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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP030N10N5XKSA1

Name: IPP030N10N5XKSA1
Brand: Infineon Technologies
SKU: IPP030N10N5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP030N10N5XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP030N10N5XKSA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP030N10N5XKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in TO-220-3 package, rated for 100 V V_DS, 3.0 mΩ R_DS(on) max at V_GS = 10 V, and 120 A continuous drain current at T_C = 25 °C. It features low gate charge (Q_G = 112 nC), high avalanche ruggedness (E_AS = 502 mJ), and is optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPP030N10N5XKSA1 datasheet, IPP030N10N5XKSA1 pinout, IPP030N10N5XKSA1 application, or IPP030N10N5XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/R_DS(on) figure-of-merit for switching loss trade-offs, thermal resistance (R_thJC = 0.4–0.6 K/W), and 100% avalanche-tested reliability in hard-switching topologies.

Technical Context

This OptiMOS™5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching dynamics. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) ensures robust noise immunity and reliable turn-on with standard 5 V or 10 V gate drivers.

The MOSFET integrates a low-V_SD body diode (0.9–1.2 V at 100 A, 25 °C) with controlled reverse recovery (t_rr = 74–148 ns, Q_rr = 166–332 nC), enabling efficient synchronous rectification without external Schottky replacement in 48 V input telecom and server power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V bus systems with 2× safety margin against transients.
R_DS(on) max	3.0 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.5 W conduction loss at 100 A, critical for high-current POL stages.
Q_G	112 nC - Low total gate charge reduces driver power demand and enables >500 kHz operation with minimal switching loss.
E_AS	502 mJ - Fully tested single-pulse avalanche energy supports non-clamped inductive switching in motor drives and SMPS.
R_thJC	0.4–0.6 K/W - Enables direct heatsink mounting for thermal management in compact 1U server PSUs.
I_D cont	120 A at T_C = 25 °C - Supports high-current output rails in telecom rectifiers and battery charging circuits.
t_rr	74–148 ns - Fast, soft-recovery body diode minimizes shoot-through risk and EMI in synchronous buck converters.

Pinout & Package

Package: PG-TO220-3 (TO-220-3), with exposed drain tab for thermal and electrical connection. Pin 1: Gate; Pin 2: Drain (tab-connected); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V absolute max rating; low input capacitance (C_iss = 7920–10300 pF) eases driver design.
Pin 2 (Drain / Tab)	High-side power terminal	Electrically and thermally connected to metal tab; must be isolated from heatsink unless system ground reference permits.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate drive; low-inductance layout essential to suppress ringing during fast dV/dt transitions.

Key Features

Feature	Design Value
OptiMOS™5 trench technology	Delivers best-in-class Q_g × R_DS(on) FOM (≈336 mΩ·nC), reducing combined conduction + switching losses by >15% vs. prior-gen 100 V MOSFETs.
100% avalanche tested	Guarantees single-pulse ruggedness up to 502 mJ, eliminating need for external snubbers in flyback or LLC resonant converter primary switches.
Pb-free, halogen-free	Complies with RoHS and IEC61249-2-21; suitable for automotive and industrial applications requiring strict material compliance.
JEDEC-qualified	Validated per J-STD-020 (MSL1 reflow) and JESD22-A108 (temperature cycling), ensuring reliability in automated SMT assembly and long-life deployments.

Applications

Telecom Rectifier Modules

Server Point-of-Load Converters

Use Scenario: 48 V input, 12 V/100 A output synchronous buck stage in 19-inch rack-mounted rectifiers.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 300–500 kHz with adaptive dead-time control.

Use Value: 3.0 mΩ R_DS(on) cuts conduction loss by ~40% vs. 4.5 mΩ alternatives, improving full-load efficiency from 93.2% to 94.1%.

Use Scenario: Secondary-side synchronous rectifier in multiphase VR13/VR14 CPU core power delivery.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck topology, driven by integrated controller with 5 V gate bias.

Use Value: 74 ns t_rr and 166 nC Q_rr reduce body-diode conduction loss and EMI, enabling stable operation at 1 MHz+ switching frequency.

