Infineon Technologies IPP024N08NF2SAKMA1

Overview

IPP024N08NF2SAKMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-current DC-DC conversion and motor drive applications. It features 80 V V_DS, 2.4 mΩ max R_DS(on) at V_GS = 10 V, 182 A continuous drain current (T_C = 25 °C), 100% avalanche tested, and RoHS/halogen-free construction.

For engineers reviewing the IPP024N08NF2SAKMA1 datasheet, IPP024N08NF2SAKMA1 pinout, IPP024N08NF2SAKMA1 application, or IPP024N08NF2SAKMA1 equivalent, key selection criteria include low conduction loss at high current, fast switching with Q_G = 89 nC and Q_OSS = 105 nC, thermal robustness (R_thJC = 0.7 °C/W), and rugged body diode performance (Q_RR = 242 nC, t_rr = 39 ns).

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining high voltage capability and fast switching. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) enables reliable turn-on with standard 5 V or 10 V gate drivers, and its low C_iss (6200 pF) and C_oss (1000 pF) support high-frequency operation up to 500 kHz in hard-switched topologies.

The integrated Schottky-like body diode delivers low V_SD (0.91 V typ. at 100 A, 25 °C) and controlled reverse recovery (t_rr = 39 ns, Q_rr = 242 nC), reducing switching losses and EMI in synchronous rectification and H-bridge configurations. Thermal design is supported by a low junction-to-case resistance of 0.7 °C/W and validated JEDEC qualification.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (lead-free, RoHS/halogen-free), with isolated tab connected to Drain (Pin 2). Standard through-hole mounting; tab must be electrically insulated from heatsink unless drain-referenced.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) power MOSFET applications.

Compared with STL220N8F7AG and IXFH180N08S4, IPP024N08NF2SAKMA1 offers the best balance of ultra-low R_DS(on), moderate Q_G, isolated tab for flexible thermal management, and industry-leading avalanche ruggedness-making it optimal for space-constrained, high-reliability industrial power stages.

Availability

IPP024N08NF2SAKMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and uninterruptible power systems requiring stable component supply and long-lifecycle support.

Supply support for IPP024N08NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the StrongIRFET™ 2 family, designed specifically for high-efficiency, high-power-density power conversion in industrial and renewable energy systems where low conduction loss, fast switching, and ruggedness under transient stress are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 139 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the PG-TO220-3 package and must be applied in thermal design to ensure junction temperature remains ≤175 °C under worst-case ambient and airflow conditions.

Is the drain tab electrically isolated from the package leads?

Yes-the drain is connected to the metal tab (Pin 2), which is electrically isolated from Pins 1 (Gate) and 3 (Source). The tab must be mounted on an insulated heatsink unless the system design intentionally references the heatsink to drain potential; isolation voltage rating is not specified but typical for TO220 packages is ≥2.5 kV DC.

Does this MOSFET have a built-in ESD protection diode on the gate?

No-IPP024N08NF2SAKMA1 does not integrate gate ESD protection. The gate oxide is rated for ±20 V V_GS, and external gate protection (e.g., Zener clamp or RC snubber) is recommended in high-noise environments or during handling to prevent damage from static discharge or voltage overshoot.

Can this device replace IPP030N08N5 in an existing design?

Yes-with caution: IPP024N08NF2SAKMA1 has lower R_DS(on) (2.4 mΩ vs. 3.0 mΩ) and higher Q_G (89 nC vs. 72 nC), requiring gate driver strength verification. Pinout and package are identical (PG-TO220-3), but the lower threshold voltage (2.2–3.8 V vs. 2.5–4.0 V) may affect turn-on timing in marginal gate drive circuits.