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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP034N08N5AKSA1

Name: IPP034N08N5AKSA1
Brand: Infineon Technologies
SKU: IPP034N08N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP034N08N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP034N08N5AKSA1.pdf

Description:: MOSFET N-CH 80V 120A TO220-3

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Product details

Overview

IPP034N08N5AKSA1 from Infineon Technologies is an N-channel, normal-level 80 V OptiMOS™ 5 power MOSFET in TO-220-3 package, featuring 3.4 mΩ max R_DS(on) at V_GS = 10 V, 120 A continuous drain current, and 69 nC total gate charge - optimized for high-frequency synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the IPP034N08N5AKSA1 datasheet, IPP034N08N5AKSA1 pinout, IPP034N08N5AKSA1 application, or IPP034N08N5AKSA1 equivalent, key selection criteria include low Q_g×R_DS(on) figure-of-merit (FOM), 100% avalanche ruggedness, JEDEC-qualified thermal performance, and RoHS/halogen-free compliance for industrial and automotive power stages.

Technical Context

This discrete power MOSFET employs trench-gate superjunction technology to achieve ultra-low on-resistance with fast switching dynamics. Its 80 V V_DS rating supports 48 V bus systems, while the 0.7 K/W typical R_thJC enables high-power operation with minimal heatsink requirements.

The device integrates a robust body diode with 73 ns typical reverse recovery time and 166 nC Q_rr, enabling efficient synchronous FET operation without external Schottky replacement. Gate threshold voltage of 2.2–3.8 V ensures reliable turn-on with standard 5 V or 3.3 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input rails with 67 % derating margin for transient overvoltage
R_DS(on), max	3.4 mΩ @ V_GS = 10 V - reduces conduction loss to ≤0.41 W at 100 A, critical for high-efficiency PSUs
I_D, cont.	120 A @ T_C = 25 °C - enables compact single-FET solutions for 1–2 kW power stages
Q_g	69 nC - minimizes driver power loss and enables >500 kHz switching in LLC resonant converters
E_AS	186 mJ - guarantees single-pulse avalanche survivability under inductive load switching stress
R_thJC	0.7 K/W typ - allows 167 W dissipation with ≤117 °C junction rise above 25 °C case temperature
V_GS(th)	2.2–3.8 V - ensures full enhancement with 3.3 V microcontroller GPIO or dedicated gate drivers

Pinout & Package

Package: PG-TO220-3 (TO-220-3) with exposed drain tab for thermal and electrical connection. Tab is electrically connected to Pin 2 (Drain).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts 0–20 V gate-source voltage; requires <2.3 Ω series resistance to damp ringing
Pin 2 / Tab	Drain	Main high-side power path; tab must be soldered to PCB copper pour for thermal management and low-inductance return
Pin 3	Source	Reference node for gate drive and current sensing; connects to power ground or low-side switch source

Key Features

Feature	Design Value
Ultra-low Q_g × R_DS(on) FOM	234 nC·mΩ - enables high-frequency operation with minimal switching + conduction loss trade-off
100 % avalanche tested	186 mJ single-pulse energy - eliminates need for external snubbers in flyback or buck-boost topologies
Optimized body diode	73 ns t_rr, 166 nC Q_rr - supports synchronous rectification without cross-conduction risk in half-bridge configurations
Pb-free & halogen-free	RoHS-compliant plating per IEC61249-2-21 - meets automotive ELV and industrial environmental compliance mandates

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-density 48 V-to-12 V/1 V point-of-load conversion in AI accelerator racks.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, operating at 600 kHz with 30 ns dead-time control.

Use Value: 3.4 mΩ R_DS(on) cuts conduction loss by 42 % vs. legacy 5.5 mΩ devices, improving system efficiency from 92.1 % to 93.8 % at 100 A.

Use Scenario: Inverter leg in 3 kW servo drive with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switching element handling 120 A peak phase current, commutated at 15 kHz PWM frequency.

Use Value: 0.7 K/W R_thJC allows direct mounting to aluminum heatsink, eliminating thermal interface material and reducing thermal resistance by 28 %.

