Infineon Technologies IPP055N08NF2SAKMA1

Overview

IPP055N08NF2SAKMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC conversion and motor drive applications. It delivers 80 V V_DS, 5.5 mΩ R_DS(on) max at V_GS = 10 V, 99 A continuous drain current at T_C = 25 °C, and 100% avalanche tested performance - enabling robust operation in industrial power supplies and BLDC motor inverters.

For engineers reviewing the IPP055N08NF2SAKMA1 datasheet, IPP055N08NF2SAKMA1 pinout, IPP055N08NF2SAKMA1 application, or IPP055N08NF2SAKMA1 equivalent, key selection criteria include its low Q_g (36 nC), low Q_oss (43 nC), strong body diode with 30 ns t_rr, and thermal resistance R_thJC of 1.4 °C/W - critical for high-frequency switching and thermally constrained designs.

Technical Context

This MOSFET employs Infineon's StrongIRFET™ 2 technology, featuring a trench-gate structure with optimized cell pitch and reduced gate-drain charge (Q_gd = 8 nC) to minimize switching losses. Its 80 V rating and 5.5 mΩ on-resistance support efficient operation in 48 V bus systems, including telecom rectifiers and e-bike controllers.

The device integrates a fast, soft-recovery body diode (t_rr = 30 ns, Q_rr = 154 nC) and supports gate drive with standard 10 V logic-level signals. Thermal design is enabled by direct tab-to-heatsink mounting (Drain-connected tab) and validated JEDEC qualification per JESD47.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab). Drain connected to metal tab for low-inductance, high-current thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP90NF08 and IRFP4668, IPP055N08NF2SAKMA1 offers optimal balance: lowest Q_g/R_DS(on) ratio among 80 V TO-220 devices, enabling high-frequency operation without sacrificing thermal headroom or requiring oversized gate drivers.

Availability

IPP055N08NF2SAKMA1 is available at Aetrix Electronics and suitable for industrial power supplies, BLDC motor inverters, and 48 V DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPP055N08NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's StrongIRFET™ 2 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and transportation power systems - emphasizing low Q_g, rugged avalanche capability, and thermal robustness.

FAQ

Is IPP055N08NF2SAKMA1 suitable for gate driving with 5 V logic?

No - this is a normal-level MOSFET requiring minimum 6 V gate drive for specified R_DS(on). At V_GS = 5 V, R_DS(on) rises to ~7.9 mΩ (max), increasing conduction loss significantly. Use 10 V gate drive for full 5.5 mΩ performance and reliable turn-on margin across temperature.

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is 175 °C, but continuous operation above 125 °C de-rates ID to 58 A (per Table 2). For sustained 99 A current, case temperature must remain ≤25 °C - achieved via adequate heatsinking and forced airflow or large copper area (≥6 cm²) per JEDEC test condition.

Does the drain tab require electrical isolation from the heatsink?

Yes - the metal tab is internally connected to the Drain (Pin 2). If the heatsink is grounded or at a different potential, mandatory electrical isolation (e.g., mica washer + thermal grease or isolating pad) is required to prevent short circuits and ensure safe operation.

How does the body diode performance compare to discrete Schottky solutions?

The integrated body diode has V_SD = 0.94 V (typ) at 60 A and t_rr = 30 ns - softer and slower than Schottky diodes but more rugged and cost-effective for synchronous rectification where reverse recovery noise must be managed. Not recommended for ultra-high-frequency (>1 MHz) or ultra-low forward drop applications.