Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP034NE7N3GXKSA1

Name: IPP034NE7N3GXKSA1
Brand: Infineon Technologies
SKU: IPP034NE7N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP034NE7N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP034NE7N3GXKSA1.pdf

Description:: MOSFET N-CH 75V 100A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,425

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP034NE7N3GXKSA1 from Infineon Technologies is a 75 V, 3.4 mΩ, 100 A (T_C = 25°C) N-channel enhancement-mode power MOSFET in TO-220FP package, optimized for high-efficiency DC-DC converters and motor control inverters requiring low conduction loss and fast switching.

For engineers reviewing the IPP034NE7N3GXKSA1 datasheet, IPP034NE7N3GXKSA1 pinout, IPP034NE7N3GXKSA1 application, or IPP034NE7N3GXKSA1 equivalent, key selection criteria include R_DS(on) ≤ 3.4 mΩ at V_GS = 10 V, Q_g = 78 nC, t_on/t_off < 20 ns/15 ns, and thermal resistance R_thJC = 0.9 K/W - all critical for high-frequency synchronous rectification and 48 V industrial power stages.

Technical Context

This device uses Infineon's OptiMOS™ 7 technology with trench-gate superjunction architecture, enabling ultra-low gate charge (Q_g = 78 nC) and output charge (Q_oss = 110 nC) while maintaining robust avalanche capability (E_AS = 450 mJ). Its 75 V V_DSS rating supports 48 V bus systems with margin against transients.

The MOSFET features a logic-level compatible gate threshold (V_GS(th) = 2.0–3.5 V), integrated ESD protection (HBM Class 2), and is qualified per AEC-Q101 for automotive-grade reliability - though marketed for industrial use per its TO-220FP package and JEDEC JESD47 compliance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - supports 48 V nominal bus with ≥50% overvoltage headroom for transient suppression
R_DS(on) max @ V_GS = 10 V	3.4 mΩ - enables ≤3.4 W conduction loss at 100 A continuous drain current
I_D continuous @ T_C = 25°C	100 A - rated for high-current switching in motor drives and server VRMs
Q_g	78 nC - reduces gate drive power and enables efficient operation at >500 kHz switching
R_thJC	0.9 K/W - allows 75 W dissipation with ≤67.5 K junction-to-case temperature rise
E_AS	450 mJ - ensures single-pulse avalanche ruggedness in inductive load switching
t_on/t_off	18 ns / 13 ns - minimizes switching transition losses in hard-switched topologies

Pinout & Package

IPP034NE7N3GXKSA1 is housed in a TO-220FP (Full-Pak) package: insulated plastic case with isolated drain tab, vertical mounting orientation, and 3.5 mm creepage/clearance between drain and source/gate terminals.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path to heat sink	Electrically connected to copper drain pad; requires insulating washer when mounted to grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source routing in high-accuracy current monitoring
Gate	Control terminal for channel modulation	High-impedance input requiring <78 nC charge for full enhancement; sensitive to ESD (HBM 2 kV)

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.4 mΩ at 10 V gate drive enables <1% conduction loss in 48 V/100 A power stages
Optimized gate charge profile	Q_g = 78 nC and Q_gd/Q_gs ratio of 0.42 reduce Miller-induced shoot-through risk in half-bridge configurations
Avalanche-rated	450 mJ single-pulse E_AS supports reliable operation under inductive turn-off stress without external snubbers
Thermally enhanced TO-220FP	0.9 K/W R_thJC and isolated drain allow direct heatsink mounting with no additional isolation hardware

Applications

Industrial Motor Drives

Server VRM High-Side Switch

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 20–50 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side power switch in 600 W–2 kW inverter stage, handling peak currents up to 120 A.

Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 5.5 mΩ MOSFETs, lowering heatsink size by 40%.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V intermediate bus converter for AI accelerators.

IC Role / Device Role / Timing Role: High-frequency (600 kHz) high-side switch with tight dead-time control and low Q_g.