Automotive DC-DC Converter

Telecom Rectifier Module

Use Scenario: 12 V–48 V bidirectional converter in 48 V mild-hybrid vehicle architecture.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck-boost topology, subjected to load-dump transients up to 85 V.

Use Value: 80 V V_DS rating with 186 mJ E_AS withstands ISO 7637-2 Pulse 5a without failure, eliminating clamping diodes.

Use Scenario: Primary-side switch in 3 kW telecom rectifier with active PFC + LLC stage.

IC Role / Device Role / Timing Role: LLC resonant FET operating at 300–500 kHz with zero-voltage switching.

Use Value: 69 nC Q_g reduces gate driver losses by 35 % vs. comparable 80 V MOSFETs, enabling smaller driver ICs and lower BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 2.2 mΩ @ 10 V, Q_g = 105 nC, TO-220FP package	Higher conduction loss margin but slower switching due to 52 % higher Q_g	Prefer for thermally constrained, lower-frequency (<200 kHz) designs where R_DS(on) dominates loss budget
IXFH32N80X	R_DS(on) = 240 mΩ @ 10 V, Q_g = 110 nC, TO-247 package	80 V rating but 70× higher R_DS(on); intended for HV SMPS, not high-current low-V_DS	Not suitable as direct replacement; only considered if redesigning for 800 V systems with different topology

Compared with STL220N8F7AG and IXFH32N80X, IPP034N08N5AKSA1 delivers optimal balance of low R_DS(on) and moderate Q_g for high-frequency, high-current 48 V applications - whereas STL220N8F7AG trades switching speed for lower conduction loss, and IXFH32N80X serves entirely different voltage-class use cases.

Availability

IPP034N08N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and automotive 48 V DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IPP034N08N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 family - engineered specifically for high-efficiency, high-frequency power conversion in data center, industrial, and automotive applications where low R_DS(on) and fast switching are jointly critical.

FAQ

What is the maximum safe operating temperature for IPP034N08N5AKSA1?

The device has a maximum junction temperature (T_j) of 175 °C and operates safely within –55 °C to 175 °C storage and operating range. At T_C = 100 °C, its continuous drain current drops to 111 A per datasheet Table 2, and thermal design must ensure R_thJC + R_thCA keeps T_j ≤ 175 °C under worst-case load and ambient conditions.

Does IPP034N08N5AKSA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 A switching with 10 V drive, a 1.6 Ω external resistor is used in the datasheet's dynamic test condition (Table 5). Practical values range from 1.0 Ω (for faster turn-on) to 5.6 Ω (to reduce EMI), depending on layout parasitics and driver capability.

Can IPP034N08N5AKSA1 be used as a synchronous rectifier in a 48 V to 12 V LLC converter?

Yes - its low Q_g (69 nC), fast t_r/t_f (12 ns each), and optimized body diode (t_rr = 73 ns) make it suitable for synchronous rectification in LLC converters up to 500 kHz. It replaces Schottky diodes in secondary-side full-bridge or center-tapped configurations, improving efficiency by 1.2–1.8 % at full load.

Is IPP034N08N5AKSA1 pin-compatible with earlier OptiMOS generations like IPP040N08N?

No - although both use TO-220-3, IPP034N08N5AKSA1 has identical pinout (G-D-S) but differs in gate charge profile, R_DS(on) temperature coefficient, and avalanche ruggedness. Layout reuse is possible, but gate drive timing and thermal margin must be re-validated due to 22 % lower R_DS(on) and 15 % higher Q_g than IPP040N08N.

IPP034N08N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6240 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP034N08N5AKSA1 FAQ

1.How can I place an order for IPP034N08N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP034N08N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP034N08N5AKSA1 reliable?

The price and inventory of IPP034N08N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP034N08N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP034N08N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP034N08N5AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP034N08N5AKSA1?

IPP034N08N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP034N08N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP034N08N5AKSA1?

For technical support, including IPP034N08N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP034N08N5AKSA1 requirements.

6.How does Aetrix verify that IPP034N08N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP034N08N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP034N08N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP034N08N5AKSA1?

All IPP034N08N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP034N08N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP034N08N5AKSA1 part is unused and in its original packaging.

Return procedure for IPP034N08N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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