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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP039N10N5AKSA1

Name: IPP039N10N5AKSA1
Brand: Infineon Technologies
SKU: IPP039N10N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP039N10N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP039N10N5AKSA1.pdf

Description:: MOSFET N-CH 100V 100A TO220-3

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Product details

Overview

IPP039N10N5AKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in TO-220-3 package, rated for 100 V V_DS, 3.9 mΩ R_DS(on) max at V_GS = 10 V, and 100 A continuous drain current. It features low gate charge (Q_G = 76 nC), 100% avalanche tested operation, and is optimized for high-frequency switching in synchronous rectification and DC-DC converters.

For engineers reviewing the IPP039N10N5AKSA1 datasheet, IPP039N10N5AKSA1 pinout, IPP039N10N5AKSA1 application, or IPP039N10N5AKSA1 equivalent, key selection criteria include its 3.9 mΩ on-resistance, 98 nC output charge, 100 A thermal-current capability at T_C = 25 °C, and JEDEC-qualified reliability for industrial power stages.

Technical Context

This OptiMOS™5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FOM), enabling high-efficiency operation above 100 kHz. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 5 V/10 V logic-level drive without level-shifting.

The integrated body diode exhibits fast reverse recovery (t_rr = 54–108 ns, Q_rr = 87–174 nC) and low forward voltage (V_SD = 0.9–1.2 V at I_F = 50 A), making it suitable for hard-switched and synchronous rectifier topologies where diode conduction loss and switching noise must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switching in 48 V input DC-DC and motor drive half-bridges
R_DS(on), max	3.9 mΩ at V_GS = 10 V - Enables ≤390 mW conduction loss at 100 A, critical for high-current power stages
I_D, cont	100 A at T_C = 25 °C - Supports high-power buck converters and BLDC inverter legs with minimal heatsinking
Q_G(0–10 V)	76 nC - Low gate drive energy reduces driver IC stress and enables >500 kHz PWM operation
E_AS	196 mJ - Robust single-pulse avalanche capability for inductive load switching without snubbers
R_thJC	0.5–0.8 K/W - Enables direct mounting to heatsink for thermal management in compact 1–3 kW designs
V_GS(th)	2.2–3.8 V - Ensures reliable turn-on with standard microcontroller GPIO or gate drivers operating at 3.3 V/5 V

Pinout & Package

Package: PG-TO220-3 (TO-220-3), with exposed drain tab for thermal and electrical connection. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires <2.1 Ω gate resistance for optimal switching
Pin 2 (Drain / Tab)	High-side power terminal	Electrically and thermally connected to heatsink; carries full load current and must be isolated from other potentials
Pin 3 (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; ties to low-side switch source or ground plane

Key Features

Feature	Design Value
OptiMOS™5 trench technology	Delivers 3.9 mΩ R_DS(on) with 76 nC Q_G, achieving industry-leading FOM for 100 V class
100% avalanche tested	Guarantees robustness under inductive switching stress without derating or external protection
Pb-free, RoHS-compliant plating	Meets global environmental compliance requirements and supports lead-free reflow soldering up to 260 °C
JEDEC-qualified reliability	Validated per J-STD-020 and JESD22 for automotive and industrial temperature cycling and humidity exposure
Low Q_oss (98 nC)	Reduces turn-off losses and EMI in hard-switched topologies by minimizing capacitive discharge energy

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 300 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved multiphase topology.

Use Value: 3.9 mΩ R_DS(on) minimizes conduction loss; fast body diode (t_rr = 54 ns) reduces shoot-through risk during dead-time transitions.

Use Scenario: 48 V-to-12 V isolated DC-DC converter in factory automation PLC power supplies.

IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward or LLC resonant converter.

Use Value: 100 V rating accommodates reflected voltage spikes; 196 mJ E_AS withstands transient overvoltage without failure.

BLDC Motor Inverter

Telecom Rectifier Module

Use Scenario: 3 kW brushless DC motor drive for HVAC compressors with field-oriented control.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in 6-step commutation with PWM carrier >20 kHz.