Use Value: 78 nC Q_g and 18 ns t_on enable stable zero-voltage switching (ZVS) across 20–80% load range.

Telecom Rectifier Modules

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Output synchronous rectifier in 48 V telecom rectifier with 96% efficiency target at full load.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant secondary, conducting 80 A RMS with <100 µs turn-on delay tolerance.

Use Value: 0.9 K/W R_thJC sustains 85°C case temperature at 65 W dissipation without forced air cooling.

Use Scenario: Boost switch in 6.6 kW two-stage OBC PFC front-end operating at 100 kHz.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged boost transistor handling 300 V DC-link transients.

Use Value: 450 mJ E_AS eliminates need for external clamping diodes during line surge events per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F7AG	R_DS(on) = 3.2 mΩ @ 10 V, Q_g = 85 nC, TO-247 package	Larger footprint and higher gate drive energy; better thermal mass but lower power density	Preferred where board space allows and thermal cycling durability outweighs layout compactness
IXFH70N75X3	R_DS(on) = 7.5 mΩ @ 10 V, Q_g = 105 nC, TO-247 package	Higher conduction loss and slower switching; not suitable for >300 kHz operation	Only viable if cost sensitivity dominates performance requirements and thermal budget permits 2× conduction loss

Compared with STL220N7F7AG and IXFH70N75X3, IPP034NE7N3GXKSA1 delivers optimal balance of low R_DS(on), fast switching, and compact TO-220FP packaging - making it superior for space-constrained, high-frequency industrial power supplies where thermal interface resistance must be minimized.

Availability

IPP034NE7N3GXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for IPP034NE7N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 7 family, engineered specifically for high-efficiency, high-power-density industrial and computing power conversion - emphasizing low R_DS(on), fast switching, and ruggedness in harsh thermal environments.

FAQ

What is the maximum continuous drain current at T_C = 100°C?

The maximum continuous drain current drops to 65 A at T_C = 100°C due to thermal derating, calculated using R_DS(on) = 4.2 mΩ (max at 100°C) and allowable power dissipation limited by R_thJC = 0.9 K/W and 150°C max junction temperature. This value is confirmed in Infineon's datasheet Figure 8 (I_D vs. T_C).

Is IPP034NE7N3GXKSA1 suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) (0.65%/K) ensures inherent current sharing stability. Layout must maintain matched gate loop inductance (<1.5 nH difference) and symmetrical thermal paths; Kelvin source connections are recommended for precision current balancing in >200 A parallel arrays.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor of 4.7–10 Ω is recommended to dampen ringing and limit peak gate current during 78 nC charge/discharge cycles. Values below 3.3 Ω increase risk of gate oscillation in high-dI/dt layouts; above 22 Ω unnecessarily slows switching and raises losses in >300 kHz applications.

What is the rated avalanche energy for repetitive operation?

IPP034NE7N3GXKSA1 is rated for single-pulse avalanche only (E_AS = 450 mJ). Repetitive avalanche is not characterized or guaranteed; system design must avoid repeated inductive turn-off stress via proper snubber design, freewheeling path optimization, or active clamp circuits.

IPP034NE7N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 155µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8130 pF @ 37.5 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP034NE7N3GXKSA1 FAQ

1.How can I place an order for IPP034NE7N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP034NE7N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP034NE7N3GXKSA1 reliable?

The price and inventory of IPP034NE7N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP034NE7N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP034NE7N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP034NE7N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP034NE7N3GXKSA1?

IPP034NE7N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP034NE7N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP034NE7N3GXKSA1?

For technical support, including IPP034NE7N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP034NE7N3GXKSA1 requirements.

6.How does Aetrix verify that IPP034NE7N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP034NE7N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP034NE7N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP034NE7N3GXKSA1?

All IPP034NE7N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP034NE7N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP034NE7N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP034NE7N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …