Infineon Technologies IPP033N03LF2SAKSA1

Overview

IPP033N03LF2SAKSA1 from Infineon is an N-channel logic-level MOSFET in PG-TO220-3 package, rated for 30 V drain-source voltage, 3.3 mΩ maximum R_DS(on) at V_GS = 10 V, and 78 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, 175 °C junction rating, and optimized gate charge (Q_g = 16–24 nC) for high-efficiency synchronous buck converters and motor drive half-bridges.

For engineers reviewing the IPP033N03LF2SAKSA1 datasheet, IPP033N03LF2SAKSA1 pinout, IPP033N03LF2SAKSA1 application, or IPP033N03LF2SAKSA1 equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_g/Q_gd ratio, thermal resistance (R_thJC = 1.8 °C/W), and avalanche ruggedness-critical for 12 V/24 V industrial power stages and automotive body control modules.

Technical Context

This StrongIRFET™ 2 device uses trench-based silicon technology with optimized cell pitch and gate oxide design to achieve low R_DS(on) × Q_g figure-of-merit (FoM). Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) ensures reliable turn-on with 3.3 V or 5 V logic drivers, while the 1.8 °C/W junction-to-case thermal resistance supports high-current operation on standard TO-220 heatsinks.

The MOSFET integrates a fast, low-Q_rr (41 nC) body diode with t_rr = 17 ns, enabling efficient synchronous rectification without external Schottky diodes. Its 109–219 mJ single-pulse avalanche energy rating allows robust operation under inductive switching stress in DC-DC and motor control applications.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS/halogen-free compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with STL220N3LLH6 and IRF3710PBF, IPP033N03LF2SAKSA1 delivers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness in a serviceable through-hole package-making it ideal for cost-sensitive, thermally constrained 30 V industrial and automotive power stages.

Availability

IPP033N03LF2SAKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V motor drives, server VRM synchronous buck converters, and telecom intermediate bus converters requiring stable component supply and long-term manufacturability.

Supply support for IPP033N03LF2SAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™ 2 family-engineered specifically for high-current, high-efficiency switching in 12 V–48 V power systems where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

Is IPP033N03LF2SAKSA1 suitable for synchronous rectification in a 30 V input buck converter?

Yes. Its low R_DS(on) (3.3 mΩ), fast body diode (t_rr = 17 ns, Q_rr = 41 nC), and logic-level gate drive (V_GS(th) ≤ 2.35 V) make it well-suited for synchronous rectification in 30 V input buck converters operating up to 500 kHz. The 175 °C rating supports high ambient temperature operation without derating.

What is the maximum recommended PCB copper area for thermal performance in still air?

Per Infineon's datasheet, the specified thermal resistance R_thJA = 40 °C/W assumes a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² (one-layer, 70 μm thick) copper area for drain connection, mounted vertically in still air. Increasing copper area beyond this yields diminishing returns unless forced airflow or heatsinking is added.

Does IPP033N03LF2SAKSA1 require a gate resistor for safe switching in a 50 A motor drive application?

Yes. A gate resistor (typically 1–10 Ω) is required to control dV/dt and prevent oscillation or shoot-through in half-bridge configurations. With Q_g = 16–24 nC and typical gate driver peak current of 1–2 A, a 4.7 Ω resistor limits turn-on time to ~100 ns while damping ringing caused by parasitic inductance in the gate loop.

Can IPP033N03LF2SAKSA1 be used in place of IPP033N03L in existing designs?

Yes-IPP033N03LF2SAKSA1 is the updated, fully qualified revision of IPP033N03L with identical pinout, R_DS(on), and thermal specs. Key improvements include enhanced avalanche ruggedness (E_AS increased to 219 mJ), tighter V_GS(th) distribution, and full compliance with JEDEC JESD47 reliability standards for automotive-grade use.