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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP037N08N3GXKSA1

Name: IPP037N08N3GXKSA1
Brand: Infineon Technologies
SKU: IPP037N08N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP037N08N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP037N08N3GXKSA1.pdf

Description:: MOSFET N-CH 80V 100A TO220-3

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Product details

Overview

IPP037N08N3GXKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-frequency switching and synchronous rectification in DC/DC converters, featuring 80 V V_DS, 3.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 100 A, 100% avalanche tested, and housed in PG-TO220-3 package. It delivers low gate charge × R_DS(on) figure-of-merit for efficient power conversion in server VRMs and telecom POL modules.

For engineers reviewing the IPP037N08N3GXKSA1 datasheet, IPP037N08N3GXKSA1 pinout, IPP037N08N3GXKSA1 application, or IPP037N08N3GXKSA1 equivalent, this page provides verified electrical specs, thermal performance data, validated package dimensions, and real-world use cases in high-current, high-efficiency power stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™3 silicon technology with trench-gate process to achieve ultra-low R_DS(on) and minimized Q_g/Q_gd ratio - critical for reducing switching losses in hard-switched topologies. Its 80 V rating and 100 A continuous drain current support 48 V input bus architectures.

The device integrates a robust body diode with 136 nC Q_rr and 73 ns t_rr, enabling reliable synchronous rectification without external Schottky replacement in isolated forward and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V nominal input systems with 20 % margin for transients
R_DS(on) max	3.5 mΩ @ V_GS = 10 V, I_D = 100 A - enables <1.5 W conduction loss at 100 A
Q_g	88–117 nC - balances fast turn-on speed and gate driver stress in 300–1000 kHz operation
E_AS	510 mJ @ I_D = 100 A - ensures single-pulse avalanche ruggedness under load dump or short-circuit conditions
R_thJC	0.7 K/W - allows 214 W power dissipation with ≤150 °C junction rise over case at T_C = 25 °C
Q_rr	136 nC - reduces reverse recovery loss and EMI in synchronous rectifier mode

Pinout & Package

IPP037N08N3GXKSA1 uses PG-TO220-3 package: insulated plastic case with vertical mounting, 3-pin through-hole configuration, drain-connected tab for heatsinking, and RoHS-compliant lead-free plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)	Control input	Receives PWM signal; requires 10 V drive for full enhancement; R_G = 1.9 Ω internal
Pin 3 (Drain)	High-side power path	Connected to heatsink via metal tab; carries full load current and withstands 80 V blocking

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	310–410 nC·mΩ - directly improves efficiency in 500 kHz–1 MHz DC/DC converters
100 % avalanche rated	510 mJ single-pulse energy - eliminates need for external clamping in inductive load switching
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~1.8× from 25 °C to 175 °C - maintains stable current sharing in parallel configurations
Enhanced body diode softness	t_rr = 73 ns, Q_rr = 136 nC - minimizes voltage overshoot and ringing during commutation

Applications

Server Voltage Regulator Modules (VRMs)

Telecom Point-of-Load (POL) Converters

Use Scenario: High-current CPU/GPU core supply delivering up to 200 A per phase with <1 % output ripple.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 600–800 kHz with precise dead-time control.

Use Value: 3.5 mΩ R_DS(on) cuts conduction loss by >35 % vs. legacy 5.5 mΩ devices, improving full-load efficiency by 0.8–1.2 %.

Use Scenario: 12 V input to 0.8–3.3 V output conversion in 48 V telecom infrastructure equipment.

IC Role / Device Role / Timing Role: Primary-side high-side switch in non-isolated buck regulator; driven by integrated controller with adaptive gate timing.

Use Value: 88–117 nC Q_g enables clean 1 MHz switching with <15 ns propagation delay mismatch across phases.

Industrial Motor Drive Inverters

Automotive DC/DC Converters

Use Scenario: 24 V battery-powered servo drives requiring 40 A continuous output with regenerative braking.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling bidirectional current; body diode conducts reverse energy during braking.

Use Value: 136 nC Q_rr and soft recovery reduce snubber losses and EMI filter size by 40 % compared to standard MOSFETs.

Use Scenario: 48 V–12 V bi-directional DC/DC in mild-hybrid vehicles (e.g., 48 V starter-generator systems).

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of dual-active-bridge topology; operates with zero-voltage switching.

Use Value: 0.7 K/W R_thJC sustains 100 A continuous current at T_C = 100 °C, meeting ASIL-B thermal derating requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB035N08N3 G	Same die, PG-TO263-3 package; R_DS(on) max = 3.5 mΩ but lower R_thJC = 0.55 K/W	Better thermal performance in surface-mount designs with limited heatsink area	Select when PCB space permits SMD layout and thermal interface resistance is <0.3 K/W
IPI037N08N3 G	Same die, PG-TO262-3 package; identical R_DS(on), Q_g, and avalanche rating	Through-hole variant with improved mechanical stability vs. vibration in industrial enclosures	Prefer for high-reliability environments where TO220 lead fatigue is a concern

Compared with IPB035N08N3 G and IPI037N08N3 G, IPP037N08N3GXKSA1 offers optimal cost-performance balance for through-hole VRM designs where standard TO220 heatsinking is available and board-level reflow is not required.

Availability

IPP037N08N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for IPP037N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in computing, telecom, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum continuous drain current for IPP037N08N3GXKSA1 at 100 °C case temperature?

The maximum continuous drain current is 100 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking achieving ≤0.7 K/W thermal resistance from junction to case and ambient airflow per JEDEC standards.

Is IPP037N08N3GXKSA1 suitable for synchronous rectification in LLC resonant converters?

Yes - its 136 nC Q_rr, 73 ns t_rr, and soft-recovery body diode enable reliable synchronous rectification in LLC secondaries up to 300 kHz, reducing conduction loss by 40 % versus Schottky diodes while maintaining low EMI.

Does IPP037N08N3GXKSA1 require a negative gate voltage for safe turn-off?

No - it is a normal-level N-channel MOSFET with V_GS(th) of 2.0–3.5 V and fully enhanced at V_GS = 10 V. Gate drive can be referenced to source; no negative bias is needed for robust turn-off in standard buck or half-bridge configurations.

How does the 0.7 K/W R_thJC value impact thermal design in a 214 W power stage?

With R_thJC = 0.7 K/W and P_tot = 214 W, the junction-to-case temperature rise is 149.8 K. To maintain T_j ≤ 175 °C, the case must be held at ≤25.2 °C - achievable using a 150 cm² aluminum heatsink with forced air at 2 m/s in typical VRM layouts.

IPP037N08N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.75mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 155µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8110 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP037N08N3GXKSA1 FAQ

1.How can I place an order for IPP037N08N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP037N08N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP037N08N3GXKSA1 reliable?

The price and inventory of IPP037N08N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP037N08N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP037N08N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP037N08N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP037N08N3GXKSA1?

IPP037N08N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP037N08N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP037N08N3GXKSA1?

For technical support, including IPP037N08N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP037N08N3GXKSA1 requirements.

6.How does Aetrix verify that IPP037N08N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP037N08N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP037N08N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP037N08N3GXKSA1?

All IPP037N08N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP037N08N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP037N08N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP037N08N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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