Industrial Motor Drives

Battery Energy Storage Systems

Use Scenario: Half-bridge inverter leg for 3 kW BLDC motor control with regenerative braking.

IC Role / Device Role / Timing Role: High-current switching element handling 120 A peak phase current and 100 V bus transients.

Use Value: 502 mJ E_AS withstands unclamped inductive kickback during rapid deceleration without failure.

Use Scenario: Bidirectional DC-DC isolation stage in 48 V/300 V battery stack interface for grid-tied ESS.

IC Role / Device Role / Timing Role: Unidirectional switch in active clamp forward topology, conducting 100 A continuously at 65 °C ambient.

Use Value: R_thJC = 0.4 K/W allows direct heatsink mounting with <1.5 °C/W total thermal resistance, limiting junction rise to <60 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 2.2 mΩ (lower), Q_G = 135 nC (higher), TO-220FP package (smaller footprint, higher R_thJA)	Better conduction loss but slower switching; suited for lower-frequency (<200 kHz), space-constrained designs.	Select when thermal budget allows higher R_thJA and priority is static efficiency over switching speed.
IXFH120N10P	R_DS(on) = 3.4 mΩ (higher), Q_G = 95 nC (lower), TO-247 package (superior R_thJC = 0.35 K/W)	Lower gate charge improves high-frequency performance; larger package enables higher power density in forced-air cooling.	Prefer for >1 MHz operation or when junction temperature must stay <125 °C under 120 A continuous load.

Compared with STL220N10F7 and IXFH120N10P, IPP030N10N5XKSA1 strikes a balanced trade-off: lowest R_DS(on) among TO-220-3 100 V devices with moderate Q_G, making it optimal for 300–600 kHz telecom/server supplies where board area and thermal interface constraints are tight.

Availability

IPP030N10N5XKSA1 is available at Aetrix Electronics and suitable for telecom rectifier modules, server point-of-load converters, and industrial motor drives requiring stable component supply and JEDEC-qualified reliability.

Supply support for IPP030N10N5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOS™5 family-designed specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) and fast switching are co-optimized.

FAQ

What is the maximum safe operating temperature for IPP030N10N5XKSA1?

The junction temperature must not exceed 175 °C under any operating condition. At T_C = 100 °C, the device supports 120 A continuous drain current only if R_thJC ≤ 0.6 K/W and heatsink interface resistance is <0.2 K/W. Derating curves in Figure 2 of the datasheet confirm 80 A at T_C = 100 °C.

Can IPP030N10N5XKSA1 be used in avalanche mode repeatedly?

No-while 100% single-pulse avalanche tested to 502 mJ, the device is not rated for repetitive avalanche operation. Repeated exposure risks parametric shift and premature failure; circuit design must avoid unclamped inductive switching during normal operation.

Is the TO-220-3 package lead-free and RoHS-compliant?

Yes-the part uses Pb-free plating and meets RoHS Directive 2011/65/EU requirements. The "XKSA1" suffix explicitly denotes RoHS-compliant packaging and halogen-free construction per IEC61249-2-21.

How does the body diode performance compare to external Schottky diodes?

The integrated body diode has V_SD = 0.9–1.2 V at 100 A and t_rr = 74–148 ns-higher forward drop than Schottky but more predictable, temperature-stable recovery. In synchronous rectification, it eliminates reverse recovery spikes seen in SiC Schottkys, simplifying EMI filtering.

IPP030N10N5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 184µA

Gate Charge (Qg) (Max) @ Vgs:: 139 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10300 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP030N10N5XKSA1 FAQ

1.How can I place an order for IPP030N10N5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP030N10N5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP030N10N5XKSA1 reliable?

The price and inventory of IPP030N10N5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP030N10N5XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP030N10N5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP030N10N5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP030N10N5XKSA1?

IPP030N10N5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP030N10N5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP030N10N5XKSA1?

For technical support, including IPP030N10N5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP030N10N5XKSA1 requirements.

6.How does Aetrix verify that IPP030N10N5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP030N10N5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP030N10N5XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP030N10N5XKSA1?

All IPP030N10N5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP030N10N5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP030N10N5XKSA1 part is unused and in its original packaging.

Return procedure for IPP030N10N5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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