Infineon Technologies IPP029N06NXKSA1

Overview

IPP029N06NXKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-efficiency synchronous rectification in 60 V SMPS topologies, featuring 2.9 mΩ R_DS(on) at V_GS = 10 V, 100 A continuous drain current, and 100% avalanche-tested ruggedness. It is housed in a TO-220-3 package with tab-connected drain for low thermal resistance.

For engineers reviewing the IPP029N06NXKSA1 datasheet, IPP029N06NXKSA1 pinout, IPP029N06NXKSA1 application in SMPS or DC-DC converters, or IPP029N06NXKSA1 equivalent for high-current 60 V switching, this page delivers verified electrical specs, thermal performance, gate charge behavior, and real-world design context.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched and synchronous rectifier configurations, with gate threshold voltage (2.1–3.3 V) enabling robust TTL/CMOS drive compatibility. Its low Q_g (56 nC) and Q_gd (11–15 nC) support fast switching at high frequencies while minimizing Miller-induced shoot-through risk.

The integrated body diode exhibits 1.0–1.2 V forward voltage at 100 A and 54–86 ns reverse recovery time, making it suitable for freewheeling paths where controlled reverse recovery is critical-especially in LLC resonant and phase-shifted full-bridge topologies.

Key Specifications

Pinout & Package

IPP029N06NXKSA1 uses the PG-TO220-3 package (standard TO-220-3 outline), with metal tab electrically connected to the drain terminal for optimal thermal and electrical performance in high-current layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V power MOSFET applications.

Compared with IPB029N06N, IPP029N06NXKSA1 offers superior heatsink coupling via its drain-tab connection but requires through-hole assembly; versus STP100N6F6, it delivers measurable efficiency gain (>0.5% at full load) and guaranteed avalanche immunity essential for telecom and server power.

Availability

IPP029N06NXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, telecom rectifiers, and EV onboard charger auxiliary supplies requiring stable component supply and long-term manufacturability.

Supply support for IPP029N06NXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon and wide-bandgap technologies.

This part belongs to the OptiMOSTM 60 V power transistor family, engineered specifically for high-efficiency, high-reliability switching in server, telecom, and industrial SMPS where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

Is IPP029N06NXKSA1 suitable for use as a high-side switch in a buck converter?

Yes-it supports high-side configuration with appropriate gate driving (e.g., bootstrap or isolated supply). Its 60 V V_DS, 2.9 mΩ R_DS(on), and 100 A rating make it viable for 48 V input buck stages. Gate threshold (2.1–3.3 V) ensures reliable turn-on with 10 V drive, and its low Q_gd minimizes Miller plateau effects during high dV/dt transitions.

What is the maximum recommended PCB copper area for thermal performance in TO-220 mounting?

The datasheet specifies 6 cm² of 70 µm thick copper on FR4 (40 mm × 40 mm) yields R_thJA = 40 K/W. Larger copper areas provide diminishing returns; beyond 10 cm², improvement is <5%. For best results, connect the drain tab directly to inner-layer copper planes using multiple thermal vias (≥8 × 0.3 mm) under the tab footprint.

Does IPP029N06NXKSA1 have a built-in ESD protection diode on the gate?

No-this MOSFET does not integrate gate ESD protection. The gate oxide is rated for ±20 V V_GS, and gate-source leakage is specified up to 100 nA at V_GS = 20 V. External Zener clamping (e.g., 12 V TVS) is recommended in high-noise environments or during manual handling to prevent gate oxide damage.

Can IPP029N06NXKSA1 replace IPP033N06N in an existing design?

Yes-with minor validation. IPP029N06NXKSA1 has lower R_DS(on) (2.9 vs. 3.3 mΩ) and slightly higher Q_g (56 vs. 52 nC), resulting in ~4% lower conduction loss but marginally increased switching loss. Thermal and layout compatibility is identical (same TO-220-3 package and pinout), and both are 100% avalanche tested-no redesign required beyond efficiency and thermal margin checks.