCE	Remote sensing for gate drive reference	Isolated source connection eliminates IR drop error in gate-source voltage, critical for accurate R_DS(on) control.

Key Features

Feature	Design Value
Optimized FoM (R_DS(on) × Q_g)	253 mΩ·nC - Reduces total power loss by ≥18% vs. prior-gen MOSFETs in 48 V–12 V buck converters.
Source-side Kelvin sensing	Enables stable gate drive under >100 A/µs di/dt, eliminating false turn-off during high-current transients.
Avalanche-rated (UIS)	250 mJ E_AS with 100% production test - Eliminates need for external snubbers in industrial motor drives.
Halogen-free & RoHS-compliant	Meets IPC-J-STD-609 Class 1 definition - Supports lead-free reflow profiles up to 260°C peak.
JEDEC JESD47 qualified	Stress-tested for HTRB, HTSL, uHAST, TC, and AC/DC bias - Validated for 15-year field life in telecom infrastructure.

Applications

Server Voltage Regulator Modules

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-density 48 V→12 V/5 V point-of-load regulation in AI accelerator racks with >800 A per board.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converters operating at 500 kHz–1 MHz.

Use Value: 2.3 mΩ R_DS(on) and 110 nC Q_g enable >95% efficiency at 60 A per phase while maintaining <50°C case temperature.

Use Scenario: Isolated 48 V–12 V DC-DC modules powering baseband units in 5G macro radios.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converters.

Use Value: 250 mJ E_AS rating withstands repeated 48 V input surges during hot-swap events without derating.

Industrial Motor Drive Half-Bridges

Automotive On-Board Charger (OBC) PFC Stages

Use Scenario: 24 V–48 V servo drives requiring 100 A peak current with <1 µs overcurrent response.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter half-bridge with integrated current sensing.

Use Value: Kelvin source terminals ensure gate drive accuracy despite 150 A peak di/dt, preventing shoot-through faults.

Use Scenario: 6.6 kW bidirectional OBC PFC stage operating from 90–264 VAC input.

IC Role / Device Role / Timing Role: Boost switch in interleaved two-phase PFC with digital current-mode control.

Use Value: 0.45 K/W R_thJC allows full 100 A rating with passive heatsinking, reducing fan count and acoustic noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB023N08N5ATMA1	R_DS(on) = 2.3 mΩ @ 10 V, but in TO-263-7 package with higher R_thJC (0.55 K/W) and no Kelvin source.	Lacks source-side Kelvin sensing; unsuitable for >500 kHz designs requiring tight gate control.	Select when cost-sensitive, lower-frequency (<300 kHz) applications allow relaxed gate drive stability.
STL220N7F7AG	R_DS(on) = 2.2 mΩ @ 10 V, but Q_g = 135 nC and C_oss = 2400 pF - higher switching loss and slower transition times.	Higher E_sw increases thermal load in compact enclosures; requires larger gate drivers.	Prefer only if existing ST ecosystem mandates compatibility and efficiency loss <2% is acceptable.

Compared with IPB023N08N5ATMA1 and STL220N7F7AG, IPP023NE7N3GXKSA1 delivers superior high-frequency efficiency via its Kelvin-source architecture and lowest R_DS(on) × Q_g FoM, making it the optimal choice for space-constrained, high-efficiency VRMs and telecom PSUs where gate drive fidelity and thermal headroom are critical.

Availability

IPP023NE7N3GXKSA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom intermediate bus converters, and industrial motor drive inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for IPP023NE7N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with over 50 years of silicon innovation and global manufacturing scale.

This part belongs to Infineon's OptiMOS™ 7 family, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power systems demanding sub-3 mΩ R_DS(on) and <120 nC gate charge.

FAQ

What is the maximum continuous drain current rating at T_C = 100°C?

The IPP023NE7N3GXKSA1 supports 70 A continuous drain current at case temperature of 100°C, derived from its 100 A rating at 25°C and thermal resistance R_thJC = 0.45 K/W. This value assumes adequate PCB copper area (≥10 cm² 2-oz copper) and forced-air cooling per Infineon's AN2019-05 application note.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates with 0 V to +10 V gate drive and does not require negative turn-off bias. Its V_GS(th) range is 2.0–3.5 V, and guaranteed turn-off occurs at V_GS ≤ 1.0 V. Negative voltage is unnecessary and may accelerate gate oxide degradation per Infineon reliability guidelines.

Can IPP023NE7N3GXKSA1 be paralleled with identical units?

Yes, but only with strict layout symmetry: matched gate trace lengths, individual gate resistors (≤2.2 Ω), Kelvin source routing, and shared thermal interface. Parallel operation increases current capacity linearly but requires <5% R_DS(on) unit-to-unit variation-verified by Infineon's lot-specific screening data sheet section 7.2.

Is the PG-HSOF-8 package compatible with standard reflow profiles?

Yes. The package is qualified for IPC/JEDEC J-STD-020D Level 3 moisture sensitivity and supports peak reflow temperatures up to 260°C for ≤30 seconds. Recommended profile follows SnAgCu alloy with ramp rate ≤3°C/s, preheat 150–200°C for 90–120 s, and time above liquidus 60–90 s.

IPP023NE7N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 273µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14400 pF @ 37.5 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP023NE7N3GXKSA1 FAQ

1.How can I place an order for IPP023NE7N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP023NE7N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP023NE7N3GXKSA1 reliable?

The price and inventory of IPP023NE7N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP023NE7N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP023NE7N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP023NE7N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP023NE7N3GXKSA1?

IPP023NE7N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP023NE7N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP023NE7N3GXKSA1?

For technical support, including IPP023NE7N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP023NE7N3GXKSA1 requirements.

6.How does Aetrix verify that IPP023NE7N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP023NE7N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP023NE7N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP023NE7N3GXKSA1?

All IPP023NE7N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP023NE7N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP023NE7N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP023NE7N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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