Use Value: 100 A continuous rating supports peak torque currents; low Q_G enables efficient gate drive with integrated half-bridge drivers.

Use Scenario: 48 V telecom rectifier module converting AC to regulated -48 V DC for base station equipment.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped or full-wave configuration.

Use Value: Low V_SD (0.9 V) and fast t_rr reduce conduction and switching losses, improving efficiency beyond 96% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N10F7	R_DS(on) = 4.0 mΩ, Q_G = 82 nC, TO-220FP package (shorter leads, lower inductance)	Higher gate charge increases driver loss; FP variant better suited for surface-mount-compatible through-hole layouts	Prefer when board space is constrained and lower parasitic inductance is prioritized over absolute R_DS(on) minimum
IXFH100N10L2	R_DS(on) = 4.2 mΩ, Q_G = 65 nC, TO-247 package (higher thermal mass, larger footprint)	Lower Q_G improves high-frequency efficiency but higher R_DS(on) raises conduction loss at >80 A	Choose when thermal margin is critical and switching frequency exceeds 1 MHz, accepting slight conduction penalty

Compared with STL110N10F7 and IXFH100N10L2, IPP039N10N5AKSA1 offers the lowest R_DS(on) × Q_G product in TO-220-3, delivering superior efficiency in medium-frequency (100–500 kHz), high-current (>75 A) applications where thermal interface resistance dominates system cooling design.

Availability

IPP039N10N5AKSA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and BLDC motor inverters requiring stable component supply and long-term production continuity.

Supply support for IPP039N10N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™5 family-designed specifically for high-efficiency, high-current power conversion in datacenter, industrial, and renewable energy systems where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum junction temperature for continuous operation?

The IPP039N10N5AKSA1 has a specified maximum junction temperature (T_j) of 175 °C, validated per JEDEC JESD22-A103. Operation at this limit requires thermal design ensuring R_thJC ≤ 0.5 K/W and case temperature ≤ 100 °C under full 100 A load, typically achieved using forced-air-cooled heatsinks or copper-clad PCBs with ≥6 cm² drain copper area.

Is the device suitable for linear mode (analog) operation?

No-this MOSFET is not characterized or qualified for sustained linear (ohmic) operation. Its Safe Operating Area (SOA) diagram shows limited DC capability (≤10 A at 100 V), and thermal runaway risk increases rapidly outside pulsed conditions. It is intended exclusively for switched-mode applications with defined duty cycle and pulse width limits per Figure 3 in the datasheet.

Does the body diode support synchronous rectification without external control?

Yes-the integrated body diode is optimized for synchronous rectification, with typical V_SD = 0.9 V at 50 A and t_rr = 54 ns at T_j = 25 °C. However, for optimal efficiency, external gate control is required to actively turn on the channel during diode conduction periods; uncontrolled body-diode conduction alone incurs higher loss than driven synchronous operation.

What is the recommended gate resistor value for 300 kHz switching?

A gate resistor of 1.6 Ω is validated in the datasheet for 50 A switching at 50 V V_DD, yielding td(on) = 17 ns and tr = 10 ns. For 300 kHz operation, this value balances switching speed and gate-drive overshoot; values below 1.2 Ω increase ringing risk, while values above 2.2 Ω raise switching losses by >15% based on Q_G × f_SW calculations.

IPP039N10N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 125µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP039N10N5AKSA1 FAQ

1.How can I place an order for IPP039N10N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP039N10N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP039N10N5AKSA1 reliable?

The price and inventory of IPP039N10N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP039N10N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP039N10N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP039N10N5AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP039N10N5AKSA1?

IPP039N10N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP039N10N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP039N10N5AKSA1?

For technical support, including IPP039N10N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP039N10N5AKSA1 requirements.

6.How does Aetrix verify that IPP039N10N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP039N10N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP039N10N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP039N10N5AKSA1?

All IPP039N10N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP039N10N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP039N10N5AKSA1 part is unused and in its original packaging.

Return procedure for IPP039N10N